Data Sheet
μ
PA3753GR
MOS FIELD EFFECT TRANSISTOR
Description
R07DS0758EJ0100
Rev.1.00
May 25, 2012
The
μ
PA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application.
Features
•
Dual chip type
•
Low on-state resistance
⎯
R
DS(on)
= 56 mΩ MAX. (V
GS
= 10 V, I
D
= 2.5 A)
⎯
R
DS(on)
= 72 mΩ MAX. (V
GS
= 4.5 V, I
D
= 2.5 A)
•
Low gate charge
⎯
Q
G
= 13.4 nC TYP. (V
GS
= 10 V)
•
Small and surface mount package (Power SOP8)
Ordering Information
Part No.
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Power SOP8
0.08 g TYP.
Package
μ
PA3753GR-E1-AT
μ
PA3753GR-E2-AT
*1
*1
Note:
*1. Pb-Free (This product does not contain Pb in the external electrode and other parts.)
“-E1”,”-E2” indicates the unit orientation.
Absolute Maximum Ratings (T
A
= 25°C)
Item
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
*1
Total Power Dissipation (1unit)
Total Power Dissipation (2units)
*2
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
*3
*3
*2
Symbol
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
STG
I
AS
E
AS
Ratings
60
±20
±5.0
±20
0.85
1.12
150
−55
to
+150
5.0
2.5
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Notes: *1. PW
≤
10
μ
s, Duty Cycle
≤
1%
*2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
*3. Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 100
μ
H
R07DS0758EJ0100 Rev.1.00
May 25, 2012
Page 1 of 6
μ
PA3753GR
Chapter Title
Electrical Characteristics (T
A
= 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
*1
Drain to Source On-state
Resistance
*1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
*1
Reverse Recovery Time
Reverse Recovery Charge
Note:
*1. Pulsed
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
DS
90%
90%
10%
10%
Symbol
I
DSS
I
GSS
V
GS(off)
| yfs |
R
DS(on)1
R
DS(on)2
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
MIN.
TYP.
MAX.
1.0
±100
2.5
Unit
μ
A
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
V
DS
= 60 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 2.5 A
V
GS
= 10 V, I
D
= 2.5 A
V
GS
= 4.5V, I
D
= 2.5 A
V
DS
= 10 V,
V
GS
= 0 V,
f = 1.0 MHz
I
D
= 2.5 A, V
DD
= 30 V,
V
GS
= 10 V,
R
G
= 10
Ω
V
GS
= 10 V, I
D
= 5 A ,
V
DD
= 48 V
I
F
= 5.0 A, V
GS
= 0 V
I
F
= 5.0 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
1.5
2.5
44
49
640
72
32
8.5
3.7
30
5.1
13.4
1.6
3.1
56
72
1.2
22
36
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
μ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
R07DS0758EJ0100 Rev.1.00
May 25, 2012
Page 2 of 6
μ
PA3753GR
Chapter Title
Typical Characteristics (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.2
140
dT - Percentage of Rated Power - %
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
P
T
- Total Power Dissipation - W
1
0.8
0.6
1 unit
0.4
0.2
0
0
25
50
Mounted on glass epxy
board of
25.4 mm x 25.4 mm x
0.8 mmt
2 units
75
100
125
150
175
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
T
A
- Ambient Temperature -
°C
100
I
D(pulse)
= 20 A
100 ms
10 ms
PW = 200
μ
s
1 ms
I
D
- Drain Current - A
10
I
D(DC)
= 5 A
1
d
ite
m )
Li 0V
)
1
on
=
S(
R
D
V
GS
(
10 s
0.1
Power Dissipation Limited
Single Pulse T
A
= 25ºC
Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
0.01
0.01
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
°C/W
1000
R
th(ch-A)
= 148ºC/W
100
10
1
Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
Single pulse, 1unit
T
A
= 25ºC
0.1
0.01
100
μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0758EJ0100 Rev.1.00
May 25, 2012
Page 3 of 6
μ
PA3753GR
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
20
V
GS
= 10 V
I
D
- Drain Current - A
100
4.5 V
10
I
D
- Drain Current - A
15
10
1
T
A
= 150°C
75°C
25°C
–55°C
0.1
5
Pulsed
0
0
0.4
0.8
1.2
1.6
0.01
V
DS
= 10 V
Pulsed
0
1
2
3
4
0.001
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
– Gate to Source Cut-off Voltage - V
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
3
100
T
A
= –55°C
25°C
75°C
150°C
10
2
1
1
V
DS
= 10 V
I
D
= 1.0 mA
0
-50
0
50
100
150
0.1
Pulsed,
V
DS
= 10 V
0.01
0.01
0.1
1
10
100
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
R
DS(on)
- Drain to Source On-state Resistance - mΩ
Pulsed
Pulsed
160
80
V
GS
= 4.5 V
60
120
40
10 V
80
I
D
= 2.5 A
40
20
0
0.1
1
10
100
0
0
4
8
12
16
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R07DS0758EJ0100 Rev.1.00
May 25, 2012
Page 4 of 6
μ
PA3753GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
100
1000
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
80
V
GS
= 4.5 V
I
D
= 2.5 A
C
iss
60
V
GS
= 10 V
I
D
= 2.5 A
100
C
oss
40
20
Pulsed
0
-50
0
50
100
150
V
GS
= 0 V
f = 1.0 MHz
10
0.1
1
C
rss
10
100
T
ch
- Channel Temperature -
°C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
V
DS
- Drain to Source Voltage - V
t
d(off)
12
V
DD
= 48 V
30 V
12 V
10
8
6
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
f
, t
d(off)
, t
r
- Switching Time - ns
40
t
d(on)
10
t
f
V
DD
= 30 V
V
GS
= 10 V
R
G
= 10
Ω
t
r
20
4
2
I
D
= 5 A
1
0.1
1
10
100
0
0
2
4
6
8
10
12
14
16
0
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
Q
G
- Gate Charge - nC
REVERSE RECOVERY TIME vs
DIODE FORWARD CURRENT
100
V
GS
= 10 V
I
F
- Diode Forward Current - A
t
rr
- Reverse Recovery Time - ns
100
10
1
10
4.5 V
0V
0.1
1
V
GS
= 0 V
di/dt = 100 A/
μ
s
0.1
0.1
1
10
100
0.01
Pulsed
0.001
0
0.4
0.8
1.2
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
R07DS0758EJ0100 Rev.1.00
May 25, 2012
Page 5 of 6
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