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BSP50

Description
1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size51KB,8 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BSP50 Overview

1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BSP50 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)2 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)2000
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
surface mountYES
Nominal transition frequency (fT)200 MHz
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
BSP50; BSP51; BSP52
NPN Darlington transistors
Product specification
Supersedes data of 1997 Apr 22
1999 Apr 23

BSP50 Related Products

BSP50 BSP51 BSP52
Description 1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified? conform to conform to conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow unknow
Maximum collector current (IC) 2 A 0.5 A 2 A
Configuration DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 2000 2000 2000
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 1.5 W 1.5 W 1.5 W
surface mount YES YES YES
Nominal transition frequency (fT) 200 MHz - 200 MHz
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