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UGB15HT

Description
15 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB
Categorysemiconductor    Discrete semiconductor   
File Size148KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

UGB15HT Overview

15 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB

UG12xT, UGF12xT, UGB12xT
www.vishay.com
Vishay General Semiconductor
High Voltage Ultrafast Rectifier
FEATURES
TO-220AC
ITO-220AC
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Soft recovery characteristics
• Low switching losses, high efficiency
2
UG12xT
PIN 1
PIN 2
2
1
UGF12xT
PIN 1
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder dip 275 °C max., 10 s per JESD 22-B106
(for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified
(for ITO-220AC and TO-263AB package)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
CASE
PIN 2
D
2
PAK (TO-263AB)
K
2
1
UGB12xT
PIN 1
PIN 2
TYPICAL APPLICATIONS
K
HEATSINK
For use in high voltage and high frequency power factor
correction, freewheeling diodes and secondary DC/DC
rectification application.
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
MECHANICAL DATA
Case:
TO-220AC, ITO-220AC, D
2
PAK (TO-263AB)
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs max.
(TO-263AB)
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
at I
F
= 12 A
T
J
max.
Package
Circuit configuration
12 A
500 V to 600 V
135 A
30 ns
1.5 V
150 °C
TO-220AC, ITO-220AC,
D
2
PAK
Single
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Max. repetitive peak reverse voltage
Max. working reverse voltage
Max. RMS voltage
Max. DC blocking voltage
Max. average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only) from terminals to heatsink t = 1 min
SYMBOL
V
RRM
V
RWM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
V
AC
UG12HT
500
400
350
500
12
135
-55 to +150
1500
UG12JT
600
480
420
600
UNIT
V
V
V
V
A
A
°C
V
Revision: 13-Jun-2018
Document Number: 88758
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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