®
BTA/BTB10 Series
10A TRIAC
S
SNUBBERLESS™ & STANDARD
MAIN FEATURES:
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT (Q
1
)
Value
10
600 and 800
25 to 50
Unit
A
V
mA
G
A2
A1
A2
DESCRIPTION
Available either in standard or snubberless
version, the BTA/BTB10 triac series is suitable for
general purpose AC switching. They can be used
as an ON/OFF function in applications such as
static relays, heating regulation, induction motor
starting circuits... or for phase control operation in
light dimmers, motor speed controllers, ...
The snubberless version (W suffix) is specially
recommended for use on inductive loads, thanks
to their high commutation performances.
By using an internal ceramic pad, the BTA series
provides voltage insulated tab (rated at 2500 V
RMS) complying with UL standards (File ref.:
E81734).
ABSOLUTE MAXIMUM RATINGS
Symbol
I
T(RMS)
RMS on-state current
(full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
Parameter
A1
A2
G
A1
A2
G
TO-220AB Insulated
(BTA10)
TO-220AB
(BTB10)
Value
TO-220AB
Tc = 105°C
10
Tc = 95°C
t = 16.7 ms
t = 20 ms
105
100
55
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
50
V
DRM
/V
RRM
+ 100
Unit
A
TO-220AB Ins.
F = 60 Hz
F = 50 Hz
tp = 10 ms
F = 120 Hz
tp = 10 ms
tp = 20 µs
I
TSM
A
I
²
t
dI/dt
A
²
s
A/µs
V
A
W
°C
1/6
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
I
GM
P
G(AV)
T
stg
T
j
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
4
1
- 40 to + 150
- 40 to + 125
April 2002 - Ed: 5A
BTA/BTB10 Series
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
s
SNUBBERLESS™ (3 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB10
CW
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
(dI/dt)c (2)
V
D
= 12 V
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
gate open Tj = 125°C
Without snubber
Tj = 125°C
I - III
II
MIN.
MIN.
R
L
= 33
Ω
R
L
= 3.3 kΩ
Tj = 125°C
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
MAX.
35
50
60
500
5.5
35
1.3
0.2
50
70
80
1000
9.0
V/µs
A/ms
BW
50
mA
V
V
mA
mA
Unit
s
STANDARD (4 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB10
C
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 %V
DRM
gate open Tj = 125°C
Tj = 125°C
I - III - IV
II
MIN.
MIN.
(dV/dt)c (2) (dI/dt)c = 4.4 A/ms
R
L
= 3.3 kΩ
Tj = 125°C
V
D
= 12 V
R
L
= 33
Ω
I - II - III
IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
MAX.
25
40
80
200
5
25
50
1.3
0.2
50
50
100
400
10
V/µs
V/µs
B
50
100
mA
V
V
mA
mA
Unit
STATIC CHARACTERISTICS
Symbol
V
TM
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Test Conditions
I
TM
= 14 A
tp = 380 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
40
5
1
Unit
V
V
mΩ
µA
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
2/6
BTA/BTB10 Series
THERMAL RESISTANCES
Symbol
R
th(j-c)
R
th(j-a)
Junction to case (AC)
Junction to ambient
Parameter
TO-220AB
TO-220AB Insulated
TO-220AB
TO-220AB Insulated
Value
1.5
2.4
60
°C/W
Unit
°C/W
PRODUCT SELECTOR
Voltage (xxx)
Part Number
600 V
BTA/BTB10-xxxB
BTA/BTB10-xxxBW
BTA/BTB10-xxxC
BTA/BTB10-xxxCW
BTB: Non insulated TO-220AB package
Sensitivity
800 V
X
X
X
X
50 mA
50 mA
25 mA
35 mA
X
X
X
X
Type
Standard
Snubberless
Standard
Snubberless
Package
TO-220AB
TO-220AB
TO-220AB
TO-220AB
ORDERING INFORMATION
BT A 10 -
TRIAC
SERIES
INSULATION:
A: insulated
B: non insulated
CURRENT: 10A
600
BW
(RG)
PACKING MODE
Blank: Bulk
RG: Tube
VOLTAGE:
600: 600V
800: 800V
SENSITIVITY & TYPE
B: 50mA STANDARD
BW: 50mA SNUBBERLESS
C: 25mA STANDARD
CW: 35mA SNUBBERLESS
OTHER INFORMATION
Part Number
BTA/BTB10-xxxyz
BTA/BTB10-xxxyzRG
Marking
BTA/BTB10xxxyz
BTA/BTB10-xxxyz
Weight
2.3 g
2.3 g
Base
quantity
250
50
Packing
mode
Bulk
Tube
Note:
xxx = voltage, y = sensitivity, z = type
3/6
BTA/BTB10 Series
Fig. 1:
Maximum power dissipation versus RMS
on-state current (full cycle).
P (W)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Fig. 2:
RMS on-state current versus case
temperature (full cycle).
IT(RMS) (A)
12
11
10
9
8
7
6
5
4
3
2
1
0
BTB
BTA
IT(RMS) (A)
0
1
2
3
4
5
6
7
8
9
10
Tc(°C)
0
25
50
75
100
125
Fig. 3:
Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
1E+0
Zth(j-c)
Fig. 4:
values).
ITM (A)
100
On-state
characteristics
(maximum
Tj max.
Vto = 0.85 V
Rd = 40 mW
Tj max
1E-1
Zth(j-a)
10
Tj=25°C
tp (s)
1E-2
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
VTM (V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Fig. 5:
Surge peak on-state current versus
number of cycles.
Fig. 6:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
1000
Tj initial=25°C
ITSM (A)
110
100
90
80
70
60
50
40
30
20
10
0
t=20ms
Non repetitive
Tj initial=25°C
One cycle
dI/dt limitation:
50A/µs
ITSM
100
I²t
Repetitive
Tc=95°C
Number of cycles
1
10
100
1000
10
0.01
0.10
tp (ms)
1.00
10.00
4/6
BTA/BTB10 Series
Fig. 7:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
IGT
Fig. 8:
Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
B
C
1.5
IH & IL
1.2
1.0
0.8
0.6
BW/CW
1.0
0.5
Tj(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
(dV/dt)c (V/µs)
1.0
10.0
100.0
0.4
0.1
Fig. 9:
Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
0
0
25
50
Tj (°C)
75
100
125
5/6
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