TOKEN
TREM RF Chip Wire Wound Inductors
Wire Wound
Chip Inductors
Narrow Pad Wire Wound Inductors with
High SRFs for RF Applications
(TREM322522N, TREM453232N)
Preview
Token TREM Series is primarily designed for chip narrow pad, high SRFs, molded type, wire wound inductors
and offers improved performance in the same compact case size. Product conforms to the RoHS directive and
Lead-free. The TREM series chip inductor can be customed designs for tighter tolerances on request.
A Brief Introduction to the Product:
SMT Inductors EM322522N and EM453232N series
are revolutionary, high reliable wire wound
components for communication, equipment,
instruments, video & audio have been developed in
response to the trend toward higher density mounting
of inductor parts in electric circuits.
Operating Temperature
- Range: -25 ~ +85 °C.
Features
- Metal terminals with excellent connection reliability.
- Accurate dimensions for automatically surface mounted.
- Lead-free materials is used for the plating on the terminals.
- High resistance to heat, humidity, mechanical shocks and presser.
- Good heat durability that withstands lead-free compatible reflow soldering conditions.
Applications
TREM series is suited for communication, video & audio, equipment, instrument which have been
developed in response to the trend toward higher density mounting of parts in electric circuits.
Version 2010
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01 of 06
TOKEN
A
TREM RF Chip Wire Wound Inductors
TREM322522N, TREM453232N Series - Configurations & Dimensions
B
D
C
E
E
F
Type
TREM322522N(1210)
TREM453232N(1812)
A
3.2 ± 0.4
4.5 ± 0.4
B
2.5 ± 0.2
3.2 ± 0.2
C
2.9 ± 0.3
4.2 ± 0.3
D
2.2 ± 0.2
3.2 ± 0.2
E
0.6 ± 0.2
1.0 ± 0.2
F
1.0 ± 0.2
1.2 ± 0.2
TREM322522N, TREM453232N Series - Reel & Packaging
T
2.0±0.5
A B
ΦC
G
Tape
TYPE
8mm
12mm
A
178
178
B
21.0±0.8
21.0±0.8
C
13.0±0.5
13.0±0.5
D
8
10
G
10 max
14 max
ΦC
N
Adhesive Tape
Cave
P
D
N
50 min
50 min
T
14.4 max
14.4 max
02 of 06
http://www.token.com.tw/
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Version 2010
TOKEN
Part Number
TREM322522N - R10*
TREM322522N - R12*
TREM322522N - R15*
TREM322522N - R18*
TCEtM322522N - R22*
TREM322522N - R27*
TREM322522N - R33*
TREM322522N - R39*
TREM322522N - R47*
TREM322522N - R56*
TREM322522N - R68*
TREM322522N - R82*
TREM322522N - 1R0*
TREM322522N - 1R2*
TREM322522N - 1R5*
TREM322522N - 1R8*
TREM322522N - 2R2*
TREM322522N - 2R7*
TREM322522N - 3R3*
TREM322522N - 3R9*
TREM322522N - 4R7*
TREM322522N - 5R6*
TREM322522N - 6R8*
TREM322522N - 8R2*
TREM322522N - 100*
TREM322522N - 120*
TREM322522N - 150*
TREM322522N - 180*
TREM322522N - 220*
TREM322522N - 270*
TREM322522N - 330*
TREM322522N - 390*
TREM322522N - 470*
TREM322522N - 560*
TREM322522N - 680*
TREM322522N - 820*
TREM322522N - 101*
TREM322522N - 121*
TREM322522N - 151*
TREM322522N - 181*
TREM322522N - 221*
Version 2010
TREM RF Chip Wire Wound Inductors
Inductance
(µH)
0.10
0.12
0.15
0.18
0.22
0.27
0.33
0.39
0.47
0.56
0.68
0.82
1.00
1.20
1.50
1.80
2.20
2.70
3.30
3.90
4.70
5.60
6.80
8.20
10.0
12.0
15.0
18.0
22.0
27.0
33.0
39.0
47.0
56.0
68.0
82.0
100
120
150
180
220
Tolerance
(%)
±20,±10
±20,±10
±20,±10
±20,±10
±20,±10
±20,±10
±20,±10
±20,±10
±20,±10
±20,±10
±20,±10
±20,±10
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
±10,±5
Q
(min)
28
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
20
20
20
20
20
Test Freq.
(MHZ)
100
25.2
25.2
25.2
25.2
25.2
25.2
25.2
25.2
25.2
25.2
25.2
7.96
7.96
7.96
7.96
7.96
7.96
7.96
7.96
7.96
7.96
7.96
7.96
2.52
2.52
2.52
2.52
2.52
2.52
2.52
2.52
2.52
2.52
2.52
2.52
0.796
0.796
0.796
0.796
0.796
SRF
(MHz)(min)
700
500
450
400
350
320
300
250
220
180
160
140
120
100
85
80
75
70
60
55
50
45
40
35
30
20
20
20
20
20
17
16
15
13
12
11
10
10
8
7
7
DCR
(Ω)(max)
0.44
0.22
0.25
0.28
0.32
0.36
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.85
0.90
1.00
1.10
1.20
1.30
1.50
1.60
1.80
2.00
2.10
2.50
2.80
3.30
3.70
5.00
5.60
6.40
7.00
8.00
9.00
10.0
10.0
11.0
15.0
17.0
21.0
IDC
(mA)
450
450
450
450
450
450
450
450
450
450
450
450
400
390
370
350
320
290
260
250
220
200
180
170
150
140
130
120
110
80
70
65
60
55
50
45
40
70
65
60
50
03 of 06
TREM322522N (EIA 1210) - Electrical Characteristics
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TOKEN
Part Number
TREM453232N - R10*
TREM453232N - R12*
TREM453232N - R15*
TREM453232N - R18*
TREM453232N - R22*
TREM453232N - R27*
TREM453232N - R33*
TREM453232N - R39*
TREM453232N - R47*
TREM453232N - R56*
TREM453232N - R68*
TREM453232N - R82*
TREM453232N - 1R0*
TREM453232N - 1R2*
TREM453232N - 1R5*
TREM453232N - 1R8*
TREM453232N - 2R2*
TREM453232N - 2R7*
TREM453232N - 3R3*
TREM453232N - 3R9*
TREM453232N - 4R7*
TREM453232N - 5R6*
TREM453232N - 6R8*
TREM453232N - 8R2*
TREM453232N - 100*
TREM453232N - 120*
TREM453232N - 150*
TREM453232N - 180*
TREM453232N - 220*
TREM453232N - 270*
TREM453232N - 330*
TREM453232N - 390*
TREM453232N - 470*
TREM453232N - 560*
TREM453232N - 680*
TREM453232N - 820*
TREM453232N - 101*
TREM453232N - 121*
TREM453232N - 151*
TREM RF Chip Wire Wound Inductors
Inductance
(µH)
0.10
0.12
0.15
0.18
0.22
0.27
0.33
0.39
0.47
0.56
0.68
0.82
1.00
1.20
1.50
1.80
2.20
2.70
3.30
3.90
4.70
5.60
6.80
8.20
10.0
12.0
15.0
18.0
22.0
27.0
33.0
39.0
47.0
56.0
68.0
82.0
100
120
150
Tolerance
(%)
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±10,±20
±5,±10
±5,±10
±5,±10
±5,±10
±5,±10
±5,±10
±5,±10
±5,±10
±5,±10
±5,±10
±5,±10
±5,±10
±5,±10
±5,±10
±5,±10
±5,±10
Q
(min)
25
30
30
30
30
30
30
30
30
30
30
30
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
30
30
30
Test Freq.
(MHZ)
25.2
25.2
25.2
25.2
25.2
25.2
25.2
25.2
25.2
25.2
25.2
25.2
7.96
7.96
7.96
7.96
7.96
7.96
7.96
7.96
7.96
7.96
7.96
7.96
2.52
2.52
2.52
2.52
2.52
2.52
2.52
2.52
2.52
2.52
2.52
2.52
0.796
0.796
0.796
SRF
(MHz)(min)
300
280
250
220
200
180
165
150
145
140
135
130
100
80
70
60
55
50
45
40
35
33
27
25
20
18
17
15
13
12
11
10
10
9
9
8
8
6
5
DCR
(Ω)(max)
0.18
0.20
0.22
0.24
0.25
0.26
0.28
0.30
0.32
0.36
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.90
1.00
1.10
1.20
1.40
1.60
2.00
2.50
2.80
3.20
3.60
4.00
4.50
5.00
5.50
6.00
7.00
8.00
8.00
9.00
IDC
(mA)
800
770
730
700
665
635
605
575
545
520
500
475
450
430
410
390
380
370
355
330
315
300
285
270
250
225
200
190
180
170
160
150
140
135
130
120
110
110
105
Electrical Characteristics - TREM453232N (EIA 1812)
Continued on the following page.
04 of 06
http://www.token.com.tw/
rfq token.com.tw
Version 2010
TOKEN
Part Number
TREM453232N - 181*
TREM453232N - 221*
TREM453232N - 271*
TREM453232N - 331*
TREM453232N - 391*
TREM453232N - 471*
TREM453232N - 561*
TREM453232N - 681*
TREM453232N - 821*
TREM453232N - 102*
TREM RF Chip Wire Wound Inductors
Inductance
(µH)
180
220
270
330
390
470
560
680
820
1000
Toler-
ance(%)
±5,±10
±5,±10
±5,±10
±5,±10
±5,±10
±5,±10
±5,±10
±5,±10
±5,±10
±5,±10
Q
(min)
30
30
30
30
30
30
20
20
20
10
Test Freq.
(MHZ)
0.796
0.796
0.796
0.796
0.796
0.796
0.796
0.796
0.796
0.252
SRF
(MHz)(min)
5
4
4
3.5
3
3
3
3
2.5
2.5
DCR
(Ω)(max)
9.50
10.0
12.0
14.0
18.0
26.0
30.0
30.0
35.0
40.0
IDC
(mA)
102
100
92
85
80
62
50
50
30
30
Continued from the preceding page.
Note: Test equipment L, Q: HP4285A +16034E, or equivalent
SRF: HP8753C NETWORK ANALYZER, or equivalent.
DC resistance: AX-111A DIGITAL MILLIOHM METER, or equivalent.
TREM322522N, TREM453232N - Mechanical Performance Test
REQUIREMENTS
Terminal Strength
Vibration
Dropping
CHARACTERISTICS
No evidence of damage
Δ L/L shall be within ±3%.
No evidence of damage
Δ L/L shall be within ±3%.
No evidence of damage
TEST METHOD(DIS C 5321)
Terminals shall withstand a pull of 0.5Kgf
in a horizoninal direction
2 hours in each direction of X,Y,Z on p-Board
at a frequency range of 10-55-10HZ with
1.5mm amplitude
Dropping 1m over the ground of conctete or
cement
TREM322522N, TREM453232N - Electrical Performance Test
REQUIREMENTS
Resistance to Soldering Heat
Solderability
Dielectric with standing volt-
age
Insulation Resistance
CHARACTERISTICS
No evidence of damage
Δ L/L shall be within ±3%
More than 90% surface to
be covered with new soldering
No veridence of breakdown
resistor 1000 Mohm and over
No veidence of breakdown,
resistor 1000 Mohm and over
TEST METHOD(JIS C 5321)
Immerse in the solder (H63A) of 260±5°C for
10±1sec, leave for 2hrs at normal TEMP
AV100V 60 SEC.T
DC500V 30 SEC.
DC 500V 30 SEC.
Version 2010
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rfq token.com.tw
05 of 06
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