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BST16

Description
SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size11KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric View All

BST16 Overview

SMALL SIGNAL TRANSISTOR

BST16 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz
SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
BST16
C
ISSUE 3 – FEBRUARY 1996
FEATURES
* High V
CEO
* Low saturation voltage
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
BT2
B
SOT89
7
BST39
E
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
V
CBO
SYMBOL
VALUE
-350
-300
-4
-1
-500
1
-65 to +150
UNIT
V
V
V
A
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
V
CE(sat)
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
Output Capacitance
f
T
C
obo
30
15
15
MIN.
-350
-300
-4
-1
-50
-20
- 2.0
-0.5
150
MHz
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
For typical characteristics graphs see FMMTA92 datasheet.
TYP.
MAX.
UNIT
V
V
V
µA
µA
µA
V
V
CONDITIONS.
I
C
=-100µA
I
C
=-1mA
I
E
=-100µA
V
CB
=-280V
V
CB
=-250V
V
EB
=-4V
I
C
=-50mA, I
B
=-5mA*
I
C
=-30mA, I
B
=-3mA*
I
C
=-50mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
f = 30MHz
V
CB
=-10V, f=1MHz
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