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BT134W-500E

Description
Triacs sensitive gate
CategoryAnalog mixed-signal IC    Trigger device   
File Size42KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BT134W-500E Overview

Triacs sensitive gate

BT134W-500E Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Critical rise rate of minimum off-state voltage30 V/us
Maximum DC gate trigger current10 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current15 mA
JESD-609 codee0
Maximum leakage current0.5 mA
Maximum on-state voltage1.7 V
Maximum operating temperature120 °C
Maximum rms on-state current1 A
Off-state repetitive peak voltage500 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeTRIAC
Philips Semiconductors
Product specification
Triacs
sensitive gate
GENERAL DESCRIPTION
Glass passivated, sensitive gate triacs
in a plastic envelope suitable for
surface mounting, intended for use in
general
purpose
bidirectional
switching
and
phase
control
applications, where high sensitivity is
required in all four quadrants.
BT134W series E
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
BT134W-
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
MAX. MAX. UNIT
500E
500
1
10
600E
600
1
10
V
A
A
PINNING - SOT223
PIN
1
2
3
tab
DESCRIPTION
main terminal 1
PIN CONFIGURATION
4
SYMBOL
T2
main terminal 2
gate
main terminal 2
1
2
3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
sp
108 ˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 1.5 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
500
1
1
10
11
0.5
50
50
50
10
2
5
5
0.5
150
125
MAX.
-600
600
1
UNIT
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
August 1997
1
Rev 1.200

BT134W-500E Related Products

BT134W-500E BT134W BT134W-600E
Description Triacs sensitive gate Triacs sensitive gate 600 V, 1 A, TRIAC
Is it Rohs certified? incompatible - conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) - Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow - unknow
Critical rise rate of minimum off-state voltage 30 V/us - 30 V/us
Maximum DC gate trigger current 10 mA - 5 mA
Maximum DC gate trigger voltage 1.5 V - 1.5 V
Maximum holding current 15 mA - 10 mA
JESD-609 code e0 - e3
Maximum leakage current 0.5 mA - 0.5 mA
Maximum on-state voltage 1.7 V - 1.7 V
Maximum operating temperature 120 °C - 120 °C
Maximum rms on-state current 1 A - 1 A
Off-state repetitive peak voltage 500 V - 600 V
surface mount YES - YES
Terminal surface Tin/Lead (Sn/Pb) - Matte Tin (Sn)
Trigger device type TRIAC - TRIAC
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