CCDSL221B2A06633RLF datasheet, PDF

Datasheet> All Categories > Passive components> capacitor> CCDSL221B2A06633RLF

CCDSL221B2A06633RLF: DescriptionCeramic Capacitor, Ceramic, 100V, 0.0455% +Tol, 0.0455% -Tol, SL, -1000/+350ppm/Cel TC, 0.00022uF,; CategoryPassive components capacitor; File Size279KB，7 Pages; ManufacturerArco Electronics; Environmental Compliance

Download Datasheet Parametric View All

CCDSL221B2A06633RLF Overview

Ceramic Capacitor, Ceramic, 100V, 0.0455% +Tol, 0.0455% -Tol, SL, -1000/+350ppm/Cel TC, 0.00022uF,

CCDSL221B2A06633RLF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	768010845
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
capacitance	0.00022 µF
Capacitor type	CERAMIC CAPACITOR
dielectric materials	CERAMIC
high	6.5 mm
length	6 mm
negative tolerance	0.0455%
Number of terminals	2
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
Package form	Radial
method of packing	TR
positive tolerance	0.0455%
Rated (DC) voltage (URdc)	100 V
series	CCD
Temperature characteristic code	SL
Temperature Coefficient	-1000/+350ppm/Cel ppm/°C
Terminal pitch	6.35 mm

CCDSL221B2A06633RLF Preview

ARCO ELECTRONICS, LLC.

Ordering code

CCD

NPO

1.Type

TYPE

CCD:

eramic capacitor

CCE:

Epoxy coating

CERAMIC DISC CAPACITOR

6.Size Code

Code

103

DIA(mm)

2.Temperature Characteristic

Code

TEMP. COEFF.

(PPM/°C)

Code

CAP. Change (%)

Code

005

010

221

Code

10P

220P

CAP. TOL.

±0.1PF

±0.25PF

±0.5PF

±1%

±2%

CAP. TOL.

16V

25V

50V

100V

250V

NPO (CH)

0±60

±10

+350~-1000

7.Pitch

+22,-56

Code

222

103

104

Code

+22,-82

2200P

10000P

100000P

CAP. TOL.

±5%

±10%

±20%

+80-20%

+100-0%

CAP. TOL.

500V

1000V

2000V

3000V

6000V

Code

3 max.(500V)

4max.(HI-VOLT)

3.Rated Capacitance

Pitch (mm)

2.5±0.8

5±0.8

6.35±0.8

Code

Pitch (mm)

7.52±0.8

9.5±0.8

8.Lead Length

Lead length (mm) Code Lead length(mm)

3±0.8

10±0.8

5±0.8

25±3

7±0.8

4.Capacitance Tolerance

9.Lead Style

1max.(50V)

5 max.

5.Rated Voltage

23 min

10.Packing

Code

Type

Ammo Pack Taping

Reel Pack Taping

BULK

50/100V Series

W.V.

(DC)

NPO

(CH)

0.5~47

47 ~68

75~100

120~150

180~200

220~270

300~330

470

TEMP.Char./Capacitance range(PF)

33~150

180~220

250~330

390

470~560

680~820

(Y5E)(Y5P)

100~2200

3300

3900

4700~6800

7500~10000

(Z5U)

1000~5000

5600~6800

7500~10000

20000~22000

(Z5V)

3300~10000

12000~22000

DIA

(mm)

5±1

6±1

7±1

8±1

9±1

10±1

12±1

14±1

50V/100V

500V Series

W.V.

(DC)

TEMP.Char./Capacitance range(PF)

NPO

(CH)

0.5~50

47 ~56

65~82

91~100

100~120

150~180

200~220

10~68

82~100

120~150

180~220

390~470

680~820

900~1000

(Y5E)(Y5P)

100~680

820~1200

1500~1800

2000~2700

3000~3300

3900~5200

5600~6800

8200~10000

(Z5U)

1000~2200

2200~3300

3900~5000

5600~6800

8200~10000

12000~15000

18000~22000

(Z5V)

2000~2200

2200~4700

5000~6800

8200~10000

DIA

(mm)

5±1

6±1

7±1

8±1

9±1

10±1

12±1

14±1

16±1

500V

15000~22000

27000~47000

100000

Semi-Conductive Series

W.V.

(DC)

12V/16V

TEMP.Char./Capacitance range(PF)

(Y5P)

(Y5U)

100000

1000

47000

(Y5V)

100000

220000

10000~22000

100000

DIA

(mm)

6±1

8±1

3.5±1

5±1

6±1

6.5±1

7±1

8±1

10±1

3.5±1

4.5±1

5±1

6±1

8±1

10±1

12.5±1

25V

10000

22000

33000

47000

68000

100000

50V/100V

10000

15000

22000

33000~47000

100000

10000

22000

33000~47000

100000

220000

10000~22000

47000

100000

Taping Dimensions

Formed Leads and Taping

Symbol

Dimensions

Units : mm(inch)

Remarks

Less than 2 mm of cumulative error per 20 pitches

12.7±1

(

0.500±0.039

)

12.7±0.3

(

0.500±0.012

)

.85±0.5

(

0.152±0.020

)

.35±1

(

0.250±0.039

)

ØD

Ød

±0.8

(

0.197±0.031

)

18±0.5

(

0.709-0.020

)

±0.5

(

0.354-0.020

)

20+1.5-1.0

(

0.787+0.059-0.039

)

±2

(

0.157±0.008

)

0.6+0.06-0.05(

0.024+0.002-0.002

)

AMMO-PACK

340max

REEL-PACK

cassette

55max

30 1mm

240max

Reel

370mm max

RELIABILITY DATA

ITEM

Operating

CLASS I

-25°C~+85°C

CLASS II

CLASS III

Measuring Condition

25°C~+85°C

F: -25°C~+85°C

(Y5V)

E&F

-25°C~+85°C

Retain the sample for 30 minutes at the temperature

specified below in the sequence listed in the table. Then

measure the capacitance in each step after thermal

equilibrium at each temperature is reached.

Step1

Step2

Step3

Step4

Step5

Room Operating

Room

Operating Room

Temp Temp(min)

Temp

Temp(min) Temp

25±2°C - 25±3°C 25±2°C

85±2°C

25±2°C

+10±2°C

Note that step fand2 do not apply for the SL characteristics.

Temperature Range

CH:0±60ppm/°C

Temperature

±10%

SL:+350-1000ppm/°C

E:+22%-56%

2 Characteristics

F:+22%-82%

+22%

-82%

3 Capacitance

Within the specified tolerance

C≥30pF;Q≥1000

C<30pF;Q≥400+20·

B&E:tan

δ≤0.025

F: tan

δ≤0.05

F: tan

δ≤0.05

4 Q or Dissipation

Factor (tan

δ)

(

C is nominal capacitance)

5 Withstanding

Voltage

Insulation

6 Resistance

Shall be measured 25±2°C normal temperature

at the frequency and voltage

ClassI:1MHz±20%, 1±0.2Vrms

ClassII:1KHz±10%, 1±0.2Vrms

ClassIII:1KHz±20%, 0.5±0.05Vrms

No defects

Applied: Rated voltage

·3 (class I)

Rated voltage

·2.5 (class II)

Rated voltage

·2 (class III)

Duration:1 to 5 sec.

The charge/discharge current is less than 50mA.

More than 10GΩ or More than 1GΩ or

Apply rated voltage for

More than 10GΩ

200Ω·F, whichever is 20Ω·F, whichever is

25±2°C and 70% R.H. max.

less

1 minute at

16Vdc product: Measurement voltage is 25Vdc

Fix the capacitor, apply the tensile stress listed below

in the terminal extraction direction until the

designated value is reached. Then retain the capacitor

for 10±0.1 seconds as is.

Nominal wire diameter

0.5 mm 0.6 mm

Tensile stress

10N

Pull Test

(Tensile stress)

Termination not to be broken or loosened

8 Solderability of

Leads

At least three-fourths of the immersed surface in the

Solder temperature:

230±5°C

circumference direction is covered with new solder.

Dipping: 3±0.5

sec

. (Flux shall be used)

±2.5% or ±0.25pF

The lead wire immersed in the melted solder

B : ±5%

F : ±30%

(Whichever is

1.5mm to 2mm from the capacitor body.

E : ±15%

(Y5V)

ΔC

greater)

CLASSI,II CLASSIII

F : ±20%

Resistance

to Solder

Solder temperature

350±10°C

260±5°C

Withstandi

No defects

Heat

Duration

3±0.5sec 5±0.5sec

ng voltage

Exterior

No abnormalities

±2.5% or ±0.25pF

(Whichever is

greater)

ΔC

B : ±5%

E : ±15%

F : ±20%

: ±30%

(Y5V)

The measurements after testing must be taken after

leaving the sample for 12 to 24 hours under normal

temperature and humidity conditions.

Fix the capacitor to the supporting jig in the same

manner and under the same conditions as(10).

Perform the five cycles according to the four heat

C≥30pF: Q≥1000

Q/D.F.

10 Thermal

shock

C<30pF:Q≥400+20

c is nominal capacitance

B&E:tan

δ≤0.025

F : tan

δ≤0.05

F : tan

δ≤0.05

(Y5V)

More than 10GΩ or

20Ω·F,whichever is less 20Ω·F,whichever is less

treatments listed in the following table.

Step 1

Step 2

Step 3

Step 4

I.R.

Withstandi

ng voltage

More than 10GΩ

No defects

No abnormalities

±5% or ±0.5pF

(Whichever is

greater)

C≥30pF: Q≥350

10pF<C<30pF:

Q≥275+5/2·C

C≤10pF: Q≥200+10·C

Exterior

ΔC

Moisture

resistance

Q/D.F.

Operating Room

Operating

Room

Temp(min) Temp

Temp(max) Temp

30±3

The measurements after testing must be taken after

leaving the sample for 12 to 24 hours under normal

temperature and humidity conditions.

B : ±10%

E : ±20%

F : ±30%

: ±30%

(Y5V)

Temperature:

40±2°C

Humidity 90 to 95% R.H.

Duration:500+24-0 Hrs.

The measurements after testing must be taken after

leaving the sample for 1 to 2 hours under normal

temperature and humidity conditions.

Perform a heat treatment at 40±2°C for 1

B&E:tan

δ≤0.05

F : tan

δ≤0.075

F : tan

δ≤0.075

(Y5V)

More than 1GΩ or

More than 500MΩ or

20Ω·F,whichever is less 10Ω·F,whichever is less

(steady

state)

I.R.

Withstandi

ng voltage

More than 1GΩ

No defects

No abnormalities

±5% or ±0.5pF

(Whichever is

greater)

C≥30pF: Q≥350

10pF<C<30pF:

Q≥275+5/2·C

Exterior

ΔC

High

Q/D.F.

hours. Remove and let sit for 1 to 2 hours at

normal temperature and humidity conditions.

Perform the initial measuremen

B : ±10%

E : ±20%

F : ±30%

: ±30%

(Y5V)

Applied Voltage:

Rated voltage·2(CLASSI,II)

Rated voltage·1.25(CLASSIII)

Temperature:

85±2°C

Duration:1000+48-0 Hrs.

Temperat

ure

The charge/discharge current is less than 10mA

C≤10pF: Q≥200+10·C

The measurements after testing must be taken after

More than 1GΩ or

More than 500MΩ or

leaving the sample for 12 to 24 hours under normal

I.R.

More than 1GΩ

20Ω·F,whichever is less 10Ω·F,whichever is less

temperature and humidity conditions.

Withstandi

No defects

Perform a heat treatment at 85±2°C for 1

ng voltage

B&E:tan

δ≤0.05

F : tan

δ≤0.075

F : tan

δ≤0.075

(Y5V)

Exterior

No abnormalities

hours. Remove and let sit for 12 to 24 hours at

normal temperature and humidity conditions.

Perform the initial measuremen

1KV Series

W.V.

(DC)

TEMP.Char./Capacitance range(PF)

NPO

(CH)

1~10

12 ~33

39~50

56~68

79~90

100~120

150~180

200~220

30~56

68~100

120~150

180~220

270~330

350~390

470~560

680~820

(Y5E)(Y5P)

100~470

500~1000

1500~1800

2000~2200

2700~3300

3900~4700

5000~6800

(Z5U)

1000~1200

1500~2200

2700~3300

3900~10000

8200~10000

12000

22000

(Z5V)

DIA

(mm)

5±1

6±1

7±1

8±1

9±1

10±1

11±1

12±1

14±1

20±1

1KV

4700

5000~10000

22000

47000

2KV Series(Epoxy Coating)

TEMP.Char./Capacitance range(PF)

W.V.

(DC)

NPO

(CH)

1~20

22 ~30

33~39

47~50

56~68

75~82

90~100

110~120

150

15~56

68~100

120~150

180

200~220

270~300

330

390

(Y5E)(Y5P)

100~470

560~1000

1200

1500

1800~2200

2700

3000~3300

3900

(Z5U)

1000~1200

1500~2200

2700~3300

3500~3900

4700~6800

8200~10000

(Z5V)

3300~3900

4700~5000

5600~6800

8200

10000

12000

DIA

(mm)

5±1

6±1

7±1

8±1

9±1

10±1

11±1

12±1

13±1

2KV

4700~5600

14±1

3KV Series(Epoxy Coating)

TEMP.Char./Capacitance range(PF)

W.V.

(DC)

NPO

(CH)

1~18

20 ~30

33~39

47~56

62~68

75~82

90~100

110~120

150

15~47

50~68

82~100

120

150~180

200~220

270

300~330

(Y5E)(Y5P)

100~470

680~820

1000

1200

1500

1800

2000~2200

2700~3300

(Z5U)

1000~1200

1500

1800~2000

2200~2700

3000~6800

(Z5V)

1800~2200

2700~3300

3900

4700~5600

6800

8200

10000

DIA

(mm)

6±1

7±1

8±1

9±1

10±1

11±1

12±1

13±1

14±1

3KV

10000

6KV,10KV Series(Epoxy Coating)

TEMP.Char./Capacitance range(PF)

W.V.

(DC)

5~22

27~39

47~68

100~120

150

(Y5E)(Y5P)

100~330

390~500

560~680

820

1000

1500

(Z5U)

1000

1500~2200

3300

DIA

(mm)

6±1.5

7±1.5

8±1.5

9±1.5

10±1.5

11±1.5

12±1.5

13±1.5

14±1.5

15±1.5

7±1.5

8±1.5

10±1.5

12±1.5

6KV

10KV

100~120

150~180

200~220

270~330

470~560

680

Temperature Dependency of Capacitance (Approx. Values)

More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

Recommended Resources

Forward and reverse control circuit of micro DC motor a

Password electronic lock control circuit

Control end manual or electrical signal control diagram (b)

AD824 single supply positive and negative supply limited output low power FET input operational amplifier

TDA2020 power amplifier circuit

Long-distance remote control switch composed of S%26P27A/S%26P278

ccs_v3.3_sr8_3.7.77.exe: I am using a DEC F28335 board. When writing programs into the flash, I need the file ccs_v3.3_sr8_3.7.77.exe, but it is not in the accompanying folder, nor can I find it on the TI website. If you have...; coabbb Microcontroller MCU

I would like to ask about the STM32USB composite device (compositedevice) problem.: I want to use STM32 USB to implement MASS STORAGE and VIRTUAL COM. How can I merge the following initialization functions to initialize both applications at the same time?DEVICE_PROP Device_Property =...; zhangbochao5 stm32/stm8

After downloading the program, I run it directly but cannot enter the main program?: When using 430f1611, the program is downloaded but cannot be run?...; summer Microcontroller MCU

Can anyone compare the TI M3 with other systems using the M3 core?: After reading the wonderful conversation between dlyltm and jkhu about STM32 and TI M3, I suddenly felt that the experts in the forum should come out and make more comments, comparing TI M3 with those...; 天地一孤砂 Microcontroller MCU

The concept and principle of shielding: Shielding is to isolate two spatial regions with metal to control the induction and radiation of electric fields, magnetic fields and electromagnetic waves from one region to another. Specifically, it...; fly RF/Wirelessly

Microcontroller learning notes, teach you how to learn in three steps!: As an electronic technology practitioner, have you learned single-chip microcomputers? Can you use single-chip microcomputers? I think you must have learned them, but you may not be able to use them. ...; XYD漫漫 stm32/stm8

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components