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BT137M-500E

Description
Octal Buffers and Line Drivers with 3-State Outputs 20-CDIP -55 to 125
Categorysemiconductor    Discrete semiconductor   
File Size39KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BT137M-500E Overview

Octal Buffers and Line Drivers with 3-State Outputs 20-CDIP -55 to 125

Philips Semiconductors
Product specification
Triacs
sensitive gate
GENERAL DESCRIPTION
Glass passivated, sensitive gate
triacs in a plastic envelope, suitable
for surface mounting, intended for use
in general purpose bidirectional
switching
and
phase
control
applications, where high sensitivity is
required in all four quadrants.
BT137S series E
BT137M series E
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
BT137S
(or BT137M)-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500E
500
8
65
600E
600
8
65
800E
800
8
65
V
A
A
PINNING - SOT428
PIN
Standard Alternative
NUMBER
S
M
1
2
3
tab
MT1
MT2
gate
MT2
gate
MT2
MT1
MT2
PIN CONFIGURATION
tab
SYMBOL
T2
T1
2
1
3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
mb
102 ˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
500
1
MAX.
-600
600
1
8
65
71
21
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
October 1997
1
Rev 1.200

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