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SMBT5087

Description
PNP Silicon Transistor
CategoryDiscrete semiconductor    The transistor   
File Size67KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

SMBT5087 Overview

PNP Silicon Transistor

SMBT5087 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)250
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.33 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
SMBT5087
PNP Silicon Transistor
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30Hz and 15kHz
3
Type
SMBT5087
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
T
S
= 71 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
240
Unit
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1





2
1
VPS05161
Marking
s2Q
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
T
j
T
stg
Value
50
50
3
50
330
150
-65 ... 150
Unit
V
mA
mW
°C
Nov-30-2001
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