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BSM150GAL120DN2E3166

Description
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)
CategoryDiscrete semiconductor    The transistor   
File Size82KB,5 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BSM150GAL120DN2E3166 Overview

IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)

BSM150GAL120DN2E3166 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-XUFM-X7
Reach Compliance Codeunknow
Other featuresFAST
Shell connectionISOLATED
Maximum collector current (IC)210 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X7
Number of components1
Number of terminals7
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsGENERAL PURPOSE SWITCHING
Transistor component materialsSILICON
Nominal off time (toff)670 ns
Nominal on time (ton)300 ns
Base Number Matches1
BSM150GAL120DN2E3166
IGBT Power Module
• Single switch with chopper diode
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
V
CE
I
C
Package
Ordering Code
BSM150GAL120DN2E3166
1200V 210A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
HALF BRIDGE GAL 2 C67076-A2112-A70
Symbol
Values
1200
1200
Unit
V
V
CE
V
CGR
V
GE
I
C
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
± 20
A
210
150
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current,
t
p
= 1 ms
I
Cpuls
420
300
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
P
tot
1250
W
+ 150
-55 ... + 150
0.1
0.25
0.125
4000
20
11
F
55 / 150 / 56
sec
Vac
mm
K/W
°C
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJCD
R
THJCDC
V
is
-
-
-
-
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