Crystal oscillator
Epson Toyocom
Product Number (please contact us)
CRYSTAL OSCILLATOR
SPXO
SG-645
SG-636
: Q33645xx1xxxx00
: Q33636xx1xxxx00
SG - 645
/
SG - 636
series
•Frequency
range
•Supply
voltage
•Function
•External
dimensions
:
:
:
:
2.21675 MHz to 135 MHz
2.5 V / 3.3 V / 5.0 V
Output enable(OE) or Standby(
ST
)
7.1 × 5.1 × 1.5 t (mm)···SG-645
10.5 × 5.8 × 2.7 t (mm)···SG-636
Actual size
SG-645 series
SG-636 series
Specifications (characteristics)
Item
Output frequency range
Supply voltage
Storage
Temperature temperature
range
Operating
temperature
Frequency tolerance
Current consumption
Disable current
Stand-by current
Symmetry
High output voltage
Low output voltage
Output load condition
(TTL)
Output load condition
(CMOS)
Output enable /
disable input voltage
Rise time / Fall time
Start-up time
Frequency aging
Symbol
SG-636 PTF
2.21675 MHz
to 41.000 MHz
5.0 V
±0.5
V
Specifications
SG-636 PCE
SG-636 SCE
2.21675 MHz
to 40.000 MHz
3.3 V
±0.3
V
-55
°C
to +100
°C
-20
°C
to +70
°C
17 mA Max.
10 mA Max.
-
40 % to 60 %
45 % to 55 %
C:
±100
× 10
-6
9 mA Max.
5 mA Max.
5 mA Max.
3 mA Max.
2
μA
Max.
-
45 % to 55 %
-
V
CC
-0.4 V Min.
0.4 V Max.
10 TTL Max.
50 pF Max.
2.0 V Min.
0.8 V Max.
7 ns Max.
5 ns Max.
4 ms Max.
30 pF Max.
80 % V
CC
Min.
20 % V
CC
Max.
5 ns Max.
-
4 ms Max.
±5 ×
10
-6
/ year Max.
-
15 pF Max.
OE Terminal or
ST
Terminal (SCE)
CMOS load:20 % V
CC
to 80 % V
CC
level
TTL load:0.4 V to 2.4 V level
Time at minimum supply voltage to be 0 s
+25
°C,
V
CC
=5.0 V/3.3 V/2.5 V, First year
-20
°C
to +70
°C
No load condition
OE=GND
ST
=GND(SCE)
CMOS load:50 % V
CC
level
TTL load: 1.4 V level
I
OH
=-8 mA(PTF)/-4 mA(SCE,PCE),
/-3.2 mA(PDE)
I
OL
=16 mA(PTF)/ 4 mA(SCE,PCE)
/3.2 mA(PDE)
L_CMOS
≤
15 pF
SG-636 PDE
2.21675 MHz
to 40.000 MHz
2.5 V
±0.25
V
Store as bare product after unpacking
Remarks
f
0
V
CC
T_stg
T_use
f_tol
I
CC
I_dis
I_std
SYM
V
OH
V
OL
L_TTL
L_CMOS
V
IH
V
IL
t
r
/
t
f
t_str
f_aging
Specifications (characteristics)
Specifications
Item
Output frequency range
Supply voltage
Storage
Temperature temperature
range
Operating
temperature
Frequency tolerance
Current consumption
Disable curren
Stand-by current
Symmetry
High output voltage
Low output voltage
Output load condition
Output enable /
disable input voltage
Rise time / Fall time
Start-up time
Frequency aging
Symbol
SG-636 PTG
SG-636 PHG
2.21675 MHz to 33.000 MHz
*1
4.5 V to 5.5 V
-55
°C
to +100
°C
-20
°C
to +70
°C
B:
±50 ×
10
-6
25 mA Max.
20 mA Max.
-
-
40 % to 60 %
2.4 V Min.
-
C:
±100 ×
10
-6
12 mA Max.
10 mA Max.
50
μA
Max.
-20
°C
to +70
°C
No load condition
OE=GND (PTG,PHG,PCG)
ST
=GND (SCG)
50 % V
CC
level, L_CMOS=25 pF
1.4 V level, L_CMOS=25 pF
I
OH
=-8 mA
I
OH
=-16 mA
I
OL
=8 mA
I
OL
=16 mA
OE Terminal or
ST
Terminal
20 % V
CC
to 80 % V
CC
level, L_CMOS
≤
25 pF
TTL load:0.4 V to 2.4 V level, L_CMOS
≤
25 pF
t=0 at 90 % V
CC
+25
°C,
V
CC
=5.0 V/ 3.3 V, First year
SG-636 PCG
SG-636 SCG
2.7 V to 3.6 V
Store as bare product after unpacking
Remarks
f
0
V
CC
T_stg
T_use
f_tol
I
CC
I_dis
I_std
SYM
V
OH
V
OL
L_CMOS
V
IH
V
IL
t
r
/
t
f
t_str
f_aging
-
2.4 ns Max.
45 % to 55 %
-
-
V
CC
-0.4 V Min.
V
CC
-0.4 V Min.
-
-
0.4 V Max.
0.4 V Max.
-
25 pF Max.
2.0 V Min.
70 % V
CC
Min.
0.8 V Max.
20 % V
CC
Max.
3.4 ns Max.
4 ns Max.
-
12 ms Max.
±5 ×
10
-6
/ year Max.
*1
4.1250 MHz < f
o
< 4.4336 MHz, 8.2500 MHz < f
o
< 8.8672 MHz, 16.500 MHz < f
o
< 17.7344 MHz : Unavailable
http://www.epsontoyocom.co.jp
Crystal oscillator
Specifications (characteristics)
Item
Output frequency range
Supply voltage
Storage
Temperature temperature
range
Operating
temperature
Frequency tolerance
Current consumption
Disable current
Stand-by current
Symmetry
High output voltage
Low output voltage
Output load condition
(TTL)
Output load condition
(CMOS)
Output enable /
disable input voltage
Rise time / Fall time
Start-up time
Frequency aging
Symbol
SG-636 PTW
/
STW
SG-645 PTW
/
STW
Specifications
SG-636 PHW
/
SHW
SG-636 PCW
/
SCW
SG-645 PHW
/
SHW
SG-645 PCW
/
SCW
32.001 MHz to 135.000 MHz
5.0 V
±0.5
V
3.3 V
±0.3
V
Epson Toyocom
Remarks
f
0
V
CC
T_stg
T_use
f_tol
I
CC
I_dis
I_std
SYM
V
OH
V
OL
L_TTL
L_CMOS
V
IH
V
IL
5 TTL Max.
SG-636P**:-55
°C
to +100
°C
/ SG-645P**:-55
°C
to +125
°C
-20
°C
to +70
°C
-
-40
°C
to +85
°C
B:
±50 ×
10
-6
C:
±100 ×
10
-6
-
M:
±50 ×
10
-6
45 mA Max.
28 mA Max.
30 mA Max.
16 mA Max.
50
μA
Max.
-
40 % to 60 %
40 % to 60 %
-
V
CC
-0.4 V Min.
0.4 V Max.
-
15 pF Max.
2.0 V Min.
0.8 V Max.
-
4 ns Max.
4 ns Max.
-
10 ms Max.
±5 ×
10
-6
/ year Max.
70 % V
CC
Min.
20 % V
CC
Max.
-
-
Store as bare product after unpacking
SG-645PCW
/
SCW Only
-20
°C
to +70
°C
*1
-40
°C
to +85
°C
: SG-645PCW
/
SCW Only
No load condition( Max. frequency range )
OE=GND (PTW,PHW,PCW)
ST
=GND (STW,SHW,SCW)
50 % V
CC
level, L_CMOS=Max.
1.4 V level, L_CMOS=Max.
I
OH
=-16 mA(PTW , STW , PHW , SHW)
/-8 mA(PCW , SCW)
I
OL
= 16 mA(PTW , STW , PHW , SHW)
/ 8 mA(PCW , SCW)
f
O
≤
90 MHz, Max.Supply voltage.
Max.frequency, Max.Supply voltage.
OE Terminal or
ST
Terminal
20 % V
CC
to 80 % V
CC
level
,
L_CMOS
≤
Max.
0.4 V to 2.4 V level
Time at minimum supply voltage to be 0 s
+25
°C,
V
CC
=5.0 V / 3.3 V, First year
t
r
/
t
f
t_str
f_aging
*1
SG-636 series “C” tolerance : 40 MHz<f
0
≤135
MHz
.
External dimensions
SG-645 series
7.1±0.2
#4
#3
(Unit:mm)
Footprint (Recommended)
(Unit:mm)
SG-645 series
Pin map
Pin
1
2
3
4
Connection
OE or
ST
GND
OUT
V
CC
1.8
2.0
PCW 0245A
#1
#2
4.6±0.2
5.1±0.2
E135.00C
0.4
5.08
1.5 Max.
0 Min.
(0.75)
3.8
(0.75)
4.2
SG-636 series
#4
5.08
#3
Pin map
Pin
1
2
3
4
10.5 Max.
5.8 Max.
PTF9352A
#1
#2
5.0
E 18.4320C
Connection
OE or
ST
GND
OUT
V
CC
SG-636 series
1.3
2.1
2.7 Max.
5.08
0.05Min.
3.6
Metal may be exposed on the top or bottom of this product.
This will not affect any quality, reliability or electrical spec.
Note.
OE pin (PTF,PCE,PDE,PTW,PHW,PCW,PTG,PHG,PCG)
OE pin = "H" or "open" : Specified frequency output.
OE pin = "L" : Output is high impedance.
ST
pin (STW, SHW, SCW,SCG)
ST
pin = "H" or "open" : Specified frequency output.
ST
pin = "L" : Output is low level (weak pull - down),oscillation stops.
ST
pin (SCE)
ST
pin = "H" or "open" : Specified frequency output.
ST
pin = "L" : Output is low level ,oscillation stops.
To maintain stable operation, provide by-pass capacitor with
more than 0.1
μF
at a location as near as possible to the power
source terminal of the crystal products (between V
CC
- GND).
4.6
0.51
(1.0)
(1.0)
5.08
http://www.epsontoyocom.co.jp
Embedded System
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