TSDF54040
Vishay Telefunken
Dual - MOSMIC
®
– two AGC Amplifiers for TV–Tuner
Prestage with 5 V Supply Voltage
MOSMIC
-
MOS Monolithic Integrated Circuit
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
Typical Application
Amplifier 1
C block
AGC
RF in
C block
G2
G1
S
D
RF out
C block
94 9296
Amplifier 2
RFC
V
DD
AGC
RF in
C block
C block
G2
G1
S
D
RF out
C block
94 9296
RFC
V
DD
Features
D
D
D
D
Two AGC amplifiers in a single package
Integrated gate protection diodes
Low noise figure
High gain, high forward transadmittance
(40 mS typ.)
6
5
4
D
D
D
D
Biasing network on chip
Improved cross modulation at gain reduction
High AGC-range
SMD package
TY
CW
WD4
1
2
3
16022
16 015–2
TSDF54040 Marking: WD4
Plastic case (SOT 363)
1 = Gate 1 (amplifier 1), 2 = Gate 2, 3 = Drain (amplifier 1),
4 = Drain (amplifier 2), 5 = Source, 6 = Gate1 (amplifier 2)
T = Telefunken
Y = Year, is variable for digit from 0 to 9 (e.g. 9 = 1999, 0 = 2000)
CW = Calendar Week, is variable for number from 01 to 52
Number of Calendar Week is always indicating place of pin 1
Document Number 85071
Rev. 3, 16-Mar-99
www.vishay.de
•
FaxBack +1-408-970-5600
1 (5)
TSDF54040
Vishay Telefunken
All of following data and characteristics are valid for operating either
amplifier 1 (pin 1, 3, 2, 5) or amplifier 2 (pin 6, 4, 2, 5)
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Symbol
Value
V
DS
8
I
D
30
±I
G1/G2SM
10
±V
G1/G2SM
6
P
tot
200
T
Ch
150
T
stg
–55 to +150
Unit
V
mA
mA
V
mW
°
C
°
C
T
amb
≤
60
°
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thChA
Value
450
Unit
K/W
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain current
Self-biased
operating current
Gate 2 - source
cut-off voltage
Test Conditions
±I
G1S
= 10 mA, V
G2S
= V
DS
= 0
±I
G2S
= 10 mA, V
G1S
= V
DS
= 0
+V
G1S
= 5 V, V
G2S
= V
DS
= 0
–V
G1S
= 5 V, V
G2S
= V
DS
= 0
±V
G2S
= 5 V, V
G1S
= V
DS
= 0
V
DS
= 5 V, V
G1S
= 0, V
G2S
= 4 V
V
DS
= 5 V, V
G1S
= nc, V
G2S
= 4 V
V
DS
= 5 V, V
G1S
= nc, I
D
= 20
m
A
Symbol
Min
±V
(BR)G1SS
7
±V
(BR)G2SS
+I
G1SS
–I
G1SS
±I
G2SS
I
DSS
I
DSP
V
G2S(OFF)
50
9
7
Typ
Max Unit
10
V
10
50
100
20
500
18
V
m
A
m
A
nA
m
A
mA
V
13
1.0
www.vishay.de
•
FaxBack +1-408-970-5600
2 (5)
Document Number 85071
Rev. 3, 16-Mar-99
TSDF54040
Vishay Telefunken
Electrical AC Characteristics
V
DS
= 5 V, V
G2S
= 4 V, f = 1 MHz , T
amb
= 25
_
C, unless otherwise specified
Parameter
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power g
gain
AGC range
Noise figure
g
Cross modulation
Test Conditions
Symbol
y
21s
C
issg1
C
rss
C
oss
G
ps
G
ps
D
G
ps
F
F
X
mod
X
mod
Min
35
Typ
40
2.7
30
1.5
28
23
45
1
1.3
Max
50
3.5
Unit
mS
pF
fF
pF
dB
dB
dB
dB
dB
dB
m
V
dB
m
V
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
S
= 3,3 mS, G
L
= 1 mS, f = 800 MHz
V
DS
= 5 V, V
G2S
= 1 to 4 V, f = 800 MHz
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
S
= 3,3 mS, G
L
= 1 mS, f = 800 MHz
Input level for k = 1 % @ 0 dB AGC
f
w
= 50 MHz, f
unw
= 60 MHz
Input level for k = 1 % @ 40 dB AGC
f
w
= 50 MHz, f
unw
= 60 MHz
20
85
100
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with V
G1S
< 0.7 V is feasible.
Using open collector switching transistor (inside of PLL), insert 10 k
W
collector resistor.
Document Number 85071
Rev. 3, 16-Mar-99
www.vishay.de
•
FaxBack +1-408-970-5600
3 (5)
TSDF54040
Vishay Telefunken
Dimensions of TSDF54040 in mm
14280
www.vishay.de
•
FaxBack +1-408-970-5600
4 (5)
Document Number 85071
Rev. 3, 16-Mar-99
TSDF54040
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85071
Rev. 3, 16-Mar-99
www.vishay.de
•
FaxBack +1-408-970-5600
5 (5)
京公网安备 11010802033920号
EEWORLD
