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BZT52C30W PA

CategoryZener diode   
File Size336KB,3 Pages
ManufacturerCHINA BASE INTERNATIONAL
Download Datasheet Parametric Compare View All

BZT52C30W PA Parametric

Parameter NameAttribute value
Diode configurationDetached
Stable voltage value (nominal value)30V
Stable voltage value (range)28V~32V
Accuracy-
power500mW
Reverse current (Ir)100nA@21V
Impedance(Zzt)80Ω
BZT52C…W
Features
SILICON PLANAR ZENER DIODES
PINNING
PIN
1
2
1
• Ideally suited for automated assembly processes
• Total power dissipation: max. 500 mW
DESCRIPTION
Cathode
Anode
2
Top View
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings
(T
a
= 25 C)
O
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
P
tot
T
J
T
Stg
Value
500
150
- 65 to + 150
Unit
mW
O
C
C
O
Characteristics at
T
a
= 25 C
O
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at I
F
= 10 mA
Symbol
R
thA
V
F
Max.
340
0.9
Unit
O
C/W
V
Page 1 of 3
6/3/2011

BZT52C30W PA Related Products

BZT52C30W PA BZT52C39W PD BZT52C36W PC BZT52C33W PB
Description Diode configuration: independent voltage regulation value (nominal value): 39V voltage regulation value (range): 37V~41V power: 500mW reverse current (Ir): 100nA@27.3V impedance (Zzt): 130Ω PD (PD means silk screen ) Diode configuration: independent voltage stabilization value (nominal value): 36V voltage stabilization value (range): 34V~38V power: 500mW reverse current (Ir): 100nA@25.2V impedance (Zzt): 90Ω PC (PC means silk screen )
Diode configuration Detached Detached Detached Detached
Stable voltage value (nominal value) 30V 39V 36V 33V
Stable voltage value (range) 28V~32V 37V~41V 34V~38V 31V~35V
power 500mW 500mW 500mW 500mW
Reverse current (Ir) 100nA@21V 100nA@27.3V 100nA@25.2V 100nA@23.1V
Impedance(Zzt) 80Ω 130Ω 90Ω 80Ω
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