BS108
DMOS Transistors (N-Channel)
TO-92
.181 (4.6)
min. .492 (12.5) .181 (4.6)
.142 (3.6)
FEATURES
♦
♦
♦
♦
♦
♦
♦
♦
♦
♦
High breakdown voltage
High input impedance
Low gate threshold voltage
Low drain-source ON resistance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
Specially suited for telephone subsets
max.
∅
.022 (0.55)
.098 (2.5)
D
G
S
MECHANICAL DATA
Case:
TO-92 Plastic Package
Weight:
approx. 0.18 g
On special request, this transistor is also manu-
factured in the pin configuration TO-18.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed)
Drain Current (continuous)
Power Dissipation at T
amb
= 25 °C
Junction Temperature
Storage Temperature Range
1)
Value
240
240
±20
230
0.83
1)
150
–65 to +150
Unit
V
V
V
mA
W
°C
°C
V
DSS
V
DGS
V
GS
I
D
P
tot
T
j
T
S
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
Inverse Diode
Symbol
Max. Forward Current (continuous)
at T
amb
= 25 °C
Forward Voltage Drop (typ.)
at V
GS
= 0, I
F
= 0.75 A, T
j
= 25 °C
I
F
V
F
Value
0.75
0.85
Unit
A
V
4/98
BS108
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Drain-Source Breakdown Voltage
at I
D
= 100
µA,
V
GS
= 0
Gate-Body Leakage Current
at V
GS
= 15 V, V
DS
= 0
Drain Cutoff Current
at V
DS
= 130 V, V
GS
= 0
at V
DS
= 70 V, V
GS
= 0.2 V
Gate-Source Threshold Voltage
at V
GS
= V
DS
, I
D
= 1 mA
Drain-Source ON Resistance
at V
GS
= 2.8 V, I
D
= 100 mA
Thermal Resistance Junction to Ambient Air
Capacitance
at V
DS
= 20 V, V
GS
= 0, f = 1 MHz
Input Capacitance
Output Capacitance
Feedback Capacitance
Switching Times
at V
GS
= 10 V, V
DS
= 10 V, R
D
= 100
Ω
Turn-On Time
Turn-Off Time
1)
Min.
240
–
Typ.
250
–
Max.
–
10
Unit
V
nA
V
(BR)DSS
I
GSS
I
DSS
I
DSX
V
GS(th)
R
DS(ON)
R
thJA
–
–
0.8
–
–
–
–
1.5
5.5
–
1
25
2.5
8
150
1)
µA
µA
V
Ω
K/W
C
iSS
C
OSS
C
rSS
–
–
–
80
20
5
–
–
–
pF
pF
pF
t
on
t
off
–
–
5
50
–
–
ns
ns
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
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