®
SMTHBT200
TRISIL
TM
FOR LINE CARD PROTECTION
FEATURES
BIDIRECTIONAL CROWBAR PROTECTION
REPETITIVE PEAK PULSE CURRENT:
I
PP
= 100 A (10/1000
µs)
HOLDING CURRENT: I
H
= 150 mA
BREAKDOWN VOLTAGE : 200V min
BREAKOVER VOLTAGE : 265V max
SMC
DESCRIPTION
This protection device has been especially
designed to protect subscriber line cards using
SLICS without integrated ring generators.
The SMTHBT200 device protects ring
generator
relays
against
transient
SCHEMATIC DIAGRAM
INACCORDANCE WITHTHEFOLLOWINGSTANDARDS :
10/700
µs
5/310
µs
- VDE 0433:
10/700
µs
5/310
µs
- VDE 0878:
1.2/50
µs
1/20
µs
- FCC Part 68:
2/10
µs
BELLCORE TR-NWT-001089:
2/10
µ
s
- BELLCORE TR-NWT-000974: 10/1000
µ
s
10/1000
µ
s
- CCITT K20:
4 kV
100 A
4 kV
100 A
4 kV
100 A
2.5 kV
500 A
1 kV
100 A
August 1999 - Ed : 3A
1/6
SMTHBT200
THERMAL RESISTANCES
Symbol
R
th(j-I)
R
th(j-a)
Junction to leads
Junction to ambient on printed circuit
(with standard footprint dimensions)
Parameter
Value
10
75
Unit
°C/W
°C/W
ABSOLUTE MAXIMUM RATINGS
(T
amb
=
25°C, unless otherwise specified)
Symbol
I
pp
Parameter
Peak pulse current:
10/1000
µ
s (open circuit voltage waveform
10/1000
µ
s)
8/20
µ
s
(open circuit voltage waveform 4kV 1.2/50
µ
s)
Non repetitive surge peak on-state current
Critical rate of rise of off-state voltage
Maximum lead temperature for soldering during 10s
Storage temperature range
Maximum junction temperature
tp = 20ms
V
RM
Value
100
250
55
5
260
- 55 to + 150
150
Unit
A
A
A
KV/µs
°C
°C
°C
I
TSM
dV/dt
T
L
T
stg
Tj
Note 1:
Pulse waveform
10 / 1000
µ
s
8 / 20
µs
5 / 310
µs
1 / 20
µs
2 / 10
µ
s
tr = 10
µ
s
tr = 8
µs
tr = 5
µs
tr = 1
µs
tr = 2
µ
s
tp = 1000
µ
s
tp = 20
µs
tp = 310
µs
tp = 20
µs
tp = 10
µ
s
% IPP
100
50
0
tr
tp
2/6
SMTHBT200
ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C)
Symbol
V
RM
I
RM
V
R
V
BR
V
BO
I
H
I
BO
I
PP
C
Parameter
Stand-off voltage
Leakage current at stand-off voltage
Continuous Reverse voltage
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Peak pulse current
Capacitance
STATIC PARAMETERS
Type
I
RM
@ V
RM
max.
µ
A
SMTHBT200
10
V
180
I
R
@ V
R
max.
note 1
µ
A
50
V
200
V
BO
max.
max.
V
265
mA
150
@ I
BO
min.
note 2
mA
800
I
H
min.
note 3
mA
150
C
max.
note 4
pF
150
Note 2 :
IR measured at VR guarantees VBR>VR
Note 2 :
Measured at 50Hz, see test circuit 1.
Note 3 :
See functional holding current test circuit 2.
Note 4 :
VR=1V bias, VRMS=1V, F=1MHz.
3/6
SMTHBT200
TEST CIRCUIT 1 FOR I
BO
and V
BO
parameters:
tp = 20ms
Auto
Transformer
220V/2A
static
relay.
K
R1
140
R2
240
220V
Vout
IBO
measure
Transformer
220V/800V
5A
D.U.T
V BO
measure
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
V
OUT
Selection
- Device with V
BO
<
200 Volt
- V
OUT
= 250 V
RMS
, R
1
= 140
Ω.
- Device with V
BO
≥
200 Volt
- V
OUT
= 480 V
RMS
, R
2
= 240
Ω
.
TEST CIRCUIT 2 for I
H
parameter.
R
D.U.T.
V
BAT
= - 48 V
Surge generator
- V
P
This is a GO-NO GO test which allows to confirm the holding current (I
H
) level in a functional test circuit.
TEST PROCEDURE :
- Adjust the current level at the I
H
value by short circuiting the D.U.T.
- Fire the D.U.T. with a surge current : I
pp
= 10A, 10/1000
µ
s.
- The D.U.T. will come back to the off-state within 50 ms max.
4/6
SMTHBT200
Fig 1 :
Non repetitive surge peak on-state current
versus overload duration (T
j
initial = 25
°C).
Fig 2 :
On-state voltage versus on-state current
(typical values).
I
TSM
(A)
70
60
50
40
30
20
10
0
1E-2
1E-1
t(s)
1E+0
1E+1
1E+2
1E+3
F=50Hz
I
T
(A)
50
Tj=25°C
10
V
T
(V)
1
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
Fig 3 :
Relative variation of holding current versus
junction temperature.
Fig 4 :
Variation of thermal impedance junction to
ambient versus pulse duration.
IH[Tj] / IH[Tj=25°C]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
100
Zth(j-a)(°CW)
10
T
j
(°C)
-20
0
20
40
60
80
100
120
1
1E-3
1E-2
1E-1
t
p
(s)
1E+0
1E+1
1E+2 5E+2
Fig 5 :
Relative variation of junction capacitance
versus reverse voltage applied (typical values).
Note
: For VBR upper than 62 V, the curve can be extrapolated
(dotted line)
C[VR]/C[VR=1V]
1.0
F=1MHz
0.5
0.2
V
R
(V)
0.1
1
10
100
300
5/6
京公网安备 11010802033920号
EEWORLD
