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YG812S04R
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Repetitive peak surge reverse voltage
Repetitive peak reverse voltage
Isolating voltage
Average forward current
Non-repetitive forward surge current
Operating junction temperature
Storage temperature
Symbols
V
RSM
V
RRM
V
iso
I
FAV
I
FSM
Tj
Tstg
Conditions
tw=500ns, duty=1/40
-
Terminals-to-case, AC.1min
50Hz Square wave duty =1/2
Tc = 124˚C
Sine wave, 10ms 1shot
-
-
Ratings
48
45
1500
10
120
150
-40 to +150
FUJI Diode
Units
V
V
V
A
A
˚C
˚C
Electrical characteristics
Item
Forward voltage
Reverse current
Thermal resistance
(at Ta=25˚C unless otherwise specified.)
Symbols
V
F
I
R
Rth(j-c)
I
F
=10 A
V
R
=V
RRM
Junction to case
Conditions
Maximum
0.6
2.0
2.5
Units
V
mA
˚C/W
Mechanical characteristics
Item
Mounting torque
Approximate mass
Conditions
Recommended torque
-
Maximum
0.3 to 0.5
1.7
Units
N•m
g
1
YG812S04R
Outline Drawings [mm]
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FUJI Diode
YG812S04
YG812S04
2
YG812S04R
Forward Characteristic (typ.)
100
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Reverse Characteristic (typ.)
FUJI Diode
10
2
Tj=150°C
Tj=125°C
10
10
1
Tj=100°C
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
(mA)
Reverse Current
10
0
Forward Current (A)
10
-1
1
IF
IR
Tj=25°C
10
-2
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
10
-3
0
10
20
30
40
50
VF Forward Voltage (V)
Forward Power Dissipation (max.)
14
VR Reverse Voltage (V)
Reverse Power Dissipation (max.)
360°
12
10
360°
DC
I
0
λ
VR
α
(W)
8
Square wave
λ
=60°
Square wave
λ
=120°
Sine wave
λ
=180°
Reverse Power Dissipation
Forward Power Dissipation
(W)
10
8
6
α
=180°
6
Square wave
λ
=180°
DC
4
WF
PR
2
4
2
Per 1element
0
0
2
4
6
8
10
0
0
5
10
15
20
25
30
35
40
45
IO
Average Forward Current
(A)
VR
Reverse Voltage
(V)
3
YG812S04R
Current Derating (Io-Tc) (max.)
160
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Junction Capacitance Characteristic (typ.)
10000
FUJI Diode
150
140
DC
(°C)
130
Case Temperature
Sine wave
120
λ
=180°
Square wave
λ
=180°
Square wave
λ
=120°
Junction Capacitance (pF)
CJ
1000
110
TC
Square wave
λ
=60°
100
360°
90
I
0
λ
VR=22.5V
V
80
0
2
4
6
8
10
12
14
16
100
1
10
100
IO
Average Output Current
(A)
ă:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
VR
Reverse Voltage (V)
Surge Capability (max.)
1000
Peak Half - Wave Current
IFSM
(A)
100
10
1
10
100
Number of Cycles at 50Hz
4
YG812S04R
Transient Thermal Impedance (max.)
10
2
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FUJI Diode
(°C/W)
Transient Thermal Impedance
10
1
Rth(j-c):2.5°C/W
10
0
10
-1
10
-3
10
-2
10
-1
10
0
10
1
10
2
T
Time
(s)
5
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