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TPSMA6.8AHE3

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size86KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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TPSMA6.8AHE3 Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC

TPSMA6.8 thru TPSMA43A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction
passivation
optimized
design
passivated anisotropic rectifier technology
• T
J
= 185 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• 400 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
DO-214AC (SMA)
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
WM
V
BR
P
PPM
P
D
I
FSM
T
J
max.
Polarity
Package
5.5 V to 36.8 V
6.8 V to 43 V
400 W
1.0 W
40 A
185 °C
Uni-directional
DO-214AC (SMA)
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
per
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive and telecommunication.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 μs waveform
(1)(2)
(fig. 3)
Peak power pulse current with a 10/1000 μs waveform
(1)
(fig. 1)
Power dissipation at T
A
= 25 °C
(4)
Peak forward surge current 8.3 ms single half sine-wave
(3)
Maximum instantaneous forward voltage at 25 A
(3)
Operating junction and storage temperature range
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
VALUE
400
See next table
1.0
40
3.5
- 65 to + 185
UNIT
W
A
W
A
V
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads attached to each terminal
(3)
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum
(4)
Mounted on minimum recommended pad layout
Revision: 17-Dec-12
Document Number: 88405
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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