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WOO5G

Description
1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size90KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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WOO5G Overview

1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

W005G, W01G, W02G, W04G, W06G, W08G, W10G
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
~
+
~
+
~
• Typical I
R
less than 0.1 μA
• High case dielectric strength
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
e4
~
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
Case Style WOG
TYPICAL APPLICATIONS
WOG
1.5 A
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 1.0 A
T
J
max.
Diode variations
General purpose use in AC/DC bridge full wave rectification
for power supply, adapter, charger, lighting ballaster on
consumers, and home appliances applications.
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
50 A
5 μA
1.0 V
150 °C
Quad
MECHANICAL DATA
Case:
WOG
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals:
Silver plated
J-STD-002 and JESD22-B102
Polarity:
As marked on body
leads,
solderable
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at
0.375" (9.5 mm) lead length at T
A
= 25 °C
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
SYMBOL W005G
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
50
35
50
W01G
100
70
100
W02G
200
140
200
W04G
400
280
400
1.5
50
10
- 55 to + 150
W06G
600
420
600
W08G
800
560
800
W10G
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage per diode
Maximum DC reverse current at rated
DC blocking voltage per diode
Typical junction capacitance per diode
TEST CONDITIONS
I
F
= 1.0 A
T
A
= 25 °C
T
A
= 125 °C
4.0 V, 1 MHz
SYMBOL
V
F
I
R
C
J
VALUES
1.0
5.0
500
14
UNIT
V
μA
pF
Revision: 08-Jul-13
Document Number: 88769
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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Description 1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

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