MSTF 4
MEGOHM CHIP RESISTORS
MSTF 4 SERIES
0.040"
SIZE
RESISTANCE
RESISTANCE RANGE
0.040" x 0.040" x .010" ±0.003"
1MΩ
15MΩ
1M
Ω
TO 15M
Ω
CHIP
RESISTORS
MSTF 6 SERIES
0.040"
SIZE
RESISTANCE
RESISTANCE RANGE
0.060" x 0.060" x .010" ±0.003"
2MΩ
35MΩ
2M
Ω
TO 35M
Ω
MSDR 4 SERIES
MSTF 6
SIZE
RESISTANCE
RESISTANCE RANGE
RESISTANCE RATIO
RESISTANCE RATIO
0.040" x 0.040" x .010" ±0.003"
1MΩ
10MΩ
1M
Ω
TO 10M
Ω
STANDARD;
±1% STANDARD; OPTIONAL TO ±0.1%
DAT
COMMON SERIES DATA
SUBSTRATE MATERIAL
SUBSTRATE MATERIAL
PADS
BOND PADS
BACKSIDE SURFACE
TOLERANCES
T.C.R.
NICHROME
ANTALUM
TANTALUM NITRIDE
CURRENT NOISE
DIELECTRIC BREAKDOWN
INSULATION RESISTANCE
INSULATION RESISTANCE
OPERATING VOLT
OPERATING VOLTAGE
RATING
POWER RATING
SHORT TERM OVERLOAD
HIGH TEMP EXPOSURE
THERMAL SHOCK
RESISTANCE
MOISTURE RESISTANCE
STABILITY
STABILITY
OPERATING
OPERATING TEMP RANGE
STRAY
STRAY DISTRIBUTED
CAPACIT
ACITANCE
CAPACITANCE
SILICON
QUARTZ
SILICON, QUARTZ, OR GLASS
GOLD (15,000 Å MIN.), OPTIONAL: ALUMINUM (10,000 Å MIN.)
SUBSTRATE
BARE SUBSTRATE OR GOLD BACK OPTIONAL
0.5%, 1%, 2%, 5%, 10%; TO ±0.1% AVAILABLE**
STANDARD;
±25ppm/°C STANDARD; OPTIONAL TO ±5ppm/°C
STANDARD;
±150ppm/°C STANDARD; OPTIONAL TO ±10ppm/°C
-20dB
400 V MIN.
10
12
Ω
MIN.
100 V MAX.
DERATED LINEARLY
250 mW (70°C DERATED LINEARLY TO 150°C) P =
Ε
2
/
R
0.2
RATED
25°
±0.
5X RATED POWER, 25° C, 5 SEC., ±0.2 5% MAX.
∆
R/R
±0.25%
150°C, 100 HRS., ±0.25% MAX.
∆
R/R
107F, ±0.25%
MIL-STD 202, METHOD 107F, ±0.25% MAX.
∆
R/R
±0.
0.5
MIL-STD 202, METHOD 106, ±0.5% MAX.
∆
R/R
70°C,
Power, ±0.5%
1000 HRS., 70°C, 100% Power, ±0.5% MAX.
∆
R/R
-55
-55°C TO +150°C
0.060"
0.060"
MSDR 4
0.040"
2pF
0.02pF
PART NUMBER DESIGNATION
DESIGNATION
XXXXX
SERIES
X
SUBSTRATE
SUBSTRATE
G = Glass
Q = Quartz
S = Silicon
X
RESISTIVE
FILM
N = Nichrome
T = Tantalum
Nitride
XXXXX
TOTAL
TOTAL
OHMIC VALUE
5-Digit
Number: 1st
4 Digits Are
Significant
With "R" As
Decimal
Point When
Required.
5th Digit
Represents
Number of
Zeros.
X
TOLERANCE **
B
D
F
G
J
K
= 0.1%
= 0.5%
= 1%
= 2%
= 5%
= 10%
X
OPTION
DESIGNATOR
DESIGNATOR
(If Required)
A = ±50ppm/°C
B = ±25ppm/°C
C = ±10ppm/°C
D = ±5ppm/°C
E = Aluminum
Bond Pads
GB = Gold Backside
F = ±100ppm/°C
G = Gold Bond
Pads
(Always used
when no
other option
is required)
RC = ±0.1% Ratio*
RD = ±0.5% Ratio*
* MSDR-4 ONLY
ONLY
0.040"
MSTF4
MSTF6
MSDR4
R1
R1 = R2
R1 + R2 = Rt
R2
Note:
If R1 = R2, then custom
design required.
EXAMPLES: MSTF4SN-10003F-G = 0.040" x 0.040", Silicon Substrate,
Resistor, 1MΩ
Tol.,
Nichrome Resistor, 1M
Ω
, ±1% Tol., Gold Bond Pads.
MSTF6ST-10004F-FGB = 0.060" x 0.060", Silicon Substrate,
MSTF6ST-10004F-FGB
Resistor, 10MΩ
Tol.,
Tantalum Nitride Resistor, 10M
Ω
, ±1% Tol., ±100ppm/°C
Gold Backside
MINI-SYSTEMS, INC.
THIN FILM DIVISION
DAVID
ATTLEBORO,
20 DAVID ROAD, N. ATTLEBORO, MA 02760
508-695-0203 FAX: 508-695-6076
DCN TF 103-G-0306
MSDR4SN-10004F-RCE = 0.040" x 0.040", Silicon Substrate,
Resistor, 10MΩ
Tol.,
Nichrome Resistor, 10M
Ω
, ±1% Tol., ±0.1% Ratio, Aluminum
Bond Pads.
**Consult Sales department for tolerances <0.5%.
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