BS616LV2021DI datasheet, PDF - EEWORLD Datasheet

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BS616LV2021DI: DescriptionVery Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable; File Size253KB，11 Pages; ManufacturerBSI; Websitehttp://www.brilliancesemi.com/

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BS616LV2021DI Overview

Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

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BSI

FEATURES

Very Low Power/Voltage CMOS SRAM

128K x 16 or 256K x 8 bit switchable

DESCRIPTION

BS616LV2021

• Very low operation voltage : 2.4 ~ 5.5V

• Very low power consumption :

Vcc = 3.0V

C-grade: 20mA (Max.) operating current

I-grade: 25mA (Max.) operating current

0.1uA (Typ.) CMOS standby current

Vcc = 5.0V

C-grade: 40mA (Max.) operating current

I-grade: 45mA (Max.) operating current

0.6uA (Typ.) CMOS standby current

• High speed access time :

-70

70ns (Max.) at Vcc = 3.0V

-10

100ns (Max.) at Vcc = 3.0V

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE1, CE2 and OE options

• I/O Configuration x8/x16 selectable by CIO, LB and UB pin

The BS616LV2021 is a high performance, very low power CMOS Static

Random Access Memory organized as 131,072 words by 16 bits or

262,144 bytes by 8 bits selectable by CIO pin and operates from a wide

range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.1uA and maximum access time of 70/100ns in 3V operation.

Easy memory expansion is provided by active HIGH chip

enable2(CE2), active LOW chip enable1(CE1), active LOW output

enable(OE) and three-state output drivers.

The BS616LV2021 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV2021 is available in DICE form and 48-pin BGA type.

PRODUCT FAMILY

PRODUCT

FAMILY

BS616LV2021DC

BS616LV2021AC

BS616LV2021DI

BS616LV2021AI

OPERATING

TEMPERATURE

C to +70

-40

C to +85

Vcc

RANGE

2.4V ~ 5.5V

SPEED

( ns )

Vcc=

3.0V

CCSB1

, Max )

Vcc=

3.0V

POWER DISSIPATION

STANDBY

Operating

, Max )

Vcc=

5.0V

Vcc=

3.0V

Vcc=

5.0V

PKG TYPE

DICE

BGA-48-0608

DICE

BGA-48-0608

70 / 100

0.7uA

1.5uA

6uA

25uA

20mA

25mA

40mA

45mA

PIN CONFIGURATION

BLOCK DIAGRAM

A15

A14

A13

A12

A11

A10

2048

16(8)

Data

Input

Buffer

16(8)

Column I/O

Address

Input

Buffer

Row

Decoder

1024

Memory Array

1024 x 2048

D15

CE1

CE2

CIO

Vdd

Vss

Write Driver

16(8)

Sense Amp

128(256)

Column Decoder

16(8)

Data

Output

Buffer

14(16)

Control

Address Input Buffer

A16 A0 A1 A2 A3 A4 A5

(SAE)

Brilliance Semiconductor Inc

. reserves the right to modify document contents without notice.

R0201-BS616LV2021

Revision 2.4

April 2002

BS616LV2021DI Related Products

	BS616LV2021DI	BS616LV2021AC	BS616LV2021DC	BS616LV2021	BS616LV2021AI
Description	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

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