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BT137X-800F

Description
DIODE ZENER SINGLE 150mW 8.2Vz 5mA-Izt 0.061 0.7uA-Ir 5 SOT-523 3K/REEL
CategoryAnalog mixed-signal IC    Trigger device   
File Size42KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BT137X-800F Overview

DIODE ZENER SINGLE 150mW 8.2Vz 5mA-Izt 0.061 0.7uA-Ir 5 SOT-523 3K/REEL

BT137X-800F Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Critical rise rate of minimum off-state voltage50 V/us
Maximum DC gate trigger current70 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current20 mA
JESD-609 codee0
Maximum leakage current0.5 mA
Maximum on-state voltage1.65 V
Maximum operating temperature125 °C
Maximum rms on-state current8 A
Off-state repetitive peak voltage800 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeTRIAC
Philips Semiconductors
Product specification
Triacs
BT137X series
GENERAL DESCRIPTION
Glass passivated triacs in a full pack
plastic envelope, intended for use in
applications
requiring
high
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BT137X-
BT137X-
BT137X-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500
500F
500G
500
8
65
600
600F
600G
600
8
65
800
800F
800G
800
8
65
V
DRM
I
T(RMS)
I
TSM
V
A
A
PINNING - SOT186A
PIN
1
2
3
DESCRIPTION
main terminal 1
PIN CONFIGURATION
case
SYMBOL
T2
main terminal 2
gate
1 2 3
T1
case isolated
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
hs
73 ˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
500
1
MAX.
-600
600
1
8
65
71
21
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
September 1997
1
Rev 1.200

BT137X-800F Related Products

BT137X-800F BT137X-500G BT137X-600F BT137X-500F BT137X-600 BT137X-600G BT137X-800 BT137X-800G
Description DIODE ZENER SINGLE 150mW 8.2Vz 5mA-Izt 0.061 0.7uA-Ir 5 SOT-523 3K/REEL DIODE ZENER SINGLE 150mW 7.5Vz 5mA-Izt 0.0604 1uA-Ir 5 SOT-523 3K/REEL 600 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC Triacs 600 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC Thyristor Product Catalog Octal Buffers and Line Drivers with 3-State Outputs 20-LCCC -55 to 125 DIODE ZENER TRIPLE ISOLATED 200mW 8.2Vz 5mA-Izt 0.061 0.7uA-Ir 5 SOT-363 3K/REEL
Is it Rohs certified? incompatible incompatible conform to incompatible conform to conform to conform to incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow
Critical rise rate of minimum off-state voltage 50 V/us 200 V/us 50 V/us 50 V/us 100 V/us 200 V/us 100 V/us 200 V/us
Maximum DC gate trigger current 70 mA 100 mA 70 mA 70 mA 70 mA 100 mA 70 mA 100 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
Maximum holding current 20 mA 40 mA 20 mA 20 mA 20 mA 40 mA 20 mA 40 mA
JESD-609 code e0 e0 e3 e0 e3 e3 e3 e0
Maximum leakage current 0.5 mA 0.5 mA 0.5 mA 0.5 mA 0.5 mA 0.5 mA 0.5 mA 0.5 mA
Maximum on-state voltage 1.65 V 1.65 V 1.65 V 1.65 V 1.65 V 1.65 V 1.65 V 1.65 V
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Maximum rms on-state current 8 A 8 A 8 A 8 A 8 A 8 A 8 A 8 A
Off-state repetitive peak voltage 800 V 500 V 600 V 500 V 600 V 600 V 800 V 800 V
surface mount NO NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Tin/Lead (Sn/Pb)
Trigger device type TRIAC TRIAC TRIAC TRIAC TRIAC TRIAC TRIAC TRIAC
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