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BT134-500D

Description
600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC
CategoryAnalog mixed-signal IC    Trigger device   
File Size35KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BT134-500D Overview

600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC

BT134-500D Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Critical rise rate of minimum off-state voltage5 V/us
Maximum DC gate trigger current5 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current10 mA
JESD-609 codee0
Maximum leakage current0.5 mA
Maximum on-state voltage1.7 V
Maximum operating temperature120 °C
Maximum rms on-state current4 A
Off-state repetitive peak voltage500 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeTRIAC
Philips Semiconductors
Product specification
Triacs
logic level
GENERAL DESCRIPTION
Glass passivated, sensitive gate
triacs in a plastic envelope, intended
for use in general purpose
bidirectional switching and phase
control applications. These devices
are intended to be interfaced directly
to microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
BT134 series D
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
BT134-
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
MAX. MAX. UNIT
500D
500
4
25
600D
600
4
25
V
A
A
PINNING - SOT82
PIN
1
2
3
tab
DESCRIPTION
main terminal 1
PIN CONFIGURATION
SYMBOL
T2
main terminal 2
gate
main terminal 2
1
2
3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
mb
107 ˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 6 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
500
1
4
25
27
3.1
50
50
50
10
2
5
5
0.5
150
125
MAX.
-600
600
1
UNIT
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
October 1997
1
Rev 1.200

BT134-500D Related Products

BT134-500D BT134-600D BT134
Description 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC Triacs logic level
Is it Rohs certified? incompatible incompatible -
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) -
Reach Compliance Code unknow unknow -
Critical rise rate of minimum off-state voltage 5 V/us 5 V/us -
Maximum DC gate trigger current 5 mA 5 mA -
Maximum DC gate trigger voltage 1.5 V 1.5 V -
Maximum holding current 10 mA 10 mA -
JESD-609 code e0 e0 -
Maximum leakage current 0.5 mA 0.5 mA -
Maximum on-state voltage 1.7 V 1.7 V -
Maximum operating temperature 120 °C 120 °C -
Maximum rms on-state current 4 A 4 A -
Off-state repetitive peak voltage 500 V 600 V -
surface mount NO NO -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Trigger device type TRIAC TRIAC -
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