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GT6139

Description
1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-432, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size424KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

GT6139 Overview

1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-432, 2 PIN

GT6139 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1167269013
package instructionGLASS, CB-432, 2 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum breakdown voltage8.25 V
Minimum breakdown voltage6.75 V
Breakdown voltage nominal value7.5 V
Shell connectionISOLATED
Maximum clamping voltage11.8 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeE-LALF-W2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
Maximum repetitive peak reverse voltage5.7 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
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