VO4254, VO4256
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototriac Output, High dV/dt, Low Input Current
FEATURES
A 1
C 2
NC 3
i179035_3
21842-1
6 MT2
5 NC
4 MT1
D E
V
• High static dV/dt 5 kV/μs
• High input sensitivity 1.6 mA, 2 mA, and 3 mA
• 400 V and 600 V blocking voltage
• 300 mA on-state current
• Isolation test voltage 5300 V
RMS
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION
The VO4254 and VO4256 phototriac consists of a GaAs
IRLED optically coupled to a photosensitive non-zero
crossing TRIAC packaged in a DIP-6 package.
High input sensitivity is achieved by using an emitter
follower phototransistor and a cascaded SCR predriver
resulting in an LED trigger current of 1.6 mA for bin D, 2 mA
for bin H, and 3 mA for bin M.
The new non zero phototriac family use a proprietary dV/dt
clamp resulting in a static dV/dt of greater than 5 kV/μs.
The VO4254 and VO4256 phototriac isolates low-voltage
logic from 120 V
AC
, 240 V
AC
, and 380 V
AC
lines to control
resistive, inductive, or capacitive loads including motors,
solenoids, high current thyristors or TRIAC and relays.
APPLICATIONS
• Solid-state relays
• Industrial controls
• Office equipment
• Consumer appliances
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• cUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-5 (VDE 0884) available with option 1
• FIMKO: FI25250
ORDERING INFORMATION
DIP-6
Option 6
V
O
4
2
5
#
X
-
X
0
0
#
T
TAPE
AND
REEL
PART NUMBER
PACKAGE OPTION
7.62 mm
Option 7
10.16 mm
> 0.7 mm
AGENCY
CERTIFIED/PACKAGE
UL, cUL, FIMKO
DIP-6
DIP-6, 400 mil, option 6
SMD-6, option 7
UL, cUL, FIMKO, VDE
DIP-6
1.6
VO4254D
VO4254D-X006
1.6
-
V
DRM
400
TRIGGER CURRENT, I
FT
(mA)
2
VO4254H
VO4254H-X006
2
-
3
VO4254M
VO4254M-X006
3
-
1.6
VO4256D
VO4256D-X006
1.6
VO4256D-X001
V
DRM
600
2
VO4256H
VO4256H-X006
2
-
3
VO4256M
VO4256M-X006
3
-
VO4254D-X007T VO4254H-X007T VO4254M-X007T VO4256D-X007T VO4256H-X007T VO4256M-X007T
Rev. 1.7, 13-Apr-12
Document Number: 84798
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VO4254, VO4256
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Forward current
Power dissipation
Derate from 25 °C
OUTPUT
Peak off-state voltage
RMS on-state current
Power dissipation
Derate from 25 °C
COUPLER
Isolation test voltage (between
emitter and detector, climate per
DIN 500414, part 2, Nov. 74)
Storage temperature range
Ambient temperature range
Soldering temperature
(2)
max.
10 s dip soldering
0.5 mm from case bottom
t=1s
V
ISO
T
stg
T
amb
T
sld
5300
- 55 to + 150
- 55 to + 100
260
V
RMS
°C
°C
°C
VO4254D/H/M
VO4256D/H/M
V
DRM
V
DRM
I
TM
P
diss
400
600
300
500
6.6
V
V
mA
mW
mW/°C
V
R
I
F
P
diss
6
60
100
1.33
V
mA
mW
mW/°C
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
350
300
I
L
- Load Current (mA)
250
I
F
= 3 mA to 10 mA
200
150
100
50
0
- 40 - 20
0
20
40
60
80
100
19623
T
amb
- Temperature (°C)
Fig. 1 - Recommended Operating Condition
Rev. 1.7, 13-Apr-12
Document Number: 84798
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VO4254, VO4256
www.vishay.com
Vishay Semiconductors
SYMBOL
P
diss
P
diss
T
jmax.
T
jmax.
JEB
JEC
JDB
JDC
JED
CA
VALUE
100
500
125
125
150
139
78
103
496
3563
UNIT
mW
mW
°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
19996
THERMAL CHARACTERISTICS
PARAMETER
LED power dissipation
Output power dissipation
Maximum LED junction temperature
Maximum output die junction temperature
Thermal resistance, junction emitter to board
Thermal resistance, junction emitter to case
Thermal resistance, junction detector to
board
Thermal resistance, junction detector to
case
Thermal resistance, junction emitter to
junction detector
Thermal resistance, case to ambient
T
A
θ
CA
T
C
θ
DC
T
JD
θ
DE
Package
θ
EC
T
JE
θ
DB
T
B
θ
BA
θ
EB
°C/W
T
A
Note
• The thermal characteristics table above were measured at 25 °C and the thermal model is represented in the thermal network below. Each
resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal
resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation
of the thermal model, please reference Vishay's Thermal Characteristics of Optocouplers application note.
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Reverse current
Input capacitance
OUTPUT
Repetitive peak off-state voltage
Off-state current
On-state voltage
On-current
Critical rate of rise of off-state
voltage
COUPLER
VO4254D
VO4254H
LED trigger current,
current required to latch output
V
D
= 3 V
VO4254M
VO4256D
VO4256H
VO4256M
Capacitance (input to output)
f = 1 MHz, V
IO
= 0 V
I
FT
I
FT
I
FT
I
FT
I
FT
I
FT
C
IO
0.8
1.6
2
3
1.6
2
3
mA
mA
mA
mA
mA
mA
pF
I
DRM
= 100 μA
V
D
= V
DRM
I
T
= 300 mA
PF = 1, V
T(RMS)
= 1.7 V
V
D
= 0.67 V
DRM
, T
J
= 25 °C
VO4254D/H/M
VO4256D/H/M
V
DRM
V
DRM
I
DRM
V
TM
I
TM
dV/dt
cr
5000
400
600
100
3
300
V
V
μA
V
mA
V/μs
I
F
= 10 mA
V
R
= 6 V
V
F
= 0 V, f = 1 MHz
V
F
I
R
C
I
1.2
0.1
40
1.4
10
V
μA
pF
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Rev. 1.7, 13-Apr-12
Document Number: 84798
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VO4254, VO4256
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
MIN.
TYP.
55/100/21
2
175
V
IOTM
V
IORM
P
SO
I
SI
T
SI
7
7
8000
890
500
250
175
399
V
V
mW
mA
°C
mm
mm
MAX.
UNIT
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification (according to IEC68 part 1)
Pollution degree (DIN VDE 0109)
Comparative tracking index per DIN IEC112/VDE 0303 part 1,
group IIIa per DIN VDE 6110 175 399
V
IOTM
V
IORM
P
SO
I
SI
T
SI
Creepage distance
Clearance distance
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1.5
1000
1.3
I
DRM
- Leakage Current (nA)
100
V
F
(V)
1.1
0 °C
25 °C
50 °C
10
0.9
I
DRM
at 630 V
1
- 60 - 40 - 20
0
20
40
60
80 100
0.7
0.1
19660
1.0
10.0
100.0
19682
I
F
(mA)
T
A
- Ambient Temperature (°C)
Fig. 2 - Diode Forward Voltage vs. Forward Current
Fig. 4 - Leakage Current vs. Ambient Temperature
42
40
1000
I
TM
- On-State Current (mA)
V
R
(V)
38
36
100
0 °C
10
85 °C
1
0
1
2
25 °C
34
I
R
= 10 µA
32
- 60 - 40 - 20
19662
I
F
= 2 mA
3
0
20
40
60
80 100
19683
Temperature (ºC)
V
TM
- On-State Voltage (V)
Fig. 3 - Diode Reverse Voltage vs. Temperature
Fig. 5 - On-State Current vs. On-State Voltage
Rev. 1.7, 13-Apr-12
Document Number: 84798
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VO4254, VO4256
www.vishay.com
Vishay Semiconductors
80
1.4
85 °C
1.2
Normalized I
H
at 25 °C
Output Leakage current (pA)
70
60
50
40
30
20
10
0
- 10
0
200
400
600
800
20014
Normalized I
H
1.0
0.8
0.6
0.4
0.2
0.0
- 60 - 40 - 20
25 °C
0 °C
0
20
40
60
80 100
19684
Voltage (V)
Temperature (ºC)
Fig. 9 - Normalized I
H
vs. Temperature
Fig. 6 - Output Off Current (Leakage) vs. Voltage
1.8
10
I
FT
- Trigger Current (mA)
1.6
1.4
8
Normalized I
FT
1.2
1.0
0.8
0.6
0.4
0.2
0.0
- 60 - 40 - 20
0
20
Normalized I
FT
at 25 ºC
40
60
80 100
6
85 ºC
100 ºC
4
2
- 40 ºC
25 ºC
10
20
30
40
50
60
70
0
20015
19666
Temperature (ºC)
Trigger Pulse Width (µs)
Fig. 10 - I
FT
vs. LED Pulse Width
Fig. 7 - Normalized Trigger Input Current vs. Temperature
3.5
3.0
2.5
I
FT
(mA)
2.0
1.5
1.0
0.5
0.0
10
100
1000
20013
Turn-On Time (µs)
Fig. 8 - I
FT
vs. Turn-On Time (μs)
Rev. 1.7, 13-Apr-12
Document Number: 84798
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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