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BT136-800E

Description
600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
CategoryAnalog mixed-signal IC    Trigger device   
File Size35KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BT136-800E Overview

600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB

BT136-800E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Critical rise rate of minimum off-state voltage50 V/us
Maximum DC gate trigger current10 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current15 mA
JESD-609 codee3
Maximum leakage current0.5 mA
Maximum on-state voltage1.7 V
Maximum operating temperature120 °C
Maximum rms on-state current4 A
Off-state repetitive peak voltage800 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Trigger device typeTRIAC
Philips Semiconductors
Product specification
Triacs
sensitive gate
GENERAL DESCRIPTION
Passivated, sensitive gate triacs in a
plastic envelope, intended for use in
general
purpose
bidirectional
switching
and
phase
control
applications, where high sensitivity is
required in all four quadrants.
BT136 series E
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
BT136-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600E
600
4
25
MAX.
800E
800
4
25
UNIT
V
A
A
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
main terminal 1
PIN CONFIGURATION
tab
SYMBOL
T2
main terminal 2
gate
main terminal 2
1 23
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
mb
107 ˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 6 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-600
600
1
4
25
27
3.1
50
50
50
10
2
5
5
0.5
150
125
MAX.
-800
800
UNIT
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
June 2001
1
Rev 1.400

BT136-800E Related Products

BT136-800E BT136-500E BT136-600E
Description 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
Is it Rohs certified? conform to incompatible conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow unknow
Critical rise rate of minimum off-state voltage 50 V/us 50 V/us 50 V/us
Maximum DC gate trigger current 10 mA 10 mA 10 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V 1.5 V
Maximum holding current 15 mA 15 mA 15 mA
JESD-609 code e3 e0 e3
Maximum leakage current 0.5 mA 0.5 mA 0.5 mA
Maximum on-state voltage 1.7 V 1.7 V 1.7 V
Maximum operating temperature 120 °C 120 °C 120 °C
Maximum rms on-state current 4 A 4 A 4 A
Off-state repetitive peak voltage 800 V 500 V 600 V
surface mount NO NO NO
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn)
Trigger device type TRIAC TRIAC TRIAC
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