SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
BSS138
S
ISSUE 3 – MARCH 1996
PARTMARKING DETAIL
D
– SS
7
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
V
DS
SYMBOL
VALUE
50
200
800
±
20
360
-55 to +150
SOT23
UNIT
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
50
0.5
1.5
100
0.5
5
100
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
10
10
15
25
120
50
25
8
3.5
MIN.
MAX. UNIT CONDITIONS.
V
V
nA
µA
µA
nA
Ω
mS
pF
pF
pF
ns
ns
ns
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
V
DD
≈30V,
I
D
=280mA
V
DS
=25V, V
GS
=0V, f=1MHz
I
D
=0.25mA, V
GS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=50V, V
GS
=0
V
DS
=50V, V
GS
=0V, T=125°C
(2)
V
DS
=20V, V
GS
=0
V
GS
=5V,I
D
=200mA
V
DS
=25V,I
D
=200mA
3 - 72
BSS138
TYPICAL CHARACTERISTICS
V
GS
=2.5V 3V 3.5V
BSS138
14
1.0
0.8
V
DS
=10V
80µs Pulsed Test
TYPICAL CHARACTERISTICS
4V
1.0
100
V
GS
=10V
5V
4.5V
4V
12
10
V
DD
0.8
I
D
=200mA
0V
=2
3.5V
0.6
8
6
0.4
0.2
0
0
1
4
2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
V
30
V
50
0.6
3V
10
0.4
5V
7V
10V
0.2
2.5V
I
DS
-Drain Source Current (A)
80µs Pulsed Test
R
DS(on) -
Drain Source
On Resistance (Ohms)
2V
0
1
2
3
4
5
0.01
0.1
1.0
V
GS
-Gate-Source Voltage (Volts)
V
DS
-Drain Source Voltage (Volts)
I
D
-Drain Current (Amperes)
Q-Charge (nC)
I
DS
- Drain Source Current (A)
0
1.0
2
3
4
5
V
GS
- Gate Source Voltage (V)
Saturation Characteristics
Typical On Resistance vs.
Drain Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
100µA
1mA
Typical Gate Charge vs.
Gate-Source Voltage
Typical Transfer Characteristics
500
500
80µs Pulsed Test
V
GS
=0
400
400
300
V
DS
=25V
80µs Pulsed Test
300
V
DS
=25V
80µs Pulsed Test
200
200
V
SD
- Source Drain Voltage (V)
100
100
0
0
2
4
6
8
10
0
10mA
100mA
1A
g
fs
-Forward Transconductance (mS)
I
D
-Drain Current (Amperes)
V
GS
-Gate Source Voltage (Volts)
g
fs
-Forward Transconductance (mS)
0
0.2
0.4
0.6
0.8
1.0
I
DS
- Drain Source Current
Typical Diode Forward Voltage
Typical Transconductance vs.
Drain Current
Typical Transconductance vs.
Gate - Source Voltage
100
R
DS(on)
AT
V
GS
=5V
I
D
=200mA
C
oss
1.8
NOTE:-V
GS
=0V
C
iss
F=1MHz
1.6
C
rss
C
iss
1.4
10
V
GS(th)
AT
I
D
=1mA
V
DS
=V
GS
C
oss
1.2
1.0
C-Capacitance (pF)
C
rss
0.8
1
-40
0
40
80
0
Normalised R
DS(on)
And V
GS(th)
0.6
120
160
0.1
1
10
100
V
DS
-Drain Source Voltage (Volts)
T-Temperature ( °C)
Typical Capacitance vs.
Drain - Source Voltage
Normalised R
DS(on)
And V
GS(th)
vs. Temperature
3 - 73
3 - 74
BSS138
TYPICAL CHARACTERISTICS
V
GS
=2.5V 3V 3.5V
BSS138
14
1.0
0.8
V
DS
=10V
80µs Pulsed Test
TYPICAL CHARACTERISTICS
4V
1.0
100
V
GS
=10V
5V
4.5V
4V
12
10
V
DD
0.8
I
D
=200mA
0V
=2
3.5V
0.6
8
6
0.4
0.2
0
0
1
4
2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
V
30
V
50
0.6
3V
10
0.4
5V
7V
10V
0.2
2.5V
I
DS
-Drain Source Current (A)
80µs Pulsed Test
R
DS(on) -
Drain Source
On Resistance (Ohms)
2V
0
1
2
3
4
5
0.01
0.1
1.0
V
GS
-Gate-Source Voltage (Volts)
V
DS
-Drain Source Voltage (Volts)
I
D
-Drain Current (Amperes)
Q-Charge (nC)
I
DS
- Drain Source Current (A)
0
1.0
2
3
4
5
V
GS
- Gate Source Voltage (V)
Saturation Characteristics
Typical On Resistance vs.
Drain Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
100µA
1mA
Typical Gate Charge vs.
Gate-Source Voltage
Typical Transfer Characteristics
500
500
80µs Pulsed Test
V
GS
=0
400
400
300
V
DS
=25V
80µs Pulsed Test
300
V
DS
=25V
80µs Pulsed Test
200
200
V
SD
- Source Drain Voltage (V)
100
100
0
0
2
4
6
8
10
0
10mA
100mA
1A
g
fs
-Forward Transconductance (mS)
I
D
-Drain Current (Amperes)
V
GS
-Gate Source Voltage (Volts)
g
fs
-Forward Transconductance (mS)
0
0.2
0.4
0.6
0.8
1.0
I
DS
- Drain Source Current
Typical Diode Forward Voltage
Typical Transconductance vs.
Drain Current
Typical Transconductance vs.
Gate - Source Voltage
100
R
DS(on)
AT
V
GS
=5V
I
D
=200mA
C
oss
1.8
NOTE:-V
GS
=0V
C
iss
F=1MHz
1.6
C
rss
C
iss
1.4
10
V
GS(th)
AT
I
D
=1mA
V
DS
=V
GS
C
oss
1.2
1.0
C-Capacitance (pF)
C
rss
0.8
1
-40
0
40
80
0
Normalised R
DS(on)
And V
GS(th)
0.6
120
160
0.1
1
10
100
V
DS
-Drain Source Voltage (Volts)
T-Temperature ( °C)
Typical Capacitance vs.
Drain - Source Voltage
Normalised R
DS(on)
And V
GS(th)
vs. Temperature
3 - 73
3 - 74
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