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3135GN-280LV

Description
RF Power Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size141KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

3135GN-280LV Overview

RF Power Field-Effect Transistor

3135GN-280LV Parametric

Parameter NameAttribute value
Objectid8097481938
Reach Compliance Codecompliant
ECCN codeEAR99
3135GN-280LV
280 Watts • 50 Volts • 200
s, 20%
S-Band Radar 3100 - 3500 MHz
GENERAL DESCRIPTION
The 3135GN-280LV is an internally matched, COMMON SOURCE,
class AB, GaN on SiC HEMT transistor capable of providing over 13 dB
gain, 280 Watts of pulsed RF output power at 200
S pulse width, 20%
duty factor across the 3100 to 3500 MHz band. This hermetically sealed
transistor is utilizes gold metallization and eutectic attach to provide
highest reliability and superior ruggedness.
Market Application – High Power S-Band Pulsed Radar
CASE OUTLINE
55-KP
Common Source
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25C
Maximum Voltage and Current
Drain-Source Voltage (V
DSS
)
Gate-Source Voltage (V
GS
)
616 W
125 V
-8 to +0 V
Maximum Temperatures
-55 to +125 C
Storage Temperature (T
STG
)
Operating Junction Temperature +250
C
ELECTRICAL CHARACTERISTICS @ 25C
Symbol
Pout
Gp
Characteristics
Output Power
Power Gain
Drain Efficiency
Droop
Load Mismatch Tolerance
Thermal Resistance
1
Test Conditions
1
Pin=14.1W, Freq=3100,3300,3500 MHz
Pin=14.1W, Freq=3100,3300,3500 MHz
Pin=14.1W, Freq=3100,3300,3500 MHz
Pin=14.1W, Freq=3100,3300,3500 MHz
Pin=14.1W, Freq=3100 MHz
Pulse Width=200
S, Duty=20%
Min
280
13
50
Typ
330
13.7
58
0.2
Max
Units
W
dB
%
D
Dr
VSWR-T
Өjc
0.5
3:1
.39
dB
°C/W
Bias Condition: Vdd=+50V, Idq=100mA constant current (Vgs= -2.0 ~ -4.5V typical)
FUNCTIONAL CHARACTERISTICS @ 25C
I
D(Off)
I
G(Off)
BV
DSS
Drain leakage current
Gate leakage current
Drain-Source breakdown
voltage
V
gS
= -8V, V
D
= 50V
V
gS
= -8V, V
D
= 0V
V
gs
=-8V, I
D
= 36mA
125
36
6
mA
mA
V
For the most current data, consult MICROSEMI’s website:
www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at
(408) 986-8031
for the latest information
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