BSC0402NS
MOSFET
OptiMOS
TM
5Power-Transistor,150V
Features
•OptimizedforhighperformanceSMPS,e.g.Sync.Rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•LowQ
rr
8
7
SuperSO8
5
6
5
6
7
8
1
2
3
4
4
3
2
1
Productvalidation
QualifiedaccordingtoJEDECStandard
S1
S2
S3
G4
8D
7D
6D
5D
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Q
rr
Value
150
9.3
80
60
Unit
V
mΩ
A
nC
Type/OrderingCode
BSC0402NS
Package
PG-TDSON-8
Marking
0402NS
RelatedLinks
-
Final Data Sheet
1
Rev.2.0,2019-12-16
OptiMOS
TM
5Power-Transistor,150V
BSC0402NS
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.0,2019-12-16
OptiMOS
TM
5Power-Transistor,150V
BSC0402NS
1Maximumratings
atT
A
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Continuous drain current
Pulsed drain current
1)
Avalanche energy, single pulse
2)
Gate source voltage
Power dissipation
Operating and storage temperature
Symbol
I
D
I
D,pulse
E
AS
V
GS
P
tot
T
j
,T
stg
Values
Min.
-
-
-
-
-20
-
-55
Typ.
-
-
-
-
-
-
-
Max.
80
55
320
130
20
139
150
Unit
A
A
mJ
V
W
°C
Note/TestCondition
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
T
A
=25°C
I
D
=50A,R
GS
=25Ω
-
T
C
=25°C
IEC climatic category; DIN IEC 68-1:
55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case,
bottom
Symbol
R
thJC
Values
Min.
-
-
Typ.
0.54
-
Max.
0.9
50
Unit
Note/TestCondition
°C/W -
°C/W -
Thermal resistance, junction - ambient,
R
thJA
6 cm² cooling area
3)
1)
2)
See Diagram 3 for more detailed information
See Diagram 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.2.0,2019-12-16
OptiMOS
TM
5Power-Transistor,150V
BSC0402NS
3Electricalcharacteristics
atT
j
=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
1)
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
Values
Min.
150
3.0
-
-
-
-
-
-
32
Typ.
-
3.8
0.1
10
1
7.9
8.7
1
64
Max.
-
4.6
1
100
100
9.3
10.5
1.5
-
Unit
V
V
µA
nA
mΩ
Ω
S
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=107µA
V
DS
=120V,V
GS
=0V,T
j
=25°C
V
DS
=120V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=10V,I
D
=40A
V
GS
=8V,I
D
=20A
-
|V
DS
|≥2|I
D
|R
DS(on)max
,I
D
=40A
Table5Dynamiccharacteristics
Parameter
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
2400
600
15
14
5
15
4
Max.
-
-
-
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=75V,f=1MHz
V
GS
=0V,V
DS
=75V,f=1MHz
V
GS
=0V,V
DS
=75V,f=1MHz
V
DD
=75V,V
GS
=10V,I
D
=40A,
R
G,ext
=3Ω
V
DD
=75V,V
GS
=10V,I
D
=40A,
R
G,ext
=3Ω
V
DD
=75V,V
GS
=10V,I
D
=40A,
R
G,ext
=3Ω
V
DD
=75V,V
GS
=10V,I
D
=40A,
R
G,ext
=3Ω
Table6Gatechargecharacteristics
2)
Parameter
Gate to source charge
Gate to drain charge
1)
Switching charge
Gate charge total
1)
Gate plateau voltage
Output charge
1)
Symbol
Q
gs
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
Values
Min.
-
-
-
-
-
-
Typ.
14
7.0
13.4
33
5.7
91
Max.
-
-
-
-
-
-
Unit
nC
nC
nC
nC
V
nC
Note/TestCondition
V
DD
=75V,I
D
=40A,V
GS
=0to10V
V
DD
=75V,I
D
=40A,V
GS
=0to10V
V
DD
=75V,I
D
=40A,V
GS
=0to10V
V
DD
=75V,I
D
=40A,V
GS
=0to10V
V
DD
=75V,I
D
=40A,V
GS
=0to10V
V
DS
=75V,V
GS
=0V
1)
2)
Defined by design. Not subject to production test.
See
″Gate
charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.0,2019-12-16
OptiMOS
TM
5Power-Transistor,150V
BSC0402NS
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
1)
Reverse recovery charge
1)
Symbol
I
S
I
S,pulse
V
SD
t
rr
Q
rr
Values
Min.
-
-
-
-
-
Typ.
-
-
0.86
51
60
Max.
80
320
1.2
-
-
Unit
A
A
V
ns
nC
Note/TestCondition
T
C
=25°C
T
C
=25°C
V
GS
=0V,I
F
=40A,T
j
=25°C
V
R
=75V,I
F
=40A,di
F
/dt=100A/µs
V
R
=75V,I
F
=40A,di
F
/dt=100A/µs
1)
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.0,2019-12-16
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