Rev. 2.05
BSL207SP
OptiMOS
-P Small-Signal-Transistor
Feature
•
P-Channel
•
Enhancement mode
•
Super Logic Level (2.5 V rated)
•
150°C operating temperature
•
Avalanche rated
•
dv/dt rated
•
Pb-free lead plating; RoHS compliant
•
Qualified according to AEC Q101
Product Summary
V
DS
R
DS(on)
I
D
-20
41
-6
P-TSOP6-6
V
mΩ
A
4
5
6
3
2
1
P-TSOP6-6
Drain
pin 1,2,
5,6
Source
pin 4
•
Halogen free according to IEC61249221
Gate
pin 3
Type
Package
Tape and reel
Marking
BSL207SP
P-TSOP6-6
H6327:3000
pcs/r.
sPA
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
A
-6
-4.8
Pulsed drain current
T
A
=25°C
I
D puls
-24
Avalanche energy, single pulse
I
D
=-6 A ,
V
DD
=-10V,
R
GS
=25Ω
E
AS
44
mJ
Reverse diode dv/dt
I
S
=-6A,
V
DS
=-16V, di/dt=200A/µs,
T
jmax
=150°C
dv/dt
-6
kV/µs
Gate source voltage
V
GS
±12
V
Power dissipation
T
A
=25°C
P
tot
2
W
Operating and storage temperature
T
j
,
T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
ESD Class
JESD22-A114-HBM
55/150/56
Class 1a
Page 1
2013-11-06
Rev. 2.05
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
BSL207SP
Symbol
min.
R
thJS
R
thJA
-
-
-
Values
typ.
-
-
-
max.
50
230
62.5
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=-250µA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
-20
-0.6
Values
typ.
-
-0.9
max.
-
-1.2
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=-40µA
Zero gate voltage drain current
V
DS
=-20V,
V
GS
=0,
T
j
=25°C
V
DS
=-20V,
V
GS
=0,
T
j
=150°C
µA
-0.1
-10
-10
43
29
-1
-100
-100
65
41
nA
mΩ
Gate-source leakage current
V
GS
=-12V,
V
DS
=0
Drain-source on-state resistance
V
GS
=-2.5V,
I
D
=-4.9A
Drain-source on-state resistance
V
GS
=-4.5,
I
D
=-6A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t
≤
5 sec.
Page 2
2013-11-06
Rev. 2.05
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-10V,
V
GS
=-4.5V,
I
D
=-1A,
R
G
=6Ω
V
DS
≥2∗I
D
∗R
DS(on)max ,
I
D
=-4.8A
V
GS
=0,
V
DS
=-15V,
f=1MHz
BSL207SP
Symbol
Conditions
min.
7
-
-
-
-
-
-
-
Values
typ.
14
1007
410
332
9
17
42
53
max.
-
-
-
-
14
26
63
76
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0, |I
F
| = |I
D
|
V
R
=-10V, |I
F
|
=
|l
D
|,
di
F
/dt=100A/µs
Q
gs
Q
gd
Q
g
V
DD
=-10V,
I
D
=-6A
-
-
-
-
-1.7
-7.1
-13.3
-1.6
-2.6
-10.7
-20
-
nC
V
DD
=-10V,
I
D
=-6A,
V
GS
=0 to -4.5V
V
(plateau)
V
DD
=-10V,
I
D
=-6A
V
I
S
I
SM
T
A
=25°C
-
-
-
-
-
-
-
-0.9
29
12
-2.3
-24
-1.3
36
15
A
V
ns
nC
Page 3
2013-11-06
Rev. 2.05
1 Power dissipation
P
tot
=
f
(T
A
)
2.2
BSL207SP
BSL207SP
2 Drain current
I
D
=
f
(T
A
)
parameter: |V
GS
|≥ 4.5 V
-6.5
BSL207SP
W
1.8
A
-5.5
-5
1.6
-4.5
P
tot
I
D
20
40
60
80
100
120
1.4
1.2
1
0.8
0.6
-4
-3.5
-3
-2.5
-2
-1.5
0.4
0.2
0
0
-1
-0.5
°C
160
0
0
20
40
60
80
100
120
°C
160
T
A
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
-10
2
BSL207SP
4 Transient thermal impedance
Z
thJS
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
2
BSL207SP
A
=
V
D
(o
DS
n)
/
I
D
S
K/W
t
p = 130.0µs
10
1
-10
1
R
Z
thJS
1 ms
10
0
I
D
10 ms
-10
0
10
-1
D = 0.50
0.20
10
-2
0.10
0.05
DC
10
-3
-10
-1
0.02
single pulse
0.01
-10
-2 -1
-10
-10
0
-10
1
V
-10
2
10
-4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
Page 4
t
p
2013-11-06
Rev. 2.05
5 Typ. output characteristic
I
D
=
f
(V
DS
);
T
j
=25°C
parameter:
t
p
= 80 µs
60
A
Vgs = -3.5V
Vgs = -3V
BSL207SP
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
0.065
Ω
Vgs = -2V
Vgs = -2.2V
50
45
0.055
0.05
0.045
0.04
0.035
Vgs = -2.5V
-
I
D
40
35
30
25
20
15
10
5
0
0
1
2
3
Vgs = -4V
Vgs = -4.5V
Vgs = -6V
Vgs = -10V
Vgs = -2.5V
Vgs= - 3V
Vgs = - 4V
Vgs = - 4.5V
Vgs= - 5V
Vgs = - 6V
Vgs= - 8V
R
DS(on)
Vgs = -2V
0.03
0.025
0.02
Vgs = - 10V
0.015
4
5
6
7
8
V
10
0.01
0
4
8
12
16
20
24
A
30
-
V
DS
-
I
D
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
); |V
DS
|≥ 2 x |I
D
| x
R
DS(on)max
parameter:
t
p
= 80 µs
22
A
8 Typ. forward transconductance
g
fs
= f(I
D
);
T
j
=25°C
parameter:
t
p = 80 µs
20
18
16
S
-
I
D
14
12
10
g
fs
V
12
8
8
6
4
2
0
0
0.5
1
1.5
2
3
0
0
4
8
12
16
A
4
24
-
V
GS
-
I
D
Page 5
2013-11-06
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