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SMAJ6.5

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size157KB,4 Pages
ManufacturerDAESAN
Websitehttp://www.diodelink.com
Download Datasheet View All

SMAJ6.5 Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE

SMAJ5.0 THRU SMAJ188CA
Features
· Plastic package has Underwriters Laboratory
flammability classification 94V-0
· Optimized for LAN protection applications
· Ideal for ESD protection of data lines in accordance with
IEC 1000-4-2 (IEC801-2)
· Ideal for EFT protection of data lines in accordance with
IEC 1000-4-4 (IEC801-4)
· Low profile package with built-in strain relief for surface
mounted applications
· Glass passivated junction
· Low incremental surge resistance, excellent clamping
capability
· 400W peak pulse power capability with a 10/1000μS
waveform, repetition rate(duty cycle) : 0.01% (300W above 78V)
· Very fast response time
· High temperature soldering guaranteed : 250
/10 seconds
at terminals
POWER 400Watts
VOLTAGE 5.0 to 188 Volts
DO-214AC (SMA)
0.058(1.47)
0.052(1.32)
0.110(2.79)
0.100(2.54)
0.177(4.50)
0.157(3.99)
0.012(0.31)
0.006(0.15)
0.090(2.29)
0.078(1.98)
0.060(1.52)
0.030(0.76)
0.005(0.127)
MAX.
0.208(5.28)
0.194(4.93)
Mechanical Data
· Case : JEDEC DO-214AC(SMA) molded plastic
over passivated chip
· Terminals : Solder plated , solderable per
MIL-STD-750, method 2026
· Polarity : For uni-directional types the band denotes
the cathode, which is positive with respect to the
anode under normal TVS operation
· Mounting Position : Any
· Weight : 0.002 ounce, 0.064 gram
Dimensions in inches and (millimeters)
Devices For Bidirectional Applications
· For bi-directional devices, use suffix C or CA (e.g. SMAJ10C, SMAJ10CA).
Electrical characteristics apply in both directions.
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified)
Symbols
Peak pulse power dissipation with a 10/1000μS waveform (Note 1,2. Fig. 1)
Peak pulse current with a waveform (Note 1)
Peak forward surge current, 8.3mm single half sine-wave unidirectional only (Note 2)
Typical thermal resistance, junction to ambient (Note 3)
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
P
PPM
I
PPM
I
FSM
Values
400
See next table
40
120
30
-55 to +150
Units
Watts
Amps
Amps
℃/W
℃/W
JA
JL
T
J
,T
STG
Notes:
(1) Non repetitive current pulse, per Fig.3 and derated above T
A
=25℃ per Fig.2 Rating is 300W above 78V
(2) Mounted on 0.2×0.2"(5.0×5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Samsung NAND naming rules
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