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SMBJ50C

Description
600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size20KB,4 Pages
ManufacturerEIC [EIC discrete Semiconductors]
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SMBJ50C Overview

600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

SMBJ50C Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Maximum breakdown voltage111 V
Minimum breakdown voltage100 V
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipAVALANCHE
structureSINGLE
Diode component materialsSILICON
Maximum power consumption limit1.5 W
polarityBIDIRECTIONAL
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
shutdown voltage90 V
Maximum non-repetitive peak speed power600 W
SMBJ 5.0C - 170CA
V
BR
: 6.8 - 200 Volts
P
PK
: 600 Watts
FEATURES :
* 600W surge capability at 1ms
* Excellent clamping capability
* Low inductance
* Response Time Typically < 1ns
* Typical I
R
less then 1µA above 10V
BIDIRECTIONAL TRANSIENT
VOLTAGE SUPPRESSOR
SMB (DO-214AA)
1.1
?
0.3
0.15
5.4
4.8
0.15
2.0
?
0.1
3.6
?
0.15
2.3
?
0.2
0.22
?
0.07
MECHANICAL DATA
* Case : SMB Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Mounting position : Any
* Weight : 0.109 gram
Dimensions in millimeter
MAXIMUM RATINGS
Rating at Ta = 25
?
C ambient temperature unless otherwise specified.
Rating
Peak Pulse Power Dissipation on 10/1000µs (1)
Symbol
P
PPM
Value
Minimum 600
Units
Watts
waveform (Notes 1, 2, Fig. 4)
Peak Pulse Current on 10/1000µs
I
PPM
waveform (Note 1, Fig. 3)
Operating Junction and Storage Temperature Range
Note :
(1) Non-repetitive Current pulse, per Fig. 3 and derated above Ta = 25
?
C per Fig. 1
(2) Mounted on 5.0mm
2
(0.013mm) land areas.
See Table
Amps
T
J,
T
STG
- 55 to + 150
?
C
UPDATE : MAY 10, 2000

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