TSML1000, TSML1020, TSML1030, TSML1040
www.vishay.com
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
FEATURES
TSML1000
TSML1020
• Package type: surface mount
• Package form: GW, RGW, yoke, axial
• Dimensions (L x W x H in mm): 2.5 x 2 x 2.7
• Peak wavelength:
λ
p
= 940 nm
• High radiant power
• High radiant intensity
• Angle of half intensity:
ϕ
= ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
16852
TSML1030
TSML1040
• Versatile terminal configurations
• Package matches with detector TEMT1000
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
TSML1000 is an infrared, 940 nm emitting diode in GaAlAs
multi quantum well (MQW) technology with high radiant
power and high speed molded in a clear, untinted plastic
package (with lens) for surface mounting (SMD).
APPLICATIONS
• For remote control
• Punched tape readers
• Encoder
• Photointerrupters
PRODUCT SUMMARY
COMPONENT
TSML1000
TSML1020
TSML1030
TSML1040
I
e
(mW/sr)
11
11
11
11
ϕ
(deg)
± 12
± 12
± 12
± 12
λ
P
(nm)
940
940
940
940
t
r
(ns)
15
15
15
15
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSML1000
TSML1020
TSML1030
TSML1040
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
Tape and reel
Bulk
REMARKS
MOQ: 1000 pcs, 1000 pcs/reel
MOQ: 1000 pcs, 1000 pcs/reel
MOQ: 1000 pcs, 1000 pcs/reel
MOQ: 1000 pcs, 1000 pcs/bulk
PACKAGE FORM
Reverse gullwing
Gullwing
Yoke
Axial leads
Rev. 2.1, 13-Mar-14
Document Number: 81033
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSML1000, TSML1020, TSML1030, TSML1040
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
I
F
t
p
/T = 0.5, t
p
=
100 μs
t
p
= 100 μs
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
t
≤
5s
Soldered on PCB, pad dimensions:
4 mm x 4 mm
T
sd
R
thJA
VALUE
5
100
200
1.0
190
100
-40 to +85
-40 to +100
< 260
400
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
°C
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
200
P
V
- Power Dissipation (mW)
180
160
140
120
100
80
60
40
20
0
0
16187
120
100
I
F
- Forward Current (mA)
10 20 30 40 50 60 70 80 90 100
T
amb
- Ambient Temperature (°C)
16188
80
60
40
20
0
0
10 20 30 40 50 60 70 80 90 100
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
TEST CONDITION
I
F
= 20 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 20 mA, t
p
= 20 ms
I
F
= 100 mA, t
p
= 20 ms
I
F
= 20 mA
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
f
3
40
11
40
-0.6
± 12
940
30
0.2
15
15
15
MIN.
TYP.
1.2
2.2
-1.8
10
MAX.
1.5
UNIT
V
V
mV/K
μA
pF
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
Rev. 2.1, 13-Mar-14
Document Number: 81033
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSML1000, TSML1020, TSML1030, TSML1040
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1000
Vishay Semiconductors
10 000
0.1
1000
0.2
100
0.5
1.0
0.05
Phi
e
- Radiant Power (mW)
t
p
= 100 μs
100
I
F
- Forward Current (mA)
0.02
t
p
/ T = 0.01
10
1
10
0.01
14335
0.1
0.10
1.00
10.00
100.00
1
10
100
1000
t
p
- Pulse Duration (ms)
I
F
- Forward Current (mA)
Fig. 6 - Radiant Power vs. Forward Current
Fig. 3 - Pulse Forward Current vs. Pulse Duration
1000
1.6
I
F
- Forward Current (mA)
1.2
I
e rel
;
Φ
e rel
100
I
F
= 20 mA
0.8
10
t
p
= 100 µs
t
p
/T= 0.001
1
0
1
2
3
0.4
0
-10 0 10
94 7993
50
100
140
21534
V
F
- Forward Voltage (V)
T
amb
- Ambient Temperature (°C)
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
1000
100
I
e
- Radiant Intensity (mW/sr)
t
p
= 100 μs
100
Φ
e rel
- Relative Radiant Power (%)
90
80
70
60
50
40
30
20
10
0
840
880
920
960
1000
1040
I
F
= 30 mA
10
1
0.1
1
10
100
1000
21445
I
F
- Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
λ
- Wavelength (nm)
Fig. 8 - Relative Radiant Power vs. Wavelength
Rev. 2.1, 13-Mar-14
Document Number: 81033
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSML1000, TSML1020, TSML1030, TSML1040
www.vishay.com
Vishay Semiconductors
REFLOW SOLDER PROFILE
0°
10°
20°
30°
260
240
I
e rel
- Relative Intensity
220
Temperature (°C)
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
200
180
160
140
120
100
80
+ 5 °C/s
- 5 °C/s
60 s to 120 s
5s
18234
60
0
17172
20 40 60 80 100 120 140 160 180 200 220
Time (s)
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
Fig. 10 - Lead Tin (SnPb) Reflow Solder Profile
PRECAUTIONS FOR USE
1. Over-current-proof
Customer must apply resistors for protection, otherwise
slight voltage shift will cause big current change (burn out
will happen).
2. Storage
• Storage temperature and rel. humidity conditions are:
°C to 35 °C, R.H. 60 %.
5
1 °C/s to 5 °C/s
Pre-heating
180 °C to 200 °C
260 °C max.
10 s max.
60 s max.
above 220 °C
• Floor life must not exceed 168 h, acc. to JEDEC level 3,
J-STD-020.
Once the package is opened, the products should be
used within a week. Otherwise, they should be kept in a
damp proof box with desiccant.
Considering tape life, we suggest to use products within
one year from production date.
• If opened more than one week in an atmosphere 5 °C to
35 °C, R.H. 60 %, devices should be treated at 60 °C
±
5 °C for 15 h.
• If humidity indicator in the package shows pink color
(normal blue), then devices should be treated with the
same conditions as 2.3.
120 s max.
22566
1 °C/s to 5 °C/s
Fig. 11 - Lead (Pb)-Free Reflow Solder Profile acc. J-STD-020
Rev. 2.1, 13-Mar-14
Document Number: 81033
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSML1000, TSML1020, TSML1030, TSML1040
www.vishay.com
PACKAGE DIMENSIONS
in millimeters:
TSML1000
Vishay Semiconductors
16159
PACKAGE DIMENSIONS
in millimeters:
TSML1020
3.8
± 0.2
Ø
1.9
± 0.2
0.85
0.15
± 0.05
0.3
2.5
± 0.2
2
± 0.2
1
± 0.1
1.1
0.5
0.4
4.5
± 0.1
2.3
± 0.1
0.75
1.4
2.7
± 0.2
C
A
16160
Rev. 2.1, 13-Mar-14
Document Number: 81033
5
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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