BD6xxx
Complementary power Darlington transistors
Features
■
■
■
.
Good h
FE
linearity
High f
T
frequency
Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
1
Applications
3
2
■
Linear and switching industrial equipment
SOT-32
Description
The devices are manufactured in planar base
island technology with monolithic Darlington
configuration.
Figure 1.
Internal schematic diagram
R1 typ.= 15 KΩ
R2 typ.= 100
Ω
Table 1.
Device summary
Marking
BD677
BD677A
BD678
BD678A
BD679
SOT-32
BD679A
BD680
BD680A
BD681
BD682
BD679A
BD680
BD680A
BD681
BD682
Rev 5
1/12
www.st.com
12
Order codes
BD677
BD677A
BD678
BD678A
BD679
Package
Packaging
Tube
January 2008
Contents
BD6xxx
Contents
1
2
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Typical characteristic (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
BD6xxx
Absolute maximum ratings
1
Table 2.
Absolute maximum ratings
Absolute maximum ratings
Value
NPN
BD677
BD677A
BD678
BD678A
60
BD679
BD679A
BD680
BD680A
80
5
4
6
0.1
40
-65 to 150
150
BD681
Symbol
Parameter
Unit
PNP
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
TOT
T
stg
T
J
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitte-base voltage (I
C
= 0)
Collector current
Collector peak current
Base current
Total dissipation at T
case
= 25°C
Storage temperature
Max. operating junction temperature
BD682
100
V
V
A
A
A
W
°C
°C
Note:
For PNP types voltage and current values are negative
3/12
Electrical characteristics
BD6xxx
2
Electrical characteristics
(T
case
= 25°C;
unless otherwise specified)
Table 3.
Symbol
I
CEO
Electrical characteristics
Parameter
Collector cut-off current
(I
B
= 0)
Collector cut-off current
(I
E
= 0)
Emitter cut-off current
(I
C
= 0)
Test conditions
V
CE
= half rated V
CEO
V
CE
= rated V
CBO
V
CE
= rated V
CBO
T
c
= 100 °C
V
EB
= 5 V
for BD677, BD677A,
BD678, BD678A
I
C
= 50 mA
2
2
mA
Min.
Typ.
Max.
0.5
0.2
mA
Unit
mA
I
CBO
I
EBO
60
V
CEO(sus)(1)
Collector-emitter
sustaining voltage (I
B
= 0)
for BD679, BD679A,
BD680, BD680A
I
C
= 50 mA
for BD681, BD682
I
C
= 50 mA
80
V
100
V
CE(sat)(1)
for BD677, BD678,
BD679, BD680, BD681,
BD682
Collector-emitter saturation I
C
= 1.5 A
I
B
= 30 mA
voltage
for BD677A, BD678A,
BD679A, BD680A
I
B
= 40 mA
I
C
= 2 A
for BD677, BD678,
BD679, BD680, BD681,
BD682
I
C
= 1.5 A
___
V
CE
= 3 V
for BD677A, BD678A,
BD679A, BD680A
V
CE
= 3 V
I
C
= 2 A
2.5
V
2.8
V
BE(1)
Base-emitter voltage
2.5
V
4/12
BD6xxx
Table 3.
Symbol
Electrical characteristics
Electrical characteristics (continued)
Parameter
Test conditions
for BD677, BD678,
BD679, BD680, BD681,
BD682
I
C
= 1.5 A_
_
V
CE
= 3 V
for BD677A, BD678A,
BD679A, BD680A
I
C
= 2 A_
_
V
CE
= 3 V
1. Pulsed duration = 300 ms, duty cycle
≥1.5%.
Min.
Typ.
Max.
Unit
h
FE(1)
DC current gain
750
Note:
For PNP types voltage e current values are negative.
5/12
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