Data Sheet
μ
PA2737GR
P-channel MOSFET
–30 V, –11 A, 13 mΩ
Description
The
μ
PA2737GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
R07DS0869EJ0100
Rev.1.00
Aug 28, 2012
Features
•
V
DSS
=
−30
V (T
A
= 25°C)
•
Low on-state resistance
⎯
R
DS(on)
= 13 mΩ MAX. (V
GS
=
−10
V, I
D
=
−11
A)
•
4.5 V Gate-drive available
•
Small and surface mount package (Power SOP8)
•
Pb-free and Halogen free
Power SOP8
Ordering Information
Part No.
μ
PA2737GR-E1-AT
μ
PA2737GR-E2-AT
LEAD PLATING
Pure Sn
PACKING
Tape 2500 p/reel
Package
Power SOP8
0.08 g TYP.
Absolute Maximum Ratings (T
A
= 25°C)
Item
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
∗
1
Total Power Dissipation
∗
2
Total Power Dissipation (PW = 10 sec)
∗
Channel Temperature
Storage Temperature
Single Avalanche Current
∗
3
Single Avalanche Energy
∗
3
2
Symbol
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
Ratings
−30
m20
m11
m110
1.1
2.5
150
−55
to
+150
11
12.1
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance
∗2
R
th(ch-A)
114
°C/W
Notes:
∗
1. PW
≤
10
μ
s, Duty Cycle
≤
1%
∗
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗
3. Starting T
ch
= 25°C, V
DD
=
−15
V, R
G
= 25
Ω,
V
GS
=
−20 →
0 V, L = 100
μ
H
R07DS0869EJ0100 Rev.1.00
Aug 28, 2012
Page 1 of 6
μ
PA2737GR
Electrical Characteristics (T
A
= 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
1
Forward Transfer Admittance
∗
Drain to Source On-state
1
Resistance
∗
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
∗
1
Reverse Recovery Time
Reverse Recovery Charge
Note: 1. Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
=
−20 →
0 V
−
I
D
V
DD
50
Ω
L
V
DD
PG.
BV
DSS
V
DS
V
GS
(−)
0
τ
Starting T
ch
τ
= 1
μ
s
Duty Cycle
≤
1%
V
DS
Wave Form
Symbol
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
MIN.
TYP.
MAX.
−1
m100
−2.5
Unit
μ
A
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
V
DS
=
−30
V, V
GS
= 0 V
V
GS
=
m20
V, V
DS
= 0 V
V
DS
=
−10
V, I
D
=
−1
mA
V
DS
=
−10
V, I
D
=
−5.5
A
V
GS
=
−10
V, I
D
=
−11
A
V
GS
=
−4.5
V, I
D
=
−11
A
V
DS
=
−10
V,
V
GS
= 0 V,
f = 1 MHz
V
DD
=
−15
V, I
D
=
−5.5
A,
V
GS
=
−10
V,
R
G
= 10
Ω
V
DD
=
−24
V,
V
GS
=
−10
V,
I
D
=
−11
A
I
F
= 11 A, V
GS
= 0 V
I
F
= 11 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
−1.0
4.5
9.7
17
1750
850
770
20
32
70
55
45
2.5
23
0.85
49
48
13
25
∗
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
R
G
V
DD
V
DS
(−)
90%
10% 10%
90%
V
GS
(−)
V
GS
Wave Form
0
10%
V
GS
90%
I
AS
V
DS
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
=
−2
mA
PG.
50
Ω
R
L
V
DD
R07DS0869EJ0100 Rev.1.00
Aug 28, 2012
Page 2 of 6
μ
PA2737GR
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
140
dT - Percentage of Rated Power - %
120
I
D
- Drain Current - A
100
80
60
40
20
0
0
25
50
75
100
125
150
175
-1000
I
D(pulse)
= –110 A
100 ms
30 ms
FORWARD BIAS SAFE OPERATING AREA
-100
I
D(DC)
= –11 A
PW
10
ms
=
1m
s
10
0
s
μ
-10
-1
-0.1
on
S(
)L
d
ite
im
R
D S
=
G
(V
V
10
)
Po
we
r
D
DC
Li
Single Pulse
m
ite
d
T
A
= 25°C
Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
is
si
pa
tio
n
-0.01
-0.01
-0.1
-1
-10
-100
T
A
- Ambient Temperature -
°C
V
DS
- Drain to Source Voltage – V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
°C/W
1000
R
th(ch-A)
= 114°C/W
100
10
1
R
th(ch-A)
：Mounted
on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
Single pulse
0.1
0.01
100
μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
-120
-100
I
D
- Drain Current - A
-100
-10
I
D
- Drain Current - A
-80
-60
-40
-20
V
GS
= –10 V
-1
T
A
= 150°C
75°C
25°C
–55°C
–4.5 V
-0.1
-0.01
Pulsed
-0
-0
-0.5
-1
-1.5
Pulsed
V
DS
= –10 V
-0
-1
-2
-3
-4
-0.001
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
R07DS0869EJ0100 Rev.1.00
Aug 28, 2012
Page 3 of 6
μ
PA2737GR
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
– Gate to Source Cut-off Voltage - V
| y
fs
| - Forward Transfer Admittance - S
-3
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
T
A
= 150°C
75°C
25°C
–55°C
-2
10
-1
Pulsed
V
DS
= –10 V
I
D
= –1mA
-0
-50
0
50
100
150
1
Pulsed
V
DS
= –10 V
0.1
-0.01
-0.1
-1
-10
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
40
Pulsed
30
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
25
20
15
10
5
0
-0
-5
-10
-15
-20
Pulsed
I
D
= –11 A
20
V
GS
= –4.5 V
10
–10 V
0
-1
-10
-100
-1000
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
25
V
GS
= –4.5 V
C
iss
, C
oss
, C
rss
- Capacitance - pF
Pulsed
I
D
= –11 A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
20
C
iss
15
1000
C
rss
V
GS
= 0 V
f = 1 MHz
100
-0.1
-1
-10
C
oss
10
V
GS
= –10 V
5
0
-50
0
50
100
150
-100
T
ch
- Channel Temperature -
°C
V
DS
- Drain to Source Voltage - V
R07DS0869EJ0100 Rev.1.00
Aug 28, 2012
Page 4 of 6
μ
PA2737GR
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-25
V
DS
- Drain to Source Voltage - V
V
DD
= –24V
–12V
–6V
V
DS
-10
V
GS
- Gate to Source Voltage - V
I
F
- Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
-20
-8
V
GS
-6
100
V
GS
= –10 V
-15
-10
-4
10
–4.5 V
0V
Pulsed
-5
I
D
= –11 A
-0
0
10
20
30
40
50
-2
-0
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Q
G
- Gate Charge - nC
V
F(S-D)
- Source to Drain Voltage - V
R07DS0869EJ0100 Rev.1.00
Aug 28, 2012
Page 5 of 6
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