BSC067N06LS3G
MOSFET
OptiMOS
TM
3Power-Transistor,60V
Features
•Idealforhighfrequencyswitchingandsync.rec.
•OptimizedtechnologyforDC/DCconverters
•ExcellentgatechargexR
DS(on)
product(FOM)
•Verylowon-resistanceR
DS(on)
•Superiorthermalresistance
•N-channel,logiclevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC
1)
fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
8
7
SuperSO8
5
6
5
6
7
8
1
2
3
4
4
3
2
1
Drain
Pin 5-8
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Value
60
6.7
79
Unit
V
mΩ
A
*1: Internal body diode
Gate
Pin 4
*1
Source
Pin 1-3
Type/OrderingCode
BSC067N06LS3 G
Package
PG-TDSON-8
Marking
067N06LS
RelatedLinks
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.5,2021-09-15
OptiMOS
TM
3Power-Transistor,60V
BSC067N06LS3G
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.2.5,2021-09-15
OptiMOS
TM
3Power-Transistor,60V
BSC067N06LS3G
1Maximumratings
atT
A
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Min.
-
-
-
-
-
-
-
-20
-
-
-55
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
79
50
59
37
15
316
47
20
69
2.5
150
Unit
Note/TestCondition
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=4.5V,T
C
=25°C
V
GS
=4.5V,T
C
=100°C
V
GS
=10V,T
A
=25°C,R
thJA
=50K/W
2)
T
C
=25°C
I
D
=50A,R
GS
=25Ω
-
T
C
=25°C
T
A
=25°C,R
thJA
=50K/W
2)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Continuous drain current
1)
I
D
A
Pulsed drain current
3)
Avalanche energy, single pulse
4)
Gate source voltage
Power dissipation
Operating and storage temperature
I
D,pulse
E
AS
V
GS
P
tot
T
j
,T
stg
A
mJ
V
W
°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case
Device on PCB,
minimal footprint
Device on PCB,
6 cm
2
cooling area
2)
Symbol
R
thJC
R
thJA
R
thJA
Values
Min.
-
-
-
Typ.
-
-
-
Max.
1.8
62
50
Unit
K/W
K/W
K/W
Note/TestCondition
-
-
-
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.5,2021-09-15
OptiMOS
TM
3Power-Transistor,60V
BSC067N06LS3G
3Electricalcharacteristics
atT
j
=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
Values
Min.
60
1.2
-
-
-
-
-
-
38
Typ.
-
1.7
0.1
10
10
8.0
5.4
1.3
77
Max.
-
2.2
1
100
100
12.1
6.7
-
-
Unit
V
V
µA
nA
mΩ
Ω
S
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=35µA
V
DS
=60V,V
GS
=0V,T
j
=25°C
V
DS
=60V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=4.5V,I
D
=25A
V
GS
=10V,I
D
=50A
-
|V
DS
|>2|I
D
|R
DS(on)max
,I
D
=50A
Table5Dynamiccharacteristics
Parameter
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
3800
710
32
15
26
37
7
Max.
5100
940
-
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=30V,f=1MHz
V
GS
=0V,V
DS
=30V,f=1MHz
V
GS
=0V,V
DS
=30V,f=1MHz
V
DD
=30V,V
GS
=10V,I
D
=20A,
R
G
=2Ω
V
DD
=30V,V
GS
=10V,I
D
=20A,
R
G
=2Ω
V
DD
=30V,V
GS
=10V,I
D
=20A,
R
G
=2Ω
V
DD
=30V,V
GS
=10V,I
D
=20A,
R
G
=2Ω
Table6Gatechargecharacteristics
2)
Parameter
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
1)
Gate plateau voltage
Gate charge total
1)
Output charge
1)
Symbol
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
Q
oss
Values
Min.
-
-
-
-
-
-
-
-
Typ.
14
7
5
12
23
3.6
51
35
Max.
-
-
-
-
30
-
67
47
Unit
nC
nC
nC
nC
nC
V
nC
nC
Note/TestCondition
V
DD
=30V,I
D
=50A,V
GS
=0to4.5V
V
DD
=30V,I
D
=50A,V
GS
=0to4.5V
V
DD
=30V,I
D
=50A,V
GS
=0to4.5V
V
DD
=30V,I
D
=50A,V
GS
=0to4.5V
V
DD
=30V,I
D
=50A,V
GS
=0to4.5V
V
DD
=30V,I
D
=50A,V
GS
=0to4.5V
V
DD
=30V,I
D
=50A,V
GS
=0to10V
V
DD
=30V,V
GS
=0V
1)
2)
Defined by design. Not subject to production test
See
″Gate
charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.5,2021-09-15
OptiMOS
TM
3Power-Transistor,60V
BSC067N06LS3G
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
I
S
I
S,pulse
V
SD
t
rr
Q
rr
Values
Min.
-
-
-
-
-
Typ.
-
-
0.9
40
39
Max.
58
316
1.2
-
-
Unit
A
A
V
ns
nC
Note/TestCondition
T
C
=25°C
T
C
=25°C
V
GS
=0V,I
F
=50A,T
j
=25°C
V
R
=30V,I
F
=20A,di
F
/dt=100A/µs
V
R
=30V,I
F
=20A,di
F
/dt=100A/µs
Final Data Sheet
5
Rev.2.5,2021-09-15
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