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SMAU1D

Description
1 A, 200 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size379KB,2 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

SMAU1D Overview

1 A, 200 V, SILICON, SIGNAL DIODE

SMAU1D Parametric

Parameter NameAttribute value
MakerKEC
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW POWER LOSS
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-C2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING TYPE POWER SUPPLY APPLICATIONS.
FEATURES
Ultra-Fast Recovery Time for High Efficiency.
Low Profile Surface Mount Package.
Low Forward Voltage Drop, High current Capability, and
Low Power Loss.
2
SMAU1D
ULTRA FAST RECOVERY RECTIFIER DIODE
H
A
D
APPLICATION
Switching Power Supply.
DC/DC Converter.
Home Appliances, Office Equipment.
Telecommunication, Factory Automation.
1
C
B
G
1. ANODE
DIM
A
B
C
D
E
F
G
H
MILLIMETERS
_
4.5 + 0.2
_
2.6 + 0.2
_
1.5 + 0.2
_
5.0 + 0.3
_
1.2 + 0.3
_
2.0 + 0.2
0 ~ 0.15
R 0.5
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
V
RRM
I
O
I
FSM
T
j
T
stg
RATING
200
1
33
-40 150
-40 150
UNIT
V
A
A
2. CATHODE
Maximum Repetitive Peak Reverse Voltage
Average Output Rectitifed Current
Peak One Cycle Surge Forward Current
(Non-Repetitive 60Hz)
Junction Temperature
Storage Temperature Range
Marking
F
SMA
Type Name
U1D
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse Current
Reverse Recovery Time
Thermal Resistance
SYMBOL
V
FM
I
RRM
t
rr
R
th(j-1)
R
th(j-a)
TEST CONDITION
I
FM
=1.0A
V
RRM
=Rated
I
F
=100mA, I
R
=200mA
Junction to lead
Junction to ambient
(on alumina substrate)
MIN.
-
-
-
-
-
TYP.
-
-
-
-
-
MAX.
0.98
10
50
23
108
UNIT
V
A
ns
/W
/W
2002. 3. 7
Revision No : 3
E
E
1/2
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