VEMT3700
Vishay Semiconductors
Silicon NPN Phototransistor
FEATURES
•
•
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•
•
•
•
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Package type: surface mount
Package form: PLCC-2
Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation
Fast response times
Angle of half sensitivity:
ϕ
= ± 60°
Package notch indicates collector
Package matched with IR emitter series VSML3710
Floor life: 168 h, MSL 3, acc. J-STD-020
Lead (Pb)-free reflow soldering
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Photo interrupters
Miniature switches
Counters
Encoders
Position sensors
Ligth sensors
94 8553
DESCRIPTION
VEMT3700 is a high speed silicon NPN epitaxial planar
phototransistor in a miniature PLCC-2 package for surface
mounting on printed boards. The device is sensitive to
visible and near infrared radiation.
APPLICATIONS
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PRODUCT SUMMARY
COMPONENT
VEMT3700
I
ca
(mA)
0.5
ϕ
(deg)
± 60
λ
0.1
(nm)
450 to 1080
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
VEMT3700-GS08
VEMT3700-GS18
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 7500 pcs, 1500 pcs/reel
MOQ: 8000 pcs, 8000 pcs/reel
PACKAGE FORM
PLCC-2
PLCC-2
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
TEST CONDITION
SYMBOL
V
CEO
V
ECO
I
C
I
CM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
70
5
50
100
100
100
- 40 to + 100
- 40 to + 100
260
400
UNIT
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
t
p
/T
≤
0.1, t
p
≤
10 μs
Acc. reflow solder profile fig. 10
Soldered on PCB with pad dimensions: 4 mm x 4 mm
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
Document Number: 81478
Rev. 1.6, 14-Jul-10
For technical questions, contact:
detectortechsupport@vishay.com
www.vishay.com
1
VEMT3700
Vishay Semiconductors
Silicon NPN Phototransistor
125
P
V
- Power Dissipation Limit (mW)
R
thJA
= 400 K/W
100
75
50
25
0
0
10 20 30 40 50 60 70 80 90 100
T
amb
- Ambient Temperature (°C)
20376
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
Collector light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
I
C
= 0.1 mA
V
S
= 5 V, I
C
= 1 mA,
λ
= 950 nm,
R
L
= 1 kΩ
V
S
= 5 V, I
C
= 1 mA,
λ
= 950 nm,
R
L
= 100
Ω
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
TEST CONDITION
I
C
= 1 mA
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E = 0
E
e
= 1
mW/cm
2
,
λ
= 950 nm,
V
CE
= 5 V
SYMBOL
V
(BR)CEO
I
CEO
C
CEO
I
ca
ϕ
λ
p
λ
0.1
V
CEsat
t
r
/t
f
t
r
/t
f
f
c
0.25
MIN.
70
1
3
0.5
± 60
850
450 to 1080
0.15
6
2
180
0.3
200
TYP.
MAX.
UNIT
V
nA
pF
mA
deg
nm
nm
V
μs
μs
kHz
Rise time, fall time
Cut-off frequency
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
10
4
I
CEO
- Collector Dark Current (nA)
I
ca rel
- Relative Collector Current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
CE
= 5 V
E
e
= 1 mW/cm
2
λ
= 950 nm
10
3
V
CE
= 20 V
10
2
10
1
10
94 8304
20
40
60
80
100
94 8239
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Fig. 3 - Relative Collector Current vs. Ambient Temperature
www.vishay.com
2
For technical questions, contact:
detectortechsupport@vishay.com
Document Number: 81478
Rev. 1.6, 14-Jul-10
VEMT3700
Silicon NPN Phototransistor
Vishay Semiconductors
10
8
t
on
/t
off
- Turn-on/Turn-off Time (µs)
I
ca
- Collector Light Current (mA)
1
6
V
CE
= 5 V
R
L
= 100
Ω
λ
= 950 nm
0.1
4
0.01
V
CE
= 5 V
λ
= 950 nm
t
off
2
t
on
0
0.001
0.01
94 8316
0.1
1
10
94 8293
0
2
4
6
8
10
12
14
E
e
- Irradiance (mW/cm²)
I
C
- Collector Current (mA)
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
10
S (λ)
rel
- Relative Spectral Sensitivity
100
I
ca
- Collector Light Current (mA)
1.0
0.8
0.6
0.4
0.2
0
400
600
800
1000
λ
- Wavelength (nm)
λ
= 950 nm
1
E
e
= 1 mW/cm
2
0.5 mW/cm
0.2 mW/cm
2
0.1
0.1
1
10
2
94 8317
V
CE
- Collector Emitter Voltage (V)
94 8348
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
C
CEO
- Collector Emitter Capacitance (pF)
10
f = 1 MHz
0°
10°
20°
30°
S
rel
- Relative Sensitivity
8
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
6
4
2
0
0.1
1
10
100
94 8318
0.6
0.4
0.2
0
94 8294
V
CE
- Collector Emitter Voltage (V)
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
Document Number: 81478
Rev. 1.6, 14-Jul-10
For technical questions, contact:
detectortechsupport@vishay.com
www.vishay.com
3
ϕ
- Angular Displacement
VEMT3700
Vishay Semiconductors
Silicon NPN Phototransistor
PACKAGE DIMENSIONS
in millimeters
Mounting Pad Layout
1.2
area covered with
solder resist
2.6 (2.8)
4
1.6 (1.9)
20873
SOLDER PROFILE
DRYPACK
300
250
255 °C
240 °C
217 °C
max. 260 °C
245 °C
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Temperature (°C)
200
max. 30 s
150
max. 120 s
100
50
0
0
50
100
150
200
250
300
max. ramp up 3 °C/s max. ramp down 6 °C/s
max. 100 s
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020.
DRYING
Time (s)
19841
Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
www.vishay.com
4
For technical questions, contact:
detectortechsupport@vishay.com
Document Number: 81478
Rev. 1.6, 14-Jul-10
4
VEMT3700
Silicon NPN Phototransistor
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape
(DIN IEC (CO) 564) for automatic component insertion.
Cavities of blister tape are covered with adhesive tape.
component is followed by a carrier tape trailer with a least
75 empty compartments and sealed with cover tape.
Vishay Semiconductors
120°
Adhesive tape
10.0
9.0
4.5
3.5
Blister tape
2.5
1.5
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
13.00
12.75
63.5
60.5
Component cavity
94 8670
180
178
14.4 max.
94 8665
Fig. 11 - Blister Tape
3.5
3.1
2.2
2.0
Fig. 14 - Dimensions of Reel-GS08
5.75
5.25
3.6
3.4
1.85
1.65
120°
4.0
3.6
8.3
7.7
10.4
8.4
4.5
3.5
2.5
1.5
0.25
13.00
12.75
62.5
60.0
1.6
1.4
4.1
3.9
2.05
1.95
4.1
3.9
94 8668
Fig. 12 - Tape Dimensions in mm for PLCC-2
MISSING DEVICES
A maximum of 0.5 % of the total number of components per
reel may be missing, exclusively missing components at the
beginning and at the end of the reel. A maximum of three
consecutive components may be missing, provided this gap
is followed by six consecutive components.
De-reeling direction
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
321
329
14.4 max.
18857
Fig. 15 - Dimensions of Reel-GS18
COVER TAPE REMOVAL FORCE
The removal force lies between 0.1 N and 1.0 N at a removal
speed of 5 mm/s. In order to prevent components from
popping out of the blisters, the cover tape must be pulled off
at an angle of 180° with regard to the feed direction.
94 8158
> 160 mm
40 empty
compartments
min. 75 empty
compartments
Tape leader
Carrier leader
Carrier trailer
Fig. 13 - Beginning and End of Reel
The tape leader is at least 160 mm and is followed by a
carrier tape leader with at least 40 empty compartments.
The tape leader may include the carrier tape as long as the
cover tape is not connected to the carrier tape. The least
Document Number: 81478
Rev. 1.6, 14-Jul-10
For technical questions, contact:
detectortechsupport@vishay.com
www.vishay.com
5
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