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ST303C08FK1

Description
Silicon Controlled Rectifier, 190000mA I(T), 800V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size172KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

ST303C08FK1 Overview

Silicon Controlled Rectifier, 190000mA I(T), 800V V(DRM)

ST303C08FK1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1124599811
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
Nominal circuit commutation break time30 µs
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
JESD-609 codee0
Maximum leakage current50 mA
On-state non-repetitive peak current8300 A
Maximum on-state current190000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Off-state repetitive peak voltage800 V
Terminal surfaceTIN LEAD
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Bulletin I25172 rev. B 04/00
ST303C..C SERIES
INVERTER GRADE THYRISTORS
Features
Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Puk Version
620A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AB (E-PUK)
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range (*)
T
J
ST303C..C
620
55
1180
25
7950
8320
316
289
400 to 1200
10 to 30
- 40 to 125
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°
C
(*) t = 10 to 20µs for 400 to 800V devices
q
t = 15 to 30µs for 1000 to 1200V devices
q
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