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TN0200K_07

Description
MOSFET N-CH 20V 730MA SOT23-3
Categorysemiconductor    Discrete semiconductor   
File Size90KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

TN0200K_07 Overview

MOSFET N-CH 20V 730MA SOT23-3

New Product
TN0200K
Vishay Siliconix
N-Channel 20-V (D-S) MOSFETs
PRODUCT SUMMARY
V
DS
(V)
20
0.5 at V
GS
= 2.5 V
0.65
r
DS(on)
(Ω)
0.4 at V
GS
= 4.5 V
I
D
(A)
0.73
FEATURES
• TrenchFET
®
Power MOSFET
• ESD Protected: 4000 V
RoHS
COMPLIANT
APPLICATIONS
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers
• Battery Operated Systems, DC/DC Converters
• Solid-State Relays
• Load/Power Switching-Cell Phones, Pagers
TO-236
(SOT-23)
Marking Code:
K2ywl
3
S
2
D
K2 = Part Number Code for TN0200K
y = Year Code
w = Week Code
l = Lot Traceability
Top View
G
D
G
1
100
Ω
Ordering Information:
TN0200K-T1-E3 (Lead (Pb)-free)
S
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
b
Power Dissipation
b
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J,
T
stg
Limit
20
±8
0.73
0.58
4
0.3
0.35
0.22
- 55 to 150
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t
10 sec.
Document Number: 72678
S-71198–Rev. B, 18-Jun-07
www.vishay.com
1
Symbol
R
thJA
Limit
357
Unit
°C/W
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