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MA4AGSW1_13

Description
SPST Reflective AlGaAs PIN Diode Switch RoHS Compliant
File Size284KB,8 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet View All

MA4AGSW1_13 Overview

SPST Reflective AlGaAs PIN Diode Switch RoHS Compliant

MA4AGSW1
SPST Reflective AlGaAs PIN Diode Switch
RoHS Compliant
FEATURES
M/A-COM Products
Ultra Broad Bandwidth: 50 MHz to 50 GHz
Functional Bandwidth : 50 MHz to 70 GHz
0.3 dB Insertion Loss,
46 dB Isolation at 50 GHz
Low Current consumption.
-5V for low loss state
+10mA for Isolation state
M/A-COM’s unique AlGaAs hetero-junction
anode technology.
Silicon Nitride Passivation
Polymer Scratch protection
DESCRIPTION
M/A-COM Tech’s MA4AGSW1 is an Aluminum-
Gallium-Arsenide, single pole, single throw (SPST),
PIN diode switch. The switch features enhanced Al-
GaAs anodes which are formed using M/A-COM
Tech’s patented hetero-junction technology. This
technology produces a switch with less loss than
conventional AlGaAs processes. As much as a 0.3
dB reduction in insertion loss can be realized at
50GHz. The fabrication process is designed for high
device uniformity and extremely low parasitics. The
diodes themselves exhibit low series resistance, low
capacitance, and fast switching speed. They are fully
passivated with silicon nitride and have an additional
polymer layer for scratch protection. The protective
coating prevents damage to the diode junction and
anode air-bridges during handling and assembly. Off
chip bias circuitry is required.
Yellow areas indicate bond pads
J1
J2
APPLICATIONS
The high electron mobility of AlGaAs and the low
capacitance of the PIN diodes makes this switch
ideal for fast switching, high frequency, multi-throw
switch designs. These versatile AlGaAs PIN
switches can be used in a variety of microwave
applications such as switching arrays for radar
systems, radiometers, test equipment and other
multi-assembly components.
Absolute Maximum Ratings @ T
AMB
= +25°C
Parameter
Operating Temperature
Storage Temperature
Incident C.W. RF Power
Breakdown Voltage
Bias Current
Assembly Temperature
Junction Temperature
Maximum Rating
-55°C to +125°C
-55°C to +150°C
+30dBm CW
25V
± 25mA
+300°C < 10 sec
+175°C
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
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