PESD5V0 L1
BS F
1.
DFN0603
Datasheet
Bi-directional ESD Protection Diode in DFN0603 Package
Features
Capacitance: 15pF(typ.)
Reverse Working Voltage: 5V
IEC 61000-4-2 (ESD Air): ±25KV
IEC 61000-4-2 (ESD Contact): ±
25KV
IEC 61000-4-5 (Lightning 8/20µs): 7A
2.
Pin Description
3.
Applications
Smart Phone and Tablet PC
TV and Set Top Box
Wearable Devices
PDA
4.
Schematic Diagram
1
2
5.
Order Information
Type
PESD 5V0L1BSF
Package
DFN0603
Size (mm)
0.62x0.32x0.32
Delivery Form
7” T&R
Delivery Quantity
15,000
6.
Limiting Values(T
A
= 25 ° unless otherwise specified)
C,
Symbol
V
ESD
P
PP
I
PPM
T
A
T
stg
Parameter
Electrostatic Discharge Voltage
Peak Pulse Power
Rated Peak Pulse Current
Ambient Temperature Range
Storage Temperature Range
Conditions
IEC 61000-4-2; Contact Discharge
IEC 61000-4-2; Air Discharge
t
P
= 8/20 µs
t
P
= 8/20 µs
-
-
Min
-
-
-
-
-55
-55
Max
±
25
±
25
70
7
125
150
Unit
kV
kV
W
A
℃
℃
7.
Electrical Characteristics(T
A
= 25 ° unless otherwise specified)
C,
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Parameter
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
Conditions
T
A
= 25 °
C
I
R
= 1mA; T
A
= 25 °
C
V
RWM
= 5V; T
A
= 25 °
C
I
PP
=1A, t
P
=8/20µs
I
PP
=7A, t
P
=8/20µs
V
R
= 0V, f = 1 MHz
Min
-
5.6
-
-
-
-
Typ.
-
6.5
-
-
-
15
Max
5.0
8.4
0.1
6
10
18
Unit
V
V
µA
V
V
pF
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PESD5V0 L1
BS F
8.
DFN0603
Datasheet
Bi-directional ESD Protection Diode in DFN0603 Package
Typical Characteristics
Fig.1 Pulse Waveform-ESD (IEC61000-4-2)
Fig.2 Transmission Line Pulse (TLP)
Fig.3 V-I Characteristics for Bidirectional Diode
Fig.4 IV Curve
Fig.5 Clamping Voltage at IEC61000-4-2
+8kV Pulse Waveform
Fig.6 Clamping Voltage at IEC61000-4-2
-8kV Pulse Waveform
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PESD5V0 L1
BS F
DFN0603
Datasheet
Bi-directional ESD Protection Diode in DFN0603 Package
9.
Package Outline Dimensions
DFN0603 Package Outline
Dimensions In Millimeters
Symbol
Min
A
D
E
D1
E1
L
0.28
0.29
0.59
0.22
0.15
0.16
Typical
0.30
0.32
0.62
0.25
0.18
0.19
Max
0.32
0.35
0.65
0.28
0.21
0.22
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PESD5V0 L1
BS F
DFN0603
Datasheet
Bi-directional ESD Protection Diode in DFN0603 Package
10.
Soldering Parameters
FIG.5:
Reflow condition
tp
T
P
Ramp-up
T
L
Temperature
Critical Zone
T
L
to T
P
t
L
Ramp-down
Preheat
T
S(max)
T
S(min)
t
s
25
time to peak temperatue
(t 25℃ to peak)
Time
Reflow Condition
-Temperature Min (T
s(min)
)
Pre-heat
-Temperature Max(T
s(max)
)
-Time (Min to Max) (ts)
Average ramp up rate (Liquid us Temp (T
L
) to peak)
T
s(max)
to T
L
- Ramp-up Rate
-Temperature(T
L
)(Liquid us)
Reflow
-Temperature(t
L
)
Peak Temp (T
p
)
Time within 5° of actual Peak Temp (t
p
)
C
Ramp-down Rate
xTime 25° to Peak Temp (T
P
)
C
Do not exceed
Pb-Free Assembly
+150°
C
+200°
C
60-180 secs.
3°
C/sec. Max
3°
C/sec. Max
+217°
C
60-150 secs.
+260(+0/-5)°
C
30 secs. Max
6°
C/sec. Max
8 min. Max
+260°
C
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PESD5V0 L1
BS F
DFN0603
Datasheet
Bi-directional ESD Protection Diode in DFN0603 Package
11.
Contact Information
Online product information is available at
www.wdsemi.com
Buy our products or get free samples,for further information and requests,
Please e-mail us at:sales1@wdsemi.com
12.
Copyrights & Disclaimer
Information furnished in this document is believed to be accurate and reliable. However, Jiangsu Weida
Semiconductor Co., Ltd assumes no responsibility for the consequences of use without consideration for
such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when an
agreement is signed, Jiangsu Weida Semiconductor Co., Ltd complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu Weida
Semiconductor Co., Ltd assumes no responsibility for any infringement of other rights of third parties
which may result from the use of such products and information.
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