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BZQ55-D15T/R7

Description
Zener Diode, 15V V(Z), 20%, 0.5W
CategoryDiscrete semiconductor    diode   
File Size72KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BZQ55-D15T/R7 Overview

Zener Diode, 15V V(Z), 20%, 0.5W

BZQ55-D15T/R7 Parametric

Parameter NameAttribute value
Objectid1125449808
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance30 Ω
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation0.5 W
Nominal reference voltage15 V
surface mountYES
Maximum voltage tolerance20%
Working test current5 mA

BZQ55-D15T/R7 Preview

Download Datasheet
DATA SHEET
BZQ55-C2V4 SERIES
SURFACE MOUNT ZENER DIODES
VOLTAGE
2.4 to 47 Volts
POWER
500 mWatts
QUADRO-MELF
Unit : inch (mm)
FEATURES
• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
.0
67
(1
.7
)
MECHANICAL DATA
• Case: Molded Glass QUADRO-MELF
• Terminals: Solderable per MIL-STD-202E, Method 208
• Polarity: See Diagram Below
• Approx. Weight: 0.03 grams
• Mounting Position: Any
• Packing information
T/R - 2.5K per 7" plastic Reel
.020(0.5)
.012(0.3)
.146(3.7)
.130(3.3)
.020(0.5)
.012(0.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Power Dissipation at Tamb = 25
Junction Temperature
Storage Temperature Range
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
O
Symbol
Value
500
175
-65 to +175
Units
mW
O
C
P
TOT
T
J
T
S
C
C
O
Parameter
Thermal Resi stance Juncti on to Ambi ent Ai r
Forward Voltage at IF = 100mA
Symbol
Min.
--
--
Typ.
Max.
0.3
1
Uni ts
K/mW
V
RthA
VF
--
--
Vali d provi ded that leads at a di stance of 8mm from case are kept at ambi ent temperature.
STAD-JAN.27.2004
.063(1.6)
.055(1.4)DIA.
PAGE . 1
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