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UPD166020T1F

Description
MOS INTEGRATED CIRCUIT
File Size388KB,26 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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UPD166020T1F Overview

MOS INTEGRATED CIRCUIT

Preliminary
Data Sheet
μ
PD166020T1F
MOS INTEGRATED CIRCUIT
1. Overview
1.1 Description
R07DS0441EJ0100
Rev.1.00
Aug 15, 2011
The
μ
PD166020T1F is a single N-channel high-side switch with charge pump, diagnostic feedback with load current
sense and embedded protection functions.
1.2 Features
Built-in charge pump
Low on-state resistance
Short circuit protection
- Shutdown by over current detection and over load detection
Over temperature protection
- Shutdown with auto-restart on cooling
Built-in diagnostic function
- Proportional load current sensing
- Defined fault signal in case of abnormal load condition
Under voltage lock out
Reverse battery protection by self turn on of N-ch MOSFET
Small multi-chip package: JEDEC 5-pin TO-252 (MSL: 3, profile acc. J-STD-20C)
AEC Qualified
1.3 Applications
Light bulb (to 65 W) switching
Switching of all types of 14 V DC grounded loads, such as LED, inductor, resistor and capacitor
Replacement for fuse and relay
2. Ordering Information
Part No.
μ
PD166020T1F-E1-AY
1
Lead plating
Sn
Packing
Tape 2500 p/reel
Package
5-pin TO-252 (MP-3ZK)
Note:
1. Pb-free (This product does not contain Pb in the external electrode.)
R07DS0441EJ0100 Rev.1.00
Aug 15, 2011
Page 1 of 23

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Description MOS INTEGRATED CIRCUIT MOS INTEGRATED CIRCUIT

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