BSS138
Plastic-Encapsulate MOSFETS
V
(BR)DSS
50V
R
DS(on)
MAX
3.5Ω@ 10V
6.0Ω@4.5V
I
D
0.22A
SOT-23
3
1.GATE
2.SOURCE
ORDERING INFORMATION
Type No.
BSS138
Marking
SS/J1
Package Code
SOT-23
V
DSS
I
D
P
D
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
Se
Absolute Maximum Ratings
V
GSS
T
A
=25
o
C unless otherwise noted
mi
co
Ratings
50
20
(Note 1)
nd
Units
V
V
A
W
mW/C
Applications
Interfacing, switching (50V, 100mA)
Drain Current
– Continuous
O
– Pulsed
CR
Maximum Power Dissipation
(Note 1)
Derate Above 25C
T
J
, T
STG
T
L
Operating and Storage Junction Temperature Range
uc
0.22
0.88
0.36
2.8
−55 to +150
300
C
C
(Note 1)
3) Drive circuits can be simple.
4) Parallel use is easy.
5) ESD protected 2KV HBM
Equivalent Circuit
Thermal Characteristics
MI
Maximum Lead Temperature for Soldering
Purposes 1/16” from Case for 10 Seconds
,
JS
R
θJA
Thermal Resistance, Junction-to-Ambient
350
to
C/W
Quantity
3000 units
Features
1) Low on-resistance.
2) Fast sw itching speed.
1
3.DRAIN
2
Package Marking and Ordering Information
Device Marking
SS
Device
BSS138
Reel Size
7’’
Tape width
8mm
r
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第１／５页
BSS138
Plastic-Encapsulate MOSFETS
T
A
= 25°C unless otherwise noted
Symbol
BV
DSS
Parameter
Drain–Source Breakdown Voltage
Breakdow n Voltage Temperature
Coefficient
Test Conditions
V
GS
= 0 V,
I
D
= 250
A
Min
50
Typ
Max
Units
V
Off Characteristics
∆BV
DS S
∆T
J
I
D
= 250
A,Referenced
to 25C
V
DS
= 50 V,
V
DS
= 30 V,
V
GS
= 0 V
V
GS
= 0 V
V
DS
= 0 V
I
D
= 1 mA
0.8
72
0.5
100
mV/C
A
nA
nA
V
mV/C
Ω
A
S
I
DSS
Zero Gate Voltage Drain Current
I
GSS
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
C
iss
C
oss
C
rss
R
G
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Gate–Body Leakage.
(N ote 2)
V
GS
=
20
V,
V
DS
= V
GS
,
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
uc
0.2
0. 12
2)
I
D
= 1 mA,Referenced to 25C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
= 10 V,
V
DS
= 10V,
V
DS
= 25 V,
f = 1.0 MHz
I
D
= 0.22 A
V
DS
= 5 V
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
I
D
= 0.22 A
I
D
= 0.22 A
V
GS
= 0 V,
co
Dynamic Characteristics
nd
to
1.3
–2
27
13
6
9
2.5
9
20
7
1.7
0.1
0.4
0.8
On Characteristics
r
100
1.6
3.5
6.0
5
18
36
14
2.4
0.22
1.4
pF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
A
V
Switching Characteristics
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
mi
V
GS
= 15 mV,
V
DD
= 30 V,
V
GS
= 10 V,
V
DS
= 25 V,
V
GS
= 10 V
f = 1.0 MHz
I
D
= 0.29 A,
R
GEN
= 6 Ω
Se
I
D
= 0.22 A,
Drain–Source Diode Characteristics and Maximum Ratings
JS
MI
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V,
I
S
= 0.44 A
(Note
Voltage
CR
O
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第２／５页
BSS138
Plastic-Encapsulate MOSFETS
Typical Characteristics
1
V
GS
= 10V
6.0V
4.5V
3.4
3.
5V
3.0 V
0.8
3
2.
V
GS
= 2.5V
0.6
2.5 V
62.
1.
2
81.
3.0V
3.5V
4.0V
0.4
0.2
2.0V
r
6.0V
0
0.2
4.5V
0
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
0.6
to
0.4
0.6
4
10V
0.8
1
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
4.1
2
1.
81.
61.
41.
2
1
0.
-50
80.
6
-25
0
25
50
75
I
D
= 2
20mA
V
GS
=
nd
T
A
= 125
o
C
T
A
= 25
o
C
0
2
4
6
1
V
GS
= 0V
T
A
= 125
o
C
25
o
C
0
0.2
0.4
0.6
0.8
uc
I
D
= 1 10mA
10V
3.5
2.9
2.3
Se
100
125
150
mi
co
1.7
1.1
0.5
8
10
T
J
, JUNCTION TEMPERATURE
(
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.
60.
50.
40.
30.
20.
V
DS
=
10V
CR
T A
O
= -55
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
25 o
C
MI
125
o
C
0.1
0.01
-55
o
C
0.001
JS
1
0
0.0001
1.5
2
2.5
3
3.5
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.5
1
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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第３／５页
BSS138
Plastic-Encapsulate MOSFETS
Typical Characteristics
10
I
D
= 220mA
8
V
DS
= 8V
30V
60
40
20
C
RSS
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Q
g
, GATE CHARGE (nC)
0
25 V
100
f = 1 MHz
V
GS
= 0 V
80
6
4
2
C
ISS
0
10
20
to
30
1
10
r
40
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
OSS
Figure 7. Gate Charge Characteristics.
10
5
4
3
Figure 8. Capacitance Characteristics.
nd
0.01
0.1
t
1
, TIME (sec)
uc
P(pk)
10
1
R
DS(ON)
LIMIT
0.1
V
GS
= 10V
SINGLE PULSE
R
θJA
= 350
o
C/W
T
A
= 25
o
C
0.1
1
10
100s
1ms
10ms
100ms
1s
DC
SINGLE PULSE
R
θJA
= 350°C/W
T
A
= 25°C
0.01
0.001
mi
1
co
2
0
0.001
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Se
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
D = 0.5
0.2
CR
1
O
R
θJA
(t) = r(t) * R
θJA
R
θ JA
= 350
o
C/W
MI
0.05
0.02
0.1
0.1
0.01
0.01
JS
SINGLE PULSE
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
t
1
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
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第４／５页
BSS138
Plastic-Encapsulate MOSFETS
PACKAGE OUTLINE
Plastic surface mounted package
A
SOT-23
SOT-23
Dim
E
Min
2.70
1.10
0.90
0.30
Max
A
B
C
D
E
K
B
uc
0.35
1.80
0.02
0.05
2.20
D
G
H
J
nd
G
H
J
K
co
mi
Unit: mm
C
All Dimensions in mm
0.95
0.95
CR
JS
PACKAGE
Device
BSS138
MI
0.90
0.80
INFORMATION
Package
SOT-23
Shipping
3000 pcs / Tape & Reel
O
Se
SOLDERING FOOTPRINT
2.00
to
1.50
1.10
0.50
0.48
2.00
0.10
0.15
2.60
第５／５页
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3.10
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