MGFC39V5964 datasheet, PDF - EEWORLD Datasheet

MGFC39V5964: Description5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET; CategoryDiscrete semiconductor The transistor; File Size90KB，2 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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MGFC39V5964 Overview

5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET

Parameter Name	Attribute value
Maker	Mitsubishi
package instruction	,
Reach Compliance Code	unknow
Maximum drain current (Abs) (ID)	5.6 A
FET technology	METAL SEMICONDUCTOR
Maximum operating temperature	175 °C
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	43 W
Base Number Matches	1

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