datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > Passive components> capacitor> CCDF223Z2A07503A
PDF
Preview

CCDF223Z2A07503A

Description
Ceramic Capacitor, Ceramic, 100V, 80% +Tol, 20% -Tol, Y5V, -82/+22ppm/Cel TC, 0.022uF,
CategoryPassive components    capacitor   
File Size279KB，7 Pages
ManufacturerArco Electronics
Download Datasheet Parametric View All

CCDF223Z2A07503A Overview

Ceramic Capacitor, Ceramic, 100V, 80% +Tol, 20% -Tol, Y5V, -82/+22ppm/Cel TC, 0.022uF,

CCDF223Z2A07503A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid767360840
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
capacitance0.022 µF
Capacitor typeCERAMIC CAPACITOR
dielectric materialsCERAMIC
high7.5 mm
length7 mm
negative tolerance20%
Number of terminals2
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
Package formRadial
method of packingAmmo Pack
positive tolerance80%
Rated (DC) voltage (URdc)100 V
seriesCCD
Temperature characteristic codeY5V
Temperature Coefficient-82/+22ppm/Cel ppm/°C
Terminal pitch5 mm

CCDF223Z2A07503A Preview

ARCO ELECTRONICS, LLC.
Ordering code
CCD
NPO
1
2
1.Type
TYPE
CCD:
C
eramic capacitor
CCE:
Epoxy coating
CERAMIC DISC CAPACITOR
2K
5
10
6
6.Size Code
0
7
Code
05
10
12
103
3
M
4
7
8
1
9
DIA(mm)
5
10
12
B
10
2.Temperature Characteristic
Code
TEMP. COEFF.
(PPM/°C)
Code
CAP. Change (%)
Code
005
010
221
Code
B
C
D
F
G
Code
1C
1E
1H
2A
2B
PF
5P
10P
220P
CAP. TOL.
±0.1PF
±0.25PF
±0.5PF
±1%
±2%
CAP. TOL.
16V
25V
50V
100V
250V
NPO (CH)
0±60
B
±10
SL
+350~-1000
7.Pitch
E
+22,-56
Code
222
103
104
Code
J
K
M
Z
P
Code
2H
1K
2K
3K
6K
F
+22,-82
PF
2200P
10000P
100000P
CAP. TOL.
±5%
±10%
±20%
+80-20%
+100-0%
CAP. TOL.
500V
1000V
2000V
3000V
6000V
Code
2
5
6
Code
3
5
7
1
3 max.(500V)
4max.(HI-VOLT)
3.Rated Capacitance
Pitch (mm)
2.5±0.8
5±0.8
6.35±0.8
Code
7
0
Pitch (mm)
7.52±0.8
9.5±0.8
8.Lead Length
Lead length (mm) Code Lead length(mm)
3±0.8
0
10±0.8
5±0.8
1
25±3
7±0.8
2
3
4
4.Capacitance Tolerance
9.Lead Style
1max.(50V)
5 max.
5 max.
5.Rated Voltage
23 min
23 min
L
F
10.Packing
Code
A
R
B
Type
Ammo Pack Taping
Reel Pack Taping
BULK
50/100V Series
W.V.
(DC)
NPO
(CH)
0.5~47
47 ~68
75~100
120~150
180~200
220~270
300~330
470
TEMP.Char./Capacitance range(PF)
SL
33~150
180~220
250~330
390
470~560
680~820
B
(Y5E)(Y5P)
100~2200
3300
3900
4700~6800
7500~10000
E
(Z5U)
1000~5000
5600~6800
7500~10000
20000~22000
F
(Z5V)
3300~10000
12000~22000
DIA
(mm)
5±1
6±1
7±1
8±1
9±1
10±1
12±1
14±1
50V/100V
500V Series
W.V.
(DC)
TEMP.Char./Capacitance range(PF)
NPO
(CH)
0.5~50
47 ~56
65~82
91~100
100~120
150~180
200~220
SL
10~68
82~100
120~150
180~220
390~470
680~820
900~1000
B
(Y5E)(Y5P)
100~680
820~1200
1500~1800
2000~2700
3000~3300
3900~5200
5600~6800
8200~10000
E
(Z5U)
1000~2200
2200~3300
3900~5000
5600~6800
8200~10000
12000~15000
18000~22000
F
(Z5V)
2000~2200
2200~4700
5000~6800
8200~10000
DIA
(mm)
5±1
6±1
7±1
8±1
9±1
10±1
12±1
14±1
16±1
500V
15000~22000
27000~47000
100000
Semi-Conductive Series
W.V.
(DC)
12V/16V
TEMP.Char./Capacitance range(PF)
B
(Y5P)
E
(Y5U)
100000
1000
47000
F
(Y5V)
100000
220000
10000~22000
100000
DIA
(mm)
6±1
8±1
3.5±1
5±1
6±1
6.5±1
7±1
8±1
10±1
3.5±1
4.5±1
5±1
6±1
8±1
10±1
12.5±1
25V
10000
22000
33000
47000
68000
100000
100000
50V/100V
10000
15000
22000
33000~47000
100000
10000
22000
33000~47000
100000
220000
10000~22000
47000
100000
Taping Dimensions
P
2
P
P
2
P
d
H
W
1
d
W
H
W
1
W
P
1
F
P
0
D
0
P
1
F
P
o
D
o
Formed Leads and Taping
Symbol
Dimensions
P
P
0
P
1
P
2
Units : mm(inch)
Remarks
Less than 2 mm of cumulative error per 20 pitches
12.7±1
(
0.500±0.039
)
12.7±0.3
(
0.500±0.012
)
3
.85±0.5
(
0.152±0.020
)
6
.35±1
(
0.250±0.039
)
F
W
W
1
H
ØD
0
Ød
5
±0.8
(
0.197±0.031
)
18±0.5
(
0.709-0.020
)
9
±0.5
(
0.354-0.020
)
20+1.5-1.0
(
0.787+0.059-0.039
)
4
±2
(
0.157±0.008
)
0.6+0.06-0.05(
0.024+0.002-0.002
)
AMMO-PACK
340max
REEL-PACK
cassette
55max
30 1mm
240max
Reel
370mm max
RELIABILITY DATA
No
ITEM
.
1
Operating
CLASS I
-25°C~+85°C
CLASS II
CLASS III
Measuring Condition
B
:-
25°C~+85°C
F: -25°C~+85°C
(Y5V)
E&F
:
-25°C~+85°C
Retain the sample for 30 minutes at the temperature
specified below in the sequence listed in the table. Then
measure the capacitance in each step after thermal
equilibrium at each temperature is reached.
Step1
Step2
Step3
Step4
Step5
Room Operating
Room
Operating Room
Temp Temp(min)
Temp
Temp(min) Temp
25±2°C - 25±3°C 25±2°C
85±2°C
25±2°C
+10±2°C
Note that step fand2 do not apply for the SL characteristics.
Temperature Range
CH:0±60ppm/°C
Temperature
B:
±10%
SL:+350-1000ppm/°C
E:+22%-56%
2 Characteristics
F:+22%-82%
+22%
-82%
3 Capacitance
Within the specified tolerance
C≥30pF;Q≥1000
C<30pF;Q≥400+20·
c
B&E:tan
δ≤0.025
F: tan
δ≤0.05
F: tan
δ≤0.05
4 Q or Dissipation
Factor (tan
δ)
(
C is nominal capacitance)
5 Withstanding
Voltage
Insulation
6 Resistance
Shall be measured 25±2°C normal temperature
at the frequency and voltage
ClassI:1MHz±20%, 1±0.2Vrms
ClassII:1KHz±10%, 1±0.2Vrms
ClassIII:1KHz±20%, 0.5±0.05Vrms
No defects
Applied: Rated voltage
·3 (class I)
Rated voltage
·2.5 (class II)
Rated voltage
·2 (class III)
Duration:1 to 5 sec.
The charge/discharge current is less than 50mA.
More than 10GΩ or More than 1GΩ or
Apply rated voltage for
More than 10GΩ
200Ω·F, whichever is 20Ω·F, whichever is
25±2°C and 70% R.H. max.
less
less
1 minute at
16Vdc product: Measurement voltage is 25Vdc
Fix the capacitor, apply the tensile stress listed below
in the terminal extraction direction until the
designated value is reached. Then retain the capacitor
for 10±0.1 seconds as is.
Nominal wire diameter
0.5 mm 0.6 mm
Tensile stress
5N
10N
7
Pull Test
(Tensile stress)
Termination not to be broken or loosened
8 Solderability of
Leads
At least three-fourths of the immersed surface in the
Solder temperature:
230±5°C
circumference direction is covered with new solder.
Dipping: 3±0.5
sec
. (Flux shall be used)
±2.5% or ±0.25pF
The lead wire immersed in the melted solder
B : ±5%
F : ±30%
(Whichever is
1.5mm to 2mm from the capacitor body.
E : ±15%
(Y5V)
ΔC
greater)
CLASSI,II CLASSIII
F : ±20%
9
Resistance
to Solder
Solder temperature
350±10°C
260±5°C
Withstandi
No defects
Heat
Duration
3±0.5sec 5±0.5sec
ng voltage
Exterior
No abnormalities
±2.5% or ±0.25pF
(Whichever is
greater)
ΔC
B : ±5%
E : ±15%
F : ±20%
F
: ±30%
(Y5V)
The measurements after testing must be taken after
leaving the sample for 12 to 24 hours under normal
temperature and humidity conditions.
Fix the capacitor to the supporting jig in the same
manner and under the same conditions as(10).
Perform the five cycles according to the four heat
C≥30pF: Q≥1000
Q/D.F.
10 Thermal
shock
C<30pF:Q≥400+20
·
C
c is nominal capacitance
B&E:tan
δ≤0.025
F : tan
δ≤0.05
F : tan
δ≤0.05
(Y5V)
More than 10GΩ or
More than 10GΩ or
20Ω·F,whichever is less 20Ω·F,whichever is less
treatments listed in the following table.
Step 1
Step 2
Step 3
Step 4
I.R.
Withstandi
ng voltage
More than 10GΩ
No defects
No abnormalities
±5% or ±0.5pF
(Whichever is
greater)
C≥30pF: Q≥350
10pF<C<30pF:
Q≥275+5/2·C
C≤10pF: Q≥200+10·C
Exterior
ΔC
11
Moisture
resistance
Q/D.F.
Operating Room
Operating
Room
Temp(min) Temp
Temp(max) Temp
30±3
15
30±3
15
The measurements after testing must be taken after
leaving the sample for 12 to 24 hours under normal
temperature and humidity conditions.
B : ±10%
E : ±20%
F : ±30%
F
: ±30%
(Y5V)
Temperature:
40±2°C
Humidity 90 to 95% R.H.
Duration:500+24-0 Hrs.
The measurements after testing must be taken after
leaving the sample for 1 to 2 hours under normal
temperature and humidity conditions.
*
Perform a heat treatment at 40±2°C for 1
B&E:tan
δ≤0.05
F : tan
δ≤0.075
F : tan
δ≤0.075
(Y5V)
More than 1GΩ or
More than 500MΩ or
20Ω·F,whichever is less 10Ω·F,whichever is less
(steady
state)
I.R.
Withstandi
ng voltage
More than 1GΩ
No defects
No abnormalities
±5% or ±0.5pF
(Whichever is
greater)
C≥30pF: Q≥350
10pF<C<30pF:
Q≥275+5/2·C
Exterior
ΔC
12
High
Q/D.F.
hours. Remove and let sit for 1 to 2 hours at
normal temperature and humidity conditions.
Perform the initial measuremen
t
B : ±10%
E : ±20%
F : ±30%
F
: ±30%
(Y5V)
Applied Voltage:
Rated voltage·2(CLASSI,II)
Rated voltage·1.25(CLASSIII)
Temperature:
85±2°C
Duration:1000+48-0 Hrs.
Temperat
ure
loading
The charge/discharge current is less than 10mA
C≤10pF: Q≥200+10·C
The measurements after testing must be taken after
More than 1GΩ or
More than 500MΩ or
leaving the sample for 12 to 24 hours under normal
I.R.
More than 1GΩ
20Ω·F,whichever is less 10Ω·F,whichever is less
temperature and humidity conditions.
Withstandi
No defects
*
Perform a heat treatment at 85±2°C for 1
ng voltage
B&E:tan
δ≤0.05
F : tan
δ≤0.075
F : tan
δ≤0.075
(Y5V)
Exterior
No abnormalities
hours. Remove and let sit for 12 to 24 hours at
normal temperature and humidity conditions.
Perform the initial measuremen
t
1KV Series
W.V.
(DC)
TEMP.Char./Capacitance range(PF)
NPO
(CH)
1~10
12 ~33
39~50
56~68
79~90
100~120
150~180
200~220
SL
30~56
68~100
120~150
180~220
270~330
350~390
470~560
680~820
B
(Y5E)(Y5P)
100~470
500~1000
1500~1800
2000~2200
2700~3300
3900~4700
5000~6800
E
(Z5U)
1000~1200
1500~2200
2700~3300
3900~10000
8200~10000
12000
22000
F
(Z5V)
DIA
(mm)
5±1
6±1
7±1
8±1
9±1
10±1
11±1
12±1
14±1
20±1
1KV
4700
5000~10000
22000
22000
47000
2KV Series(Epoxy Coating)
TEMP.Char./Capacitance range(PF)
W.V.
(DC)
NPO
SL
B
E
(CH)
1~20
22 ~30
33~39
47~50
56~68
75~82
90~100
110~120
150
15~56
68~100
120~150
180
200~220
270~300
330
390
(Y5E)(Y5P)
100~470
560~1000
1200
1500
1800~2200
2700
3000~3300
3900
(Z5U)
1000~1200
1500~2200
2700~3300
3500~3900
4700~6800
8200~10000
F
(Z5V)
3300~3900
4700~5000
5600~6800
8200
10000
12000
DIA
(mm)
5±1
6±1
7±1
8±1
9±1
10±1
11±1
12±1
13±1
2KV
4700~5600
14±1
3KV Series(Epoxy Coating)
TEMP.Char./Capacitance range(PF)
W.V.
(DC)
NPO
SL
B
E
(CH)
1~18
20 ~30
33~39
47~56
62~68
75~82
90~100
110~120
150
15~47
50~68
82~100
120
150~180
200~220
270
300~330
(Y5E)(Y5P)
100~470
680~820
1000
1200
1500
1800
2000~2200
2700~3300
(Z5U)
1000~1200
1500
1800~2000
2200~2700
3000~6800
F
(Z5V)
1800~2200
2700~3300
3900
4700~5600
6800
8200
10000
DIA
(mm)
6±1
7±1
8±1
9±1
10±1
11±1
12±1
13±1
14±1
3KV
10000
6KV,10KV Series(Epoxy Coating)
TEMP.Char./Capacitance range(PF)
W.V.
(DC)
SL
B
5~22
27~39
47~68
82
100~120
150
(Y5E)(Y5P)
100~330
390~500
560~680
820
1000
1500
E
(Z5U)
1000
1500~2200
3300
DIA
(mm)
6±1.5
7±1.5
8±1.5
9±1.5
10±1.5
11±1.5
12±1.5
13±1.5
14±1.5
15±1.5
7±1.5
7±1.5
7±1.5
8±1.5
10±1.5
12±1.5
6KV
10KV
100~120
150~180
200~220
270~330
470~560
680
Temperature Dependency of Capacitance (Approx. Values)
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

Recommended Resources

Design of voice recording and playback circuit module composed of HY560

555 linear voltage/frequency converter circuit (2)

555 voltage source circuit for driving neon lamp

555 multi-speed electronic metronome circuit

LM39U (alarm and automatic control equipment) monolithic temperature control circuit

6L6A class tube push-pull amplifier

Does anyone know the definition of SIM card legs and feet?
I want to make a microcontroller that can communicate remotely with a mobile phone...
chuanshuo898 Embedded System
MPLAB X IDE Learning Compilation Failed for PIC XC8 Compiler
I saw MPLAB X IDE programming examples for PIC XC8 compiler on the Internet [url=https://simple-circuit.com/pic-microcontroller-mplab-xc8-lcd/]https://simple-circuit.com/pic-microcontroller-mplab-xc8-...
wang5825 Microchip MCU
DSP28335 programming steps
[size=5]About the initial application of DSP28335: Program design steps: [/size] [size=5] When developing DSP, it is necessary to configure its underlying hardware and peripherals accordingly. Only af...
Jacktang Microcontroller MCU
\Electronic Design Competition Training Materials\
[hide]Obstacle and Angle Measurement Car[/hide]Electronic Design Competition Training Materials...
myjoyce 51mcu
Four major external devices of PLC
Programming equipment: Simple programmers are mostly mnemonics, and some can also use graphic programming (such as the EX programmable controller of Toshiba Corporation in Japan). More complex ones ar...
eeleader Industrial Control Electronics
Xiao Meige and you will learn in depth about FPGA based on the Serial Port Hunter virtual oscilloscope
[color=#000000][size=18.018px] Hello everyone, long time no see. Some time ago, Xiao Meige has been organizing and optimizing data in the company. I am very busy every day, so I haven't been to the fo...
小梅哥 FPGA/CPLD
Shortcut:   00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components

  1. Q25FS5550014512
  2. G9EA-1-DC60
  3. 54122-410-52-1150
  4. MAX6483BL30AD1
  5. MMA02040D1871CB100
  6. TML-132-01-H-S-RA
  7. M55342M01B392ETTN
  8. BLU2512ER-2150-BB25Q
  9. BAV21WS
  10. BZM55-C75
  11. A2541WV-31P-C1085D216-G15
  12. C4201WR-F-2x5P-V0-G15

Popular Articles

  1. After the popularization of autonomous driving, Audi Grandsphere attempts to create a contactless first-class cabin
  2. Concept and classification of speech synthesis (TTS)
  3. Teledyne launches new Geospatial service, a comprehensive solution for ocean and land
  4. TI's integrated transformer module technology helps increase driving time for hybrid and electric vehicles
  5. STM8 study notes---ADC multi-channel sampling
  6. DSCC lowers panel price forecast again, but manufacturers are not worried about full-year profits
  7. Counterpoint: Indian smartphone market may hit new highs
  8. LG Electronics and Tinno Mobile Sign Global LTE Communications Standard Patent License Agreement
  9. Structure and principle of 5050 megohmmeter
  10. The import value of integrated circuits in Shanghai in the first eight months was nearly 187.4 billion yuan, down 0.5% year-on-year

Technical ResourceMore

  1. Switching Power Supply Example Design.pdf
  2. A brief introduction to Sunplus MCU compilation tools
  3. [Follow Me Season 3 Episode 4] Task Code
  4. Follow Me Season 3 Episode 4 Code
  5. Altium Designer Universal Component Library 7.rar
  6. Mitsubishi FX1S full English version information
  7. Intelligent Connected Vehicle Electronic and Electrical Architecture Industry Technology Roadmap (245 pages)
  8. 3D component library: DB9-M
  9. STM32 Development Guide (Library Functions + Registers)
  10. The C Standard Library \"Bible\" PDF (Chinese, scanned version)

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 1066  311  2062  1680  483  22  7  42  34  10 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号