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SMBJ45A

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
CategoryDiscrete semiconductor    diode   
File Size112KB,4 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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SMBJ45A Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

SMBJ45A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionR-PDSO-C2
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Maximum breakdown voltage55.3 V
Minimum breakdown voltage50 V
Breakdown voltage nominal value53.75 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage45 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
SMBJ 5.0 - 170A
V
BR
: 6.8 - 200 Volts
P
PK
: 600 Watts
FEATURES :
* 600W surge capability at 1ms
* Excellent clamping capability
* Low inductance
* Response Time Typically < 1ns
* Typical I
R
less then 1µA above 10V
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
SMB (DO-214AA)
1.1
?
0.3
0.15
5.4
4.8
0.15
2.0
?
0.1
3.6
?
0.15
2.3
?
0.2
0.22
?
0.07
MECHANICAL DATA
* Case : SMB Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.108 gram
Dimensions in millimeter
MAXIMUM RATINGS
Rating at Ta = 25
?
C ambient temperature unless otherwise specified.
Rating
Peak Pulse Power Dissipation on 10/1000µs (1)
waveform (Notes 1, 2, Fig. 3)
Peak Pulse Current on 10/1000µs
waveform (Note 1, Fig. 5)
Peak forward Surge Current
8.3 ms single half sine-wave superimposed on
rated load ( JEDEC Method )(Notes 2, 3)
Maximum Instantaneous Forward Voltage at 50A (Note 3,4 )
Operating Junction and Storage Temperature Range
Symbol
Value
Units
P
PPM
Minimum 600
Watts
I
PPM
See Table
Amps
V
FM
T
J,
T
STG
See Note 3, 4
- 65 to + 150
Volts
?C
Note :
(1) Non-repetitive Current pulse, per Fig. 5 and derated above Ta = 25
?
C per Fig. 1
(2) Mounted on 5.0mm2 (0.013mm thick) land areas.
(3) Measured on 8.3ms. Single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum.
(4) V
F
=3.5V for SMBJ5.0 thru SMBJ90 devices and V
F
=5V for SMBJ100 thru SMBJ170 devices.
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