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VB20120C

Description
10 A, 120 V, SILICON, RECTIFIER DIODE, TO-263AB
Categorysemiconductor    Discrete semiconductor   
File Size165KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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VB20120C Overview

10 A, 120 V, SILICON, RECTIFIER DIODE, TO-263AB

New Product
V20120C, VF20120C, VB20120C & VI20120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.54 V at I
F
= 5 A
TMBS
®
TO-220AB
ITO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
2
V20120C
PIN 1
PIN 3
PIN 2
CASE
3
1
VF20120C
PIN 1
PIN 3
PIN 2
2
3
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
1
TO-263AB
K
K
TO-262AA
2
1
1
VB20120C
PIN 1
PIN 2
K
HEATSINK
2
3
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
VI20120C
PIN 1
PIN 3
PIN 2
K
Case:
TO-220AB,
TO-262AA
ITO-220AB,
TO-263AB
and
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 10 A
T
J
max.
2 x 10 A
120 V
120 A
0.64 V
150 °C
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(Fig. 1)
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
V
AC
T
J
, T
STG
V20120C
VF20120C
VB20120C
VI20120C
UNIT
V
A
A
V
°C
120
20
10
120
1500
- 40 to + 150
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
Document Number: 89040
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1

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VB20120C V20120C VB20120C-E3/4W VF20120C
Description 10 A, 120 V, SILICON, RECTIFIER DIODE, TO-263AB 10 A, 120 V, SILICON, RECTIFIER DIODE, TO-263AB 10 A, 120 V, SILICON, RECTIFIER DIODE, TO-263AB 10 A, 120 V, SILICON, RECTIFIER DIODE, TO-263AB
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