7164S25J datasheet, PDF - EEWORLD Datasheet

7164S25J: DescriptionStandard SRAM, 8KX8, 25ns, CMOS, PQCC32, PLASTIC, LCC-32; Categorystorage storage; File Size680KB，9 Pages; ManufacturerIDT (Integrated Device Technology)

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7164S25J Overview

Standard SRAM, 8KX8, 25ns, CMOS, PQCC32, PLASTIC, LCC-32

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1156989401
package instruction	QCCJ, LDCC32,.5X.6
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum access time	25 ns
I/O type	COMMON
JESD-30 code	R-PQCC-J32
JESD-609 code	e0
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	1
Number of functions	1
Number of terminals	32
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.015 A
Minimum standby current	4.5 V
Maximum slew rate	0.17 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn85Pb15)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	30

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